Patents by Inventor Hanying Feng

Hanying Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10846442
    Abstract: Methods provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.
    Type: Grant
    Filed: July 16, 2018
    Date of Patent: November 24, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Jun Ye, Yu Cao, Hanying Feng, Wenjin Shao
  • Patent number: 10424396
    Abstract: The present disclosure provides a computer-implemented method for analyzing variants from a plurality of nucleic acid sequence reads using a computation pipeline, which comprises a module depending on a location-dependent parameter. The method comprises executing on a processor the steps of: receiving a plurality of nucleic acid sequence reads comprising at least a first nucleic acid sequence read and a second nucleic acid sequence read; mapping the first nucleic acid sequence read and the second nucleic acid sequence read to a first location and a second location in a genome, respectively; setting a first value and a second value for the location-dependent parameter on the basis of the first location and the second location in the genome, respectively; passing the first nucleic acid sequence read and the second nucleic acid sequence read through the module using the first value and the second value, respectively; and generating a variant call.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: September 24, 2019
    Inventors: Jun Ye, Wei Zhou, Luoqi Chen, Hanying Feng, Hong Chen, Xiaofeng Liu
  • Patent number: 10423075
    Abstract: The present invention relates to methods and systems for designing gauge patterns that are extremely sensitive to parameter variation, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features. The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variation. The method may also include designing gauges which have more than one test patterns, such that a combined response of the gauge can be tailored to generate a certain response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variation leads to robust performance against random measurement error and/or any other measurement error.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: September 24, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Hanying Feng, Yu Cao, Jun Ye, Youping Zhang
  • Patent number: 10424395
    Abstract: The present disclosure provides a computer-implemented method of analyzing variants from a plurality of nucleic acid sequence reads. The method uses a computation pipeline having at least one invariable module and at least one variable module, wherein the variable module depends on a variable parameter. The method includes executing on a processor the steps of receiving the plurality of nucleic acid sequence reads; setting a plurality of values for the variable parameter; passing the plurality of the nucleic acid sequence reads through the invariable module to generate an intermediate output; passing the intermediate output through the variable module for multiple rounds, each round using one of the variable values; and generating a plurality of variant calls.
    Type: Grant
    Filed: March 24, 2016
    Date of Patent: September 24, 2019
    Inventors: Jun Ye, Wei Zhou, Luoqi Chen, Hanying Feng, Hong Chen, Xiaofeng Liu
  • Patent number: 10401732
    Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: September 3, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Duan-Fu Hsu, Luoqi Chen, Hanying Feng, Rafael C. Howell, Xinjian Zhou, Yi-Fan Chen
  • Patent number: 10310371
    Abstract: An efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and optimizing target gray level for each evaluation point in each OPC iteration based on this function. In one given embodiment, the function is approximated as a polynomial function of focus and exposure, R(?,ƒ)=P0+ƒ2·Pb with a threshold of T+V? for contours, where PO represents image intensity at nominal focus, ƒ represents the defocus value relative to the nominal focus, ? represents the exposure change, V represents the scaling of exposure change, and parameter “Pb” represents second order derivative images. In another given embodiment, the analytical optimal gray level is given for best focus with the assumption that the probability distribution of focus and exposure variation is Gaussian.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: June 4, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Jun Ye, Yu Cao, Hanying Feng
  • Patent number: 10169522
    Abstract: The present invention relates to a method for tuning lithography systems so as to allow different lithography systems to image different patterns utilizing a known process that does not require a trial and error process to be performed to optimize the process and lithography system settings for each individual lithography system. According to some aspects, the present invention relates to a method for a generic model-based matching and tuning which works for any pattern. Thus it eliminates the requirements for CD measurements or gauge selection. According to further aspects, the invention is also versatile in that it can be combined with certain conventional techniques to deliver excellent performance for certain important patterns while achieving universal pattern coverage at the same time.
    Type: Grant
    Filed: November 17, 2014
    Date of Patent: January 1, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Yu Cao, Hanying Feng, Jun Ye
  • Publication number: 20180322224
    Abstract: Methods provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.
    Type: Application
    Filed: July 16, 2018
    Publication date: November 8, 2018
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Jun Ye, Yu Cao, Hanying Feng, Wenjin Shao
  • Patent number: 10025885
    Abstract: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.
    Type: Grant
    Filed: January 5, 2015
    Date of Patent: July 17, 2018
    Assignee: ASML Netherlands B.V.
    Inventors: Jun Ye, Yu Cao, Hanying Feng, Wenjin Shao
  • Patent number: 10025198
    Abstract: The present invention generally relates to simulating a lithographic process, and more particularly to methods for smart selection and smart weighting when selecting parameters and/or kernels used in aerial image computation. According to one aspect, advantages in simulation throughput and/or accuracy can be achieved by selecting TCC kernels more intelligently, allowing highly accurate aerial images to be simulated using a relatively fewer number of TCC kernels than in the state of the art. In other words, the present invention allows for aerial images to be simulated with the same or better accuracy using much less simulation throughput than required in the prior art, all else being equal.
    Type: Grant
    Filed: November 9, 2009
    Date of Patent: July 17, 2018
    Assignee: ASML Netherlands B.V.
    Inventors: Yu Cao, Wenjin Shao, Hanying Feng, Fei Du, Martin Snajdr
  • Patent number: 9779186
    Abstract: Methods are disclosed to create efficient model-based Sub-Resolution Assist Features (MB-SRAF). An SRAF guidance map is created, where each design target edge location votes for a given field point on whether a single-pixel SRAF placed on this field point would improve or degrade the aerial image over the process window. In one embodiment, the SRAF guidance map is used to determine SRAF placement rules and/or to fine-tune already-placed SRAFs. The SRAF guidance map can be used directly to place SRAFs in a mask layout. Mask layout data including SRAFs may be generated, wherein the SRAFs are placed according to the SRAF guidance map. The SRAF guidance map can comprise an image in which each pixel value indicates whether the pixel would contribute positively to edge behavior of features in the mask layout if the pixel is included as part of a sub-resolution assist feature.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: October 3, 2017
    Assignee: ASML Netherlands B.V.
