Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: There is provided a force sensor including a substrate and a polymer material layer. The substrate has a circuit layout that includes a first electrode and a second electrode configured to form a capacitor therebetween. The polymer material layer covers at least on a space between the first electrode and the second electrode, and is used to change capacitance of the capacitor while being pressed. The force sensor is arranged inside a stem of an earphone for detecting the user input.

Abstract: There is provided a force sensor including a substrate and a polymer material layer. The substrate has a circuit layout that includes a first electrode and a second electrode configured to form a capacitor therebetween. The polymer material layer covers at least on a space between the first electrode and the second electrode, and is used to change capacitance of the capacitor while being pressed. The force sensor is arranged inside a stem of an earphone for detecting the user input.

Abstract: An image transducer and a 3D image capturing system having the image transducer are provided. The image transducer includes a microlens, first function layer, first photosensitive layer, second function layer, second photosensitive layer, first read circuit and second read circuit; thus, the image transducer includes two photosensitive layers and is vertically structured. The two photosensitive layers greatly increase sensing waveband. The 3D image capturing system uses the image transducer to enhance pixel screen fineness of a 3D screen.

Abstract: A living organism image monitoring system is provided, relating to the technical field of medical equipment. The living organism image monitoring system comprises a display module, a processor and a CIGS chip, the CIGS chip, the processor and the display module being electrically connected, the CIGS chip being used for detecting a near infrared light signal of a living organism and generating a current signal after having detected the near infrared light signal, the processor being used for generating a first pulse signal according to the current signal, and the display module being used for displaying an image according to the first pulse signal. The living organism image monitoring system provided by the present disclosure has the advantages of being capable of synchronously transmitting the images of a living organism to the display module for display and enabling the images to be clearer.

Abstract: There is provided a force sensor including a substrate and a polymer material layer. The substrate has a circuit layout that includes a first electrode and a second electrode configured to form a capacitor therebetween. The polymer material layer covers at least on a space between the first electrode and the second electrode, and is used to change capacitance of the capacitor while being pressed. The force sensor is arranged inside a stem of an earphone for detecting the user input.

Abstract: A 3D depth image acquiring method and apparatus, and an image acquisition device are provided. The method is applied to an image acquisition device comprising a VIS-NIR picture sensor and an infrared structured light projection component. The VIS-NIR picture sensor comprises a plurality of dot matrix units each having a blue light photosensitive component, a green light photosensitive component, a red light photosensitive component and an NIR photosensitive component distributed thereon. The method comprises: controlling the blue light photosensitive component, the green light photosensitive component, the red light photosensitive component, the NIR photosensitive component and the infrared structured light projection component to operate, to obtain an optimum NIR image and an optimum VIS image; and processing the optimum VIS image and a depth image which is obtained by performing calculation on the optimum NIR image using a 3D depth mode, to obtain a 3D depth image.

Abstract: Disclosed are a CMOS image sensor encapsulation structure and a method for manufacturing the same, including the steps of: firstly, a transparent substrate material is fixed to a surface of a first insulating layer having a micro convex lens, a dummy wafer is fixed on a surface of the transparent substrate material, and then a wafer is thinned by grinding, and in this process, the transparent substrate material provides more mechanical support force for the wafer, therefore, the wafer can become thinner by grinding, thus the CMOS image sensor encapsulation structure is characterized by being formed in a thin shape. Besides, a second installation area has a protection glue layer which can prevent oxygen and moisture from entering internal elements and absorb scattered light.

Abstract: A CMOS image sensor encapsulation structure and its manufacturing method, including: forming a blind hole in a combined layer formed by a first insulating layer and a wafer, a surface of the first insulating layer facing away from the wafer having a micro convex lens; forming a second insulating layer on a hole wall of the blind hole, then filling an electrically conductive material in the blind hole having the second insulating layer, and making a conductor in the combined layer in signal connection with the micro convex lens and an IC extend to a surface of the first insulating layer and electrically connecting the conductor to the electrically conductive material; fixing the transparent substrate material on a surface of the first insulating layer having the micro convex lens, forming a dummy wafer on a surface of the transparent substrate material, and then thinning the wafer by grinding.

Abstract: A living organism image monitoring system is provided, relating to the technical field of medical equipment. The living organism image monitoring system comprises a display module, a processor and a CIGS chip, the CIGS chip, the processor and the display module being electrically connected, the CIGS chip being used for detecting a near infrared light signal of a living organism and generating a current signal after having detected the near infrared light signal, the processor being used for generating a first pulse signal according to the current signal, and the display module being used for displaying an image according to the first pulse signal. The living organism image monitoring system provided by the present disclosure has the advantages of being capable of synchronously transmitting the images of a living organism to the display module for display and enabling the images to be clearer.

Abstract: Disclosed are a CMOS image sensor encapsulation structure and a method for manufacturing the same, including the steps of: firstly, a transparent substrate material is fixed to a surface of a first insulating layer having a micro convex lens, a dummy wafer is fixed on a surface of the transparent substrate material, and then a wafer is thinned by grinding, and in this process, the transparent substrate material provides more mechanical support force for the wafer, therefore, the wafer can become thinner by grinding, thus the CMOS image sensor encapsulation structure is characterized by being formed in a thin shape. Besides, a second installation area has a protection glue layer which can prevent oxygen and moisture from entering internal elements and absorb scattered light.

Abstract: A CMOS image sensor encapsulation structure and its manufacturing method, including : forming a blind hole in a combined layer formed by a first insulating layer and a wafer, a surface of the first insulating layer facing away from the wafer having a micro convex lens; forming a second insulating layer on a hole wall of the blind hole, then filling an electrically conductive material in the blind hole having the second insulating layer, and making a conductor in the combined layer in signal connection with the micro convex lens and an IC extend to a surface of the first insulating layