Abstract: The present invention provides a method for calculating the liquid-solid interface morphology during growth of the ingot. The method comprises providing a wafer, selecting plural sampling locations on the wafer and detecting electrical resistivity at the plural sampling locations, calculating height differences between the sampling locations based on the detected electrical resistivity, and illustrating the morphology of the liquid-solid interface based on the calculated height differences. The method of the invention has advantages including easy operation and low cost.

Abstract: The present invention provides a method and an apparatus of monocrystal growth. The method comprises providing an apparatus comprising a crucible, a first lifting device for lifting the crucible, a deflector tube and a second lifting device for lifting the deflector tube; setting a theoretical distance between the deflector tube and the melt surface, determining a theoretical ratio of the crucible lifting rate relative to the monocrystal lifting rate based on sizes of the crucible and the monocrystal, and starting to grow the monocrystal. During the growth, the position of one or more of the crucible, the deflector tube and the monocrystal is adjusted, the actual distance between the deflector tube and the melt surface is real-time detected, the deviation value between the theoretical and the actual distances is calculated, a variation of the ratio is obtained by the deviation value, and the theoretical ratio is adjusted based on the variation.

Abstract: The invention provides a semiconductor crystal growth device comprising a furnace body; a crucible; a pulling device; a horizontal magnetic field applying device; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field. According to the semiconductor crystal growth device of the present invention, the temperature distribution inside the melt silicon and quality of the semiconductor crystal are improved.

Abstract: A semiconductor crystal growth method and device are provided. The method comprises: obtaining an initial position of a graphite crucible when used in a semiconductor crystal growth process for the first time; obtaining a current production batch of the graphite crucible which characterizes a number of times of growth processes performed by the graphite crucible so far; and loading polysilicon raw materials into a quartz crucible sleeved in the graphite crucible based on the current production batch, wherein a total weight of the materials is called a charging amount, and the charging amount is adjusted based on the current production batch to keep an initial position of a silicon melt liquid surface in the quartz crucible stable while keeping the initial position of the graphite crucible unchanged. The present invention ensures the stability of each parameter in the crystal pulling process, and enhances the crystal pulling speed and quality.

Abstract: The present invention provides a method for calculating the liquid-solid interface morphology during growth of the ingot. The method comprises providing a wafer, selecting plural sampling locations on the wafer and detecting electrical resistivity at the plural sampling locations, calculating height differences between the sampling locations based on the detected electrical resistivity, and illustrating the morphology of the liquid-solid interface based on the calculated height differences. The method of the invention has advantages including easy operation and low cost.

Abstract: The present invention provides a method and an apparatus of monocrystal growth. The method comprises providing an apparatus comprising a crucible, a first lifting device for lifting the crucible, a deflector tube and a second lifting device for lifting the deflector tube; setting a theoretical distance between the deflector tube and the melt surface, determining a theoretical ratio of the crucible lifting rate relative to the monocrystal lifting rate based on sizes of the crucible and the monocrystal, and starting to grow the monocrystal. During the growth, the position of one or more of the crucible, the deflector tube and the monocrystal is adjusted, the actual distance between the deflector tube and the melt surface is real-time detected, the deviation value between the theoretical and the actual distances is calculated, a variation of the ratio is obtained by the deviation value, and the theoretical ratio is adjusted based on the variation.

Abstract: The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible, arranged inside the furnace body to receive the silicon melt; a pulling device arranged on the top of the furnace body, and is used to pulling out the silicon crystal ingot from the silicon melt body; a reflector, being barrel-shaped and disposed above the silicon melt in the furnace in a vertical direction, and the pulling device pulls the silicon crystal ingot passing through the reflector in a vertical direction; and a magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; wherein grooves are provided at the bottom of the inner wall of the reflector, so that the distance between the bottom of the reflector and the silicon crystal ingot in the direction of the magnetic field is greater than that in the direction perpendicular to the magnetic field.