    Inventors: Jun Ye, Yu Cao, Hanying Feng
  • Publication number: 20170176864
    Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics.
    Type: Application
    Filed: March 6, 2017
    Publication date: June 22, 2017
    Applicant: ASML Netherlands B.V.
    Inventors: Duan-Fu HSU, Luoqi Chen, Hanying Feng, Rafael C. Howell, Xinjian Zhou, Yi-Fan Chen
  • Patent number: 9619603
    Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein, and preferably including optimizing a source, a mask, and the projection optics. The projection optics is sometimes broadly referred to as “lens”, and therefore the joint optimization process may be termed source mask lens optimization (SMLO). SMLO is desirable over existing source mask optimization process (SMO), partially because including the projection optics in the optimization can lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics can be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.
    Type: Grant
    Filed: November 17, 2014
    Date of Patent: April 11, 2017
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Hanying Feng, Yu Cao, Jun Ye
  • Patent number: 9588438
    Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics.
    Type: Grant
    Filed: November 9, 2011
    Date of Patent: March 7, 2017
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Duan-Fu Hsu, Luoqi Chen, Hanying Feng, Rafael C. Howell, Xinjian Zhou, Yi-Fan Chen
  • Publication number: 20160283654
    Abstract: The present disclosure provides a computer-implemented method of analyzing variants from a plurality of nucleic acid sequence reads. The method uses a computation pipeline having at least one invariable module and at least one variable module, wherein the variable module depends on a variable parameter. The method includes executing on a processor the steps of receiving the plurality of nucleic acid sequence reads; setting a plurality of values for the variable parameter; passing the plurality of the nucleic acid sequence reads through the invariable module to generate an intermediate output; passing the intermediate output through the variable module for multiple rounds, each round using one of the variable values; and generating a plurality of variant calls.
    Type: Application
    Filed: March 24, 2016
    Publication date: September 29, 2016
    Inventors: Jun Ye, Wei Zhou, Luoqi Chen, Hanying Feng, Hong Chen, Xiaofeng Liu
  • Publication number: 20160283655
    Abstract: The present disclosure provides a computer-implemented method for analyzing variants from a plurality of nucleic acid sequence reads using a computation pipeline, which comprises a module depending on a location-dependent parameter. The method comprises executing on a processor the steps of: receiving a plurality of nucleic acid sequence reads comprising at least a first nucleic acid sequence read and a second nucleic acid sequence read; mapping the first nucleic acid sequence read and the second nucleic acid sequence read to a first location and a second location in a genome, respectively; setting a first value and a second value for the location-dependent parameter on the basis of the first location and the second location in the genome, respectively; passing the first nucleic acid sequence read and the second nucleic acid sequence read through the module using the first value and the second value, respectively; and generating a variant call.
    Type: Application
    Filed: March 24, 2016
    Publication date: September 29, 2016
    Inventors: Jun Ye, Wei Zhou, Luoqi Chen, Hanying Feng, Hong Chen, Xiaofeng Liu
  • Publication number: 20160246168
    Abstract: An efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and optimizing target gray level for each evaluation point in each OPC iteration based on this function. In one given embodiment, the function is approximated as a polynomial function of focus and exposure, R(?,ƒ)=P0+ƒ2·Pb with a threshold of T+V? for contours, where PO represents image intensity at nominal focus, ƒ represents the defocus value relative to the nominal focus, ? represents the exposure change, V represents the scaling of exposure change, and parameter “Pb” represents second order derivative images. In another given embodiment, the analytical optimal gray level is given for best focus with the assumption that the probability distribution of focus and exposure variation is Gaussian.
    Type: Application
    Filed: May 2, 2016
    Publication date: August 25, 2016
    Applicant: ASML NETHERLANDS B.V
    Inventors: Jun YE, Yu CAO, Hanying FENG
  • Patent number: 9390206
    Abstract: A method of efficient simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and generating the simulated image utilizing the function, where the simulated image represents the imaging result of the target design for the lithographic process.
    Type: Grant
    Filed: August 29, 2013
    Date of Patent: July 12, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Jun Ye, Yu Cao, Hanying Feng
  • Patent number: 9378309
    Abstract: Described herein are methods for matching the characteristics of a lithographic projection apparatus to a reference lithographic projection apparatus, where the matching includes optimizing illumination source and projection optics characteristics. The projection optics can be used to shape wavefront in the lithographic projection apparatus. According to the embodiments herein, the methods can be accelerated by using linear fitting algorithm or using Taylor series expansion using partial derivatives of transmission cross coefficients (TCCs).
    Type: Grant
    Filed: June 3, 2014
    Date of Patent: June 28, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Hanying Feng, Yu Cao, Jun Ye
  • Patent number: 9360766
    Abstract: The present invention relates to an efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features. The method includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic process; and optimizing target gray level for each evaluation point in each OPC iteration based on this function. In one given embodiment, the function is approximated as a polynomial function of focus and exposure, R(?, f )=P0+f2·Pb with a threshold of T+V? for contours, where P0 represents image intensity at nominal focus, f represents the defocus value relative to the nominal focus, ? represents the exposure change, V represents the scaling of exposure change, and parameter “Pb” represents second order derivative images.
    Type: Grant
    Filed: December 18, 2009
    Date of Patent: June 7, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Jun Ye, Yu Cao, Hanying Feng