Abstract: A method for forming a gaseous spacer in a semiconductor device and a semiconductor device including the gaseous spacer are disclosed. In an embodiment, the method may include forming a gate stack over a substrate, depositing a first gate spacer on sidewalls of the gate stack, epitaxially growing source/drain regions on opposite sides of the gate stack, and depositing a second gate spacer over the first gate spacer to form a gaseous spacer below the second gate spacer. The gaseous spacer may be disposed laterally between the source/drain regions and the gate stack.

Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.

Abstract: Improvements in the functioning of a line-mounted device to calculate a fault current magnitude during current transformer (CT) saturation are disclosed herein. The line-mounted device may determine direct current (DC) components of a sampled current signal using valid sample pairs obtained during unsaturated regions of peaks of the sampled current signal. The DC components may be removed from the sampled current signal to produce a sinusoidal current signal. The fault current magnitude may be calculated using the sinusoidal current signal with the DC components removed.

Abstract: This application provides a data communication method, a terminal, and a base station. In one embodiment, the terminal receives a first demodulation reference signal based on a first physical resource block index, wherein the first physical resource block index is determined based on a first location in frequency domain, and the first demodulation reference signal is usable for demodulating a first data channel for carrying a system information block; the terminal sends and/or receives a second demodulation reference signal based on a second physical resource block index, wherein the second physical resource block index is determined based on a second location in frequency domain, and the second demodulation reference signal is usable for demodulating a second data channel other than the first data channel.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a base station may schedule a plurality of repetitions of at least one system information block for a plurality of dwells within a hop cycle, wherein a subset of dwells, of the plurality of dwells within the hop cycle, includes a resource allocated for a respective portion of a corresponding repetition of a corresponding system information block of the plurality of repetitions of the at least one system information block. The base station may transmit, during the subset of dwells of the plurality of dwells within the hop cycle, the respective portion of the corresponding repetition of the corresponding system information block or another signal punctured into the respective portion of the corresponding repetition of the corresponding system information block. Numerous other aspects are provided.

Abstract: A reference circuit for generating a reference current includes a plurality of resistive elements including at least one magnetic tunnel junction (MTJ). A control circuit is coupled to a first terminal of the at least one MTJ and is configured to selectively flow current through the at least one MTJ in the forward and inverse direction to generate a reference current.

Abstract: Provided herein is a process for the preparation of 4-((6-(2-(2,4-difluorophenyl)-1, 1-difluoro-2-hydroxy-3-(1H-1,2,4-triazol-1-yl)propyl)pyridin-3-yl)oxy)benzonitrile.

Abstract: A test system including an image capturing apparatus, a server apparatus, and a behavior actuation apparatus is provided. The server apparatus is coupled to the image capturing apparatus, drives the image capturing apparatus to take an image of an application of a device under test, analyzes the image to obtain object information in the image, and obtains a corresponding test procedure based on the object information. The behavior actuation apparatus is coupled to the server apparatus, receives the test procedure from the server apparatus, generates a control signal based on the test procedure, and transmits the control signal to the device under test as an inputting signal of the application.

Abstract: An electronic device includes a substrate, first signal lines, pixel structures, first pads, transmission pads, a first combination circuit board, and a transmission circuit board. The first pads are electrically connected to some of a plurality of first signal lines. The transmission pads are electrically connected to some of the first signal lines. The first combination circuit board is disposed between a first side and a second side of the substrate opposite to each other. The transmission circuit board is disposed between the first combination circuit board and the second side of the substrate. The first combination circuit board is electrically connected to at least some of the first pads, and a first pitch exists between the adjacent first pads. The transmission pads are electrically connected to the transmission circuit board, and a transmission-pad pitch exists between the adjacent transmission pads. The transmission-pad pitch is greater than the first pitch.

Abstract: Embodiments of this application provide a data processing method and apparatus. The method includes: receiving, by a first device, control information, where the control information includes information about a first resource and information about a HARQ process; further receiving, by the first device on a second resource, data associated with the control information; and placing the data into a buffer of a HARQ process of a HARQ entity associated with the first resource. The associated data is sent on the plurality of resources.

Abstract: A device and method for data protection, and a storage controller, related to the technical field of data protection. The device comprises: an encryption unit (11), used for receiving first data to be written into a storage module and first storage address information (401), and for encrypting the first data on the basis of the first storage address information and of feature information of the storage module (402); and a decryption unit (12), used for reading from the storage module second data corresponding to second storage address information (403), and for decrypting the second data on the basis of the second storage address information and of the feature information (404).

Abstract: The present disclosure discloses a boron neutron capture therapy system comprising: a boron neutron capture therapy device and an ?-amino acid-like boron trifluoride compound having a structure shown as formula (I) below: Wherein: R is selected from hydrogen, methyl, isopropyl, 1-methylpropyl, 2-methylpropyl, hydroxymethyl, 1-hydroxyethyl, benzyl or hydroxybenzyl; M is H or metal atom. The energy generated from the action of the neutron beam generated by the boron neutron capture therapy device on the ?-amino acid-like boron trifluoride compound destroys tumor cell DNA. In another aspect, the present disclosure discloses a use of an ?-amino acid-like boron trifluoride compound in the preparation of a medicament for tumor therapy.

Abstract: The present disclosure relates to a vibration-type sensor for measuring the density and/or the mass flow rate of a medium, having at least one first oscillator, the sensor including: a curved first measuring tube; a curved second measuring tube; at least one first elastic vibration coupler that couples the first measuring tube and the second measuring tube to each; and at least one exciter for exciting oscillator vibrations in a bending vibration mode. The oscillator has a first oscillator resonant frequency for when the measuring tubes vibrate approximately in phase in the bending vibration mode and a greater second oscillator resonant frequency for when the measuring tubes vibrate approximately in counterphase in the bending vibration mode. The first and second measuring tubes have resonant frequencies differing from their arithmetic mean by no more than 8%, no more than 4%, no more than 2% or no more than 1%.

Abstract: A method for generating a multicarrier signal formed by a temporal succession of multicarrier symbols, implementing the following steps for generating at least one block of multicarrier symbols: coding a set of information elements delivering a set of coded elements; puncturing a first sub-set of coded elements of the set of coded elements, according to a first puncturing pattern, delivering a first sub-set of punctured coded elements; puncturing a second sub-set of coded elements of the set of coded elements, complementary to the first sub-set, according to a second puncturing pattern, delivering a second sub-set of punctured coded elements; mapping, onto at least one complex symbol, of the punctured coded elements of the first and second sub-sets of punctured coded elements; and generating the block of multicarrier symbols from said at least one complex symbol.

Abstract: Resist materials having enhanced sensitivity to radiation are disclosed herein, along with methods for lithography patterning that implement such resist materials. An exemplary resist material includes a polymer, a sensitizer, and a photo-acid generator (PAG). The sensitizer is configured to generate a secondary radiation in response to the radiation. The PAG is configured to generate acid in response to the radiation and the secondary radiation. The PAG includes a sulfonium cation having a first phenyl ring and a second phenyl ring, where the first phenyl ring is chemically bonded to the second phenyl ring.

Abstract: One illustrative transistor device disclosed herein includes, among other things, a gate positioned above a semiconductor substrate, the gate comprising a gate structure, a conductive source/drain metallization structure positioned adjacent the gate, the conductive source/drain metallization structure having a front face, and an insulating spacer that is positioned on and in contact with at least a portion of the front face of the conductive source/drain metallization structure. In this example, the device also includes a gate contact opening that exposes at least a portion of the insulating spacer and a portion of an upper surface of the gate structure and a conductive gate contact structure positioned in the gate contact opening, wherein the conductive gate contact structure contacts at least a portion of the insulating spacer and wherein the conductive gate contact structure is conductively coupled to the gate structure.

Abstract: Adjacent channel leakage-power ratio (ACLR) can be reduced at a transmitter of a device. A modulated signal can be mapped into a plurality of tone sets in a frequency domain, wherein the plurality of tone sets include a first, a second, and a third set of tones. The first and the third set of tones can be converted in the frequency domain to a fourth and a fifth set of tones, respectively, in a time domain. A zero padding of one or more symbols associated with the fourth and the fifth set of tones can be performed to output a sixth and a seventh set of tones, respectively. The sixth and the seventh set of tones can be converted to an eighth and a ninth set of tones, respectively, in the frequency domain. The eighth and the ninth set of tones can be processed for transmitting to another wireless device.

Abstract: A semiconductor device has a substrate, a first dielectric fin, and an isolation structure. The substrate has a first semiconductor fin. The first dielectric fin is disposed over the substrate and in contact with a first sidewall of the first semiconductor fin, in which a width of the first semiconductor fin is substantially equal to a width of the first dielectric fin. The isolation structure is in contact with the first semiconductor fin and the first dielectric fin, in which a top surface of the isolation structure is in a position lower than a top surface of the first semiconductor fin and a top surface of the first dielectric fin.

Abstract: A dynamic bit-line clamping circuit for computing-in-memory applications is configured to clamp a bit line via at least one reference signal and includes a clamping node, a first clamping unit, a second clamping unit, a first feedback controlling unit and a second feedback controlling unit. The first clamping unit is electrically connected between the bit line and the clamping node. The second clamping unit is electrically connected between the clamping node and a power source voltage and includes a switch. The second feedback controlling unit is electrically connected to the clamping node and the switch. The second feedback controlling unit generates a switching signal according to the at least one reference signal and a voltage level of the clamping node. The switch is switched by the switching signal so as to clamp the voltage level of the clamping node according to the at least one reference signal.

Abstract: A method includes forming a carbon-containing layer with a carbon atomic percentage greater than about 25 percent over a first hard mask layer, forming a capping layer over the carbon-containing layer, forming a first photo resist over the capping layer, and etching the capping layer and the carbon-containing layer using the first photo resist as a first etching mask. The first photo resist is then removed. A second photo resist is formed over the capping layer. The capping layer and the carbon-containing layer are etched using the second photo resist as a second etching mask. The second photo resist is removed. A third photo resist under the carbon-containing layer is etched using the carbon-containing layer as etching mask. A dielectric layer underlying the third photo resist is etched to form via openings using the third photo resist as etching mask. The via openings are filled with a conductive material.