Abstract: The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible, arranged inside the furnace body to receive the silicon melt; a pulling device arranged on the top of the furnace body, and is used to pulling out the silicon crystal ingot from the silicon melt body; a reflector, being barrel-shaped and disposed above the silicon melt in the furnace in a vertical direction, and the pulling device pulls the silicon crystal ingot passing through the reflector in a vertical direction; and a magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; wherein the bottom of the reflector is provided with downwardly convex steps, so that a distance between the bottom of the reflector and the silicon melt surface in the direction of the magnetic field is smaller than a distance between the bottom of the reflector and the silicon melt surface in the direction perpendicular to the magnetic field.

Abstract: The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible arranged inside the furnace body for containing a silicon melt; a heater having a graphite cylinder arranged around the crucible for heating the silicon melt; a pulling device arranged on the top of the furnace body for pulling out the silicon crystal ingot from the silicon melt; and a magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; wherein a plurality of grooves are provided on the side wall of the graphite cylinder along the axis direction of the graphite cylinder, and a depth of the grooves in the direction of the magnetic field is smaller than a depth of the grooves perpendicular to the direction of the magnetic field.

Abstract: The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible arranged inside the furnace body to receive the silicon melt; a pulling device arranged on the top of the furnace body, used to remove the silicon melt body; a horizontal magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; and a deflector, being barrel-shaped and disposed above the silicon melt in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot through the deflector in the vertical direction; wherein the bottom of the deflector has different thermal reflection coefficients at different positions, and the thermal reflection coefficient of the bottom of the deflector in the direction of the horizontal magnetic field is smaller than that in the direction perpendicular to the horizontal magnetic field.

Abstract: The present invention provides a semiconductor crystal growth apparatus, which comprises a furnace body, a crucible, a pulling device, a deflector, and a magnetic field applying device. The crucible is disposed inside the furnace body for containing silicon melt. The pulling device is disposed on the top of the furnace body for pulling a silicon ingot from the silicon melt. The deflector is in a barrel shape and is disposed in the furnace body in a vertical direction, and the pulling device pulls the silicon ingot in a vertical direction and through the deflector. The magnetic field applying device is configured to apply a magnetic field to the silicon melt in the crucible, in which the distance between the bottom of the deflector and the liquid level of the silicon melt in the direction of the magnetic field is less than that between the bottom of the deflector and the silicon melt in the direction perpendicular to the direction of the magnetic field.

Abstract: The invention provides a semiconductor crystal growth device. It comprises: a furnace body; a crucible, arranged inside the furnace body to receive the silicon melt; a pulling device arranged on the top of the furnace body, and is used to pulling out the silicon crystal ingot from the silicon melt body; a deflector, being barrel-shaped and disposed above the silicon melt in the furnace in a vertical direction, and the pulling device pulls the silicon crystal ingot passing through the deflector in a vertical direction; and a magnetic field applying device for applying a horizontal magnetic field to the silicon melt in the crucible; wherein the silicon crystal is pulled by the pulling device during the ingot passing through the deflector, the distance between the bottom of the deflector and the silicon crystal ingot in the direction of the magnetic field is greater than that in the direction perpendicular to the magnetic field.

Abstract: The invention provides a method and a device for controlling the safe lifting of a silicon melt crucible. The method includes: obtaining an initial position height POS0 of the crucible, an initial liquid level D0 of the silicon melt in the crucible, and an initial distance MG0 between the liquid level of the silicon melt and the deflector; obtaining the current position height of the crucible POSL and the current liquid level DL of the silicon melt in the crucible at a current silicon ingot growth length L; judging whether the current position height of the crucible is safe or not at the current silicon ingot growth length L according to the initial position height POS0, the current position height POSL, the initial liquid level D0, and the current liquid level DL.

Abstract: The present application provides a draft tube of crystal growing furnace and the crystal growing furnace. The draft tube comprises an inner tube, an outer tube and a thermal insulating material sandwiched between the inner tube and the outer tube, wherein the inner tube has a thermal resistance lower than that of the outer tube. Accordingly, the outer tube having the higher thermal resistance reduces the heat transfer from the outer tube to the inner tube, thereby the temperature of the inner tube can be reduced, the heat radiation from the ingot surface to the inner tube can be enhanced, and the vertical temperature gradient of the ingot can be increased. At the same time, the temperature of the outer tube increases to reduce the condensation of silica vapor (SiOx) evaporated from the silicon melt surface, thereby impurity formation and dislocation defect caused by the SiOx fallen into the silicon melt can be prevented.