Abstract: A chip package structure including a heat dissipation base, a first redistribution layer, a second redistribution layer, at least one chip, at least one metal stack, a plurality of conductive structures, and an encapsulant is provided. The second redistribution layer is disposed on the heat dissipation base and thermally coupled to the heat dissipation base. The chip, the metal stack, and the conductive structures are disposed between the second redistribution layer and the first redistribution layer. An active surface of the chip is electrically connected to the first redistribution layer and an inactive surface of the chip is thermally coupled to the second redistribution layer via the metal stack. The first redistribution layer is electrically connected to the second redistribution layer via the conductive structures. The encapsulant is filled between the second redistribution layer and the first redistribution layer. A manufacturing method of a chip package structure is also provided.

Abstract: This disclosure relates to a transparent display that includes a transparent substrate, a plurality of wires, and a plurality of electronic components. The wires are disposed on the transparent substrate, and the wires have at least one serpentine part having a first end and a second end that are opposite to each other. There is an extending path formed from the first end to the second end. The electronic components are disposed on the plurality of wires. The wires have at least one part that surrounds an opening area and has a total extending length. The at least one part of the wires includes the at least one serpentine part. A ratio of a sum in length of the at least one serpentine part along the extending path to the total extending length is equal to or greater than 10%.

Abstract: Provided is a barrier film which includes an organo-silicon polymeric composition having Si3—N4 bonds and Si—OH bonds. The peak height of Si4—N4 bonds in an infrared absorption spectrum is represented by A, and the peak height of Si—OH bonds in the infrared absorption spectrum is represented by B; and a ratio of A to B is greater than 2.