Patents by Inventor Hanzhong Xiao

Hanzhong Xiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method providing an improved bi-layer photoresist pattern
    Publication number: 20060166145
    Abstract: A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.
    Type: Application
    Filed: March 24, 2006
    Publication date: July 27, 2006
    Inventors: Hanzhong Xiao, Helen Zhu, Kuo-Lung Tang, S.M. Sadjadi
  • Method providing an improved bi-layer photoresist pattern
    Patent number: 7049052
    Abstract: A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.
    Type: Grant
    Filed: May 9, 2003
    Date of Patent: May 23, 2006
    Assignee: Lam Research Corporation
    Inventors: Hanzhong Xiao, Helen H. Zhu, Kuo-Lung Tang, S. M. Reza Sadjadi
  • Methods and apparatus for the optimization of photo resist etching in a plasma processing system
    Patent number: 6949469
    Abstract: In a plasma processing system, a method of minimizing the differences in an etch rate of a photo resist material in different regions of a substrate is disclosed. The method includes introducing the substrate having in sequential order thereon, an underlying layer and the photo-resist layer. The method also includes flowing the etchant gas mixture into a plasma reactor of the plasma processing system, the etchant gas mixture comprising a flow of a fluorine containing gas between about 0.1% and about 10% of the etchant gas mixture. The method further includes striking a plasma from the gas mixture; etching the photo-resist layer with the plasma; and, removing the substrate from the plasma reactor.
    Type: Grant
    Filed: December 16, 2003
    Date of Patent: September 27, 2005
    Assignee: Lam Research Corporation
    Inventors: Yu Cheng, Helen Zhu, Vinay V. Phoray, Hanzhong Xiao, Peter K. Loewenhardt
  • Method providing an improved bi-layer photoresist pattern
    Publication number: 20040224264
    Abstract: A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.
    Type: Application
    Filed: May 9, 2003
    Publication date: November 11, 2004
    Applicant: Lam Research Corporation
    Inventors: Hanzhong Xiao, Helen H. Zhu, Kuo-Lung Tang, S.M. Reza Sadjadi