Patents by Inventor Hao-Che Feng

Hao-Che Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190371916
    Abstract: A semiconductor structure having a metal gate includes a dielectric layer. The dielectric layer having a recess is disposed on a substrate, wherein the dielectric layer has a top part and a bottom part, and the tensile stress of the top part is larger than the tensile stress of the bottom part, thereby the recess having a sidewall profile tapering from bottom to top. The present invention also provides a method of forming said semiconductor structure.
    Type: Application
    Filed: June 26, 2018
    Publication date: December 5, 2019
    Inventors: Jing-Yi Lin, Yi-Wen Chen, Hung-Yi Wu, Ping-Wei Huang, Shao-Wei Wang, Yueh-Chi Chuang, Hung-Jen Huang, Hao-Che Feng