Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Abstract: A dehydrogenation method for hydrogen storage materials, which is executed by a fuel cell system. The fuel cell system includes a hydrogen storage material tank, a heating unit, a fuel cell, a pump, a water thermal management unit and a heat recovery unit. The described dehydrogenation method utilizes the heating unit and the heat recovery unit to provide thermal energy to the hydrogen storage material tank, so that hydrogen storage material is heated to the dehydrogenation temperature. The pump extracts hydrogen from the hydrogen storage material tank, so that the hydrogen storage material is under negative pressure (i.e. H2 absolute pressure below 1 atm), according to which the hydrogen storage material is dehydrogenated, and the dehydrogenation efficiency and the amount of hydrogen release are improved. The method n can reduce the dehydrogenation temperature of the hydrogen storage material, and reduce the thermal energy consumption for heating the hydrogen storage material.

Abstract: A dehydrogenation method for hydrogen storage materials, which is executed by a fuel cell system. The fuel cell system includes a hydrogen storage material tank, a heating unit, a fuel cell, a pump, a water thermal management unit and a heat recovery unit. The described dehydrogenation method utilizes the heating unit and the heat recovery unit to provide thermal energy to the hydrogen storage material tank, so that hydrogen storage material is heated to the dehydrogenation temperature. The pump extracts hydrogen from the hydrogen storage material tank, so that the hydrogen storage material is under negative pressure (i.e. H2 absolute pressure below 1 atm), according to which the hydrogen storage material is dehydrogenated, and the dehydrogenation efficiency and the amount of hydrogen release are improved. The method n can reduce the dehydrogenation temperature of the hydrogen storage material, and reduce the thermal energy consumption for heating the hydrogen storage material.

Abstract: A speech synthesis system includes an operating interface, a storage unit and a processor. The operating interface provides a plurality of language options for a user to select one output language option therefrom. The storage unit stores a plurality of acoustic models. Each acoustic model corresponds to one of the language options and includes a plurality of phoneme labels corresponding to a specific vocal. The processor receives a text file and generates output speech data corresponding to the specific vocal according to the text file, a speech synthesizer, and one of the acoustic models which corresponds to the output language option.

Abstract: An audio playback device receives an instruction from a user to select a target voice model from a plurality of voice models and assigns the target voice model to a target character in a text. The audio playback device also transforms the text into a speech, and during the process of transforming the text into the speech, transforms sentences of the target character in the text into the speech of the target character according to the target voice model.

Abstract: A speech synthesis system includes an operating interface, a storage unit and a processor. The operating interface provides a plurality of language options for a user to select one output language option therefrom. The storage unit stores a plurality of acoustic models. Each acoustic model corresponds to one of the language options and includes a plurality of phoneme labels corresponding to a specific vocal. The processor receives a text file and generates output speech data corresponding to the specific vocal according to the text file, a speech synthesizer, and one of the acoustic models which corresponds to the output language option.

Abstract: An audio playback device receives an instruction from a user to select a target voice model from a plurality of voice models and assigns the target voice model to a target character in a text. The audio playback device also transforms the text into a speech, and during the process of transforming the text into the speech, transforms sentences of the target character in the text into the speech of the target character according to the target voice model.

Abstract: A method for forming a bottom polysilicon electrode of a stacked capacitor for DRAMs makes use of a double-layered polysilicon structure and a phosphoric acid etching. When the double-layered polysilicon structure is etched with the phosphoric acid, the polysilicon grain boundary is etched at a rate faster than the polysilicon grain itself so as to enable the formation of a rugged surface and thus increases the total surface area.

Abstract: A porous silicon layer is created by using wet etching to etch a polysilicon layer. In preferred embodiment, the polysilicon layer is treated by H.sub.3 PO.sub.4 solution at 60-165.degree. C. for about 3-200 minutes. The porous silicon layer is subsequently treated by using a SC-1 solution at a temperature about 50-100.degree. C. for about 5-30 minutes to form a roughened polysilicon layer. The SC-1 solution is composed of NH.sub.4 OH, H.sub.2 O.sub.2 and H.sub.2 O. The volume ratio for the three compounds of said SC-1 is NH.sub.4 OH:H.sub.2 O.sub.2 :H.sub.2 O=0.1-5:0.1-5:1-20. The next step of the formation is the deposition of a dielectric film along the roughened surface of the micro-islands polysilicon layers. A conductive layer is deposited over the dielectric film. Next, photolithgraphy and etching process are used to etch the conductive layer, the dielectric film and the micro-islands polysilicon layer into a portion of the layer.

Abstract: A method of fabricating a super thin O/N/O stacked dielectric by oxidizing a thin nitride layer in low pressure oxygen for high-density DRAMs is disclosed. A thin nitride layer with a thickness of approximately 20 .ANG. to 60 .ANG. is formed over the surface of a silicon substrate. The nitride layer is oxidized in pure oxygen ambient of 0.01 Torr to 76 Torr at a temperature from 750.degree. C. to 950.degree. C. for approximately 10 to 60 minutes. A super thin oxide/nitride/oxide (O/N/O) stacked dielectric exhibiting a low leakage current and high reliability for use in high-density DRAMs is formed by the aforementioned low-pressure dry-oxidation procedure.