Abstract: Inductive elements comprising anisotropic media and biasing coils for magnetically biasing thereof and methods of manufacture and operation for use in applications such as microelectronics. Application of an electrical current through the bias coils generates a magnetic field that biases the magnetic material such that a desirable orientation of anisotropy is achieved throughout the magnetic core and enables modulation of the inductive response of the device. Electrical conductors coupled to interconnects are magnetically coupled to magnetic core layers to produce self and/or mutual inductors.

Abstract: Network link processing method, apparatus, and system are disclosed. For example, the method includes: generating an interface-invocation request carrying a target link, a number of bytes of the target link being greater than a preset threshold; sending the interface-invocation request to an open platform server; receiving a unique identifier string sent by the open platform server, a number of bytes of the unique identifier string being less than the preset threshold; and providing the unique identifier string to a client.

Abstract: The present disclosure provides antibodies that specifically bind to human OX40 receptor (OX40) and compositions comprising such antibodies. In a specific aspect, the antibodies specifically bind to human OX40 and modulate OX40 activity, e.g., enhance, activate, or induce OX40 activity, or reduce, deactivate, or inhibit OX40 activity. The present disclosure also provides methods for treating disorders, such as cancer, by administering an antibody that specifically binds to human OX40 and modulates OX40 activity, e.g., enhances, activates, or induces OX40 activity. Also provided are methods for treating autoimmune or inflammatory diseases or disorders, by administering an antibody that specifically binds to human OX40 and modulates OX40 activity, e.g., reduces, deactivates, or inhibits OX40 activity.

Abstract: A method for forming a semiconductor device structure is provided. The method includes receiving a first wafer having multiple predetermined die areas. The method also includes forming a recess in the first wafer, and the recess extends in a direction substantially parallel to an edge of one of the predetermined die areas. The method further includes receiving a second wafer. In addition, the method includes bonding the first wafer and the second wafer at an elevated temperature after the recess is formed.

Abstract: An information input method and device are provided, which are related to the technical field of input method. The method comprises: acquiring candidates corresponding to an encoded string that is inputted, and determining a target query string from the candidates; searching the target query string, and obtaining a corresponding search result; extracting corresponding target content from the search result; and when an information-ending interface of a first chat client is detected to be triggered, using a first template provided by the first chat client to reconstruct the target content into first template information recognizable by the first chat client, and sending the first template information to a second chat client.

Abstract: A semiconductor structure includes a plurality of stacks, a plurality of active pillars, and an insulating material. The stacks are separated from each other by a plurality of trenches. The active pillars are disposed in the trenches and separated from each other in each of the trenches. Each of the active pillars comprises two n-type heavily doped portions at two sides thereof. Each of the two n-type heavily doped portions extends in a substantially vertical direction. Each of the two n-type heavily doped portions connects corresponding two stacks of the plurality of stack. The insulating material is located in remaining spaces of the trenches between the active pillars. The insulating material is a silicon glass comprising an element which is applicable as a n-type dopant.

Abstract: A method for forming a semiconductor device is provided. A substrate is provided. An epitaxial layer is formed on the substrate. An insulation region and an active region are defined on the upper surface of the epitaxial layer. An insulation structure is formed within the insulation region by an ion implantation process and an etching process, wherein the insulation structure includes a first insulation structure and a second insulation structure. A gate is formed on the epitaxial layer and is disposed within the active region. A source and a drain are formed on opposite sides of the gate and within the active region. A semiconductor device is also provided.

Abstract: The present disclosure discloses an actuator, comprising a first torsion spring body and a second torsion spring body, each of the first torsion spring body and the second torsion spring body comprising: an inner ring; an outer ring; and a plurality of elastic units, connected in parallel between the inner ring and the outer ring. An outer ring of the first torsion spring body and an outer ring of the second torsion spring body are rigidly connected, and an inner ring of the first torsion spring body and an inner ring of the second torsion spring body are aligned with each other. The actuator further includes a motor element and a braking element. The motor element is for providing an output torque, and is connected with the inner ring of the first torsion spring body. The braking element is for providing a braking torque, and is connected with the inner ring of the second torsion spring body.

Abstract: Certain aspects of the present disclosure generally relate to wireless communications, and more specifically to positioning reference signal (PRS) enhancements for enhanced machine type communication (eMTC). An example method generally includes determining a first bandwidth within a larger system bandwidth to transmit a first positioning reference signal (PRS) to a first type of user equipment (UE), determining a second bandwidth within the system bandwidth to transmit a second PRS to a second type of UE, and transmitting information associated with the first PRS and the second PRS.

Abstract: An electrostatic discharge (ESD) protection device includes a substrate, a first gate group and a second gate group on the substrate, a drain region and a fourth doped region respectively at two sides of the first gate group, a source region and the fourth doped region respectively at two sides of the second gate group, a first doped region in the substrate and surrounded by the drain region, and a second doped region in the substrate and surrounded by the fourth doped region. The drain region and the source region have a first conductivity type. The first doped region and the second doped region have a second conductivity type complementary to the first conductivity type. The drain region is electrically connected to an input/output pad. The source region is electrically connected to a ground pad. The first doped region and the second doped region are electrically connected to each other.

Abstract: A measuring device includes a first body, a second body slidably combined with the first body, a first pressure sensing component, and a control unit. The first body is for supporting a cup receiving liquid. The first pressure sensing component is disposed between the first body and the second body for sensing weight of the cup and the liquid and generating a signal corresponding to the weight. The control unit is electrically connected to the first pressure sensing component. The control unit determines a volume variation of the liquid according to a weight variation of the cup and the liquid calculated based on a difference between signals transmitted from the first pressure sensing component at different time points.

Abstract: Visualization of a cohort for high-dimensional categorical data is disclosed. One example is a system including a display module to identify real-time selection of a query data element in an interactive visual representation of high-dimensional categorical data elements comprising a plurality of categorical components. A matrix generator generates a binary distance matrix with columns representing categorical components, and entries in a row indicative of a degree of similarity of respective categorical components of the selected query data element to a data element represented by the row, and determines a category weighting matrix by associating a weight with entries in each column of the binary distance matrix. An evaluator evaluates a weighted similarity score for a data element represented by a row of the category weighting matrix based on entries of the row. A selector iteratively and interactively selects, based on weighted similarity scores, a cohort of categorical data elements.

Abstract: A developing method comprises steps as follows. A wafer is rotated. A developer solution is dispensed onto the rotated wafer through a first nozzle. The first nozzle is moved back and forth between a first position and a second position, in which moving the first nozzle back and forth is performed such that the first nozzle moving forward to the second position is reversed at the second position and that the first nozzle moving forward to the first position is reversed at the first position, and the first position and the second position are directly over the wafer, and the developer solution is dispensed through the first nozzle when moving the first nozzle back and forth between the first position and the second position.

Abstract: A method, an apparatus, and a computer program product for wireless communication are provided. The apparatus may receive a primary synchronization signal (PSS) and a secondary synchronization signal (SSS) in a first set of symbols of a first subframe of a frame. Within the first set of symbols of the first subframe, the SSS is prior to the PSS. The apparatus may also receive the PSS and the SSS in a first set of symbols of a second subframe of the frame and a second set of symbols of the second subframe of the frame. Within each of the first and second sets of symbols of the second subframe, the SSS is subsequent to the PSS. The apparatus may synchronize with a base station based at least in part on the PSS and the SSS.

Abstract: Described herein are systems, methods, and software to enhance failover operations in a cloud computing environment. In one implementation, a method of operating a first service instance in a cloud computing environment includes obtaining a communication from a computing asset, wherein the communication comprises a first destination address. The method further provides replacing the first destination address with a second destination address in the communication, wherein the second destination address comprises a shared address for failover from a second service instance. After replacing the address, the method determines whether the communication is permitted based on the second destination address, and if permitted, processes the communication in accordance with a service executing on the service instance.

Abstract: Methods, systems, and devices for wireless communication are described. A user equipment (UE) may select a coverage enhancement (CE) level based on a coverage limitation. The UE may then receive system information from a base station indicating an index of CE levels and corresponding physical random access channel (PRACH) configurations, and the UE may transmit a random access preamble using the PRACH configuration for the selected CE level. For example, the UE may transmit the preamble based on a frequency offset that corresponds to the selected CE level. In some cases, the UE and base station may also associate groups of preambles with downlink (DL) CE levels. The UE may select a preamble from a group corresponding to a desired DL CE level for a random access response message. The base station may determine the DL CE level based on the group the preamble was selected from and respond accordingly.

Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.

Abstract: A method for managing a vehicle brake system includes collecting sensor data from one or more sensors in or around the vehicle, calculating brake effectiveness values based on the sensor data, calibrating the brake effectiveness values based on environmental context data associated with the vehicle, accumulating the calibrated brake effectiveness values as a dataset, generating a prediction curve or formula based the dataset, and scheduling a maintenance alarm for the brake system based on the brake effectiveness values.

Abstract: An image sensor includes a semiconductor substrate, a photodiode formed in the semiconductor substrate, a microlens disposed over the photodiode, a first transfer transistor, a second transfer transistor and a capacitor. The first transfer transistor and the second transfer transistor are formed on the semiconductor substrate, and a memory node is formed in the semiconductor substrate between the first transfer transistor and the second transfer transistor, wherein the first transfer transistor is coupled to the photodiode. The capacitor is formed between the first transfer transistor and the second transfer transistor, and the capacitor includes a first electrode coupled to the memory node, a second electrode on the first electrode and extending to an edge of the photodiode, and a dielectric layer between the first and the second electrodes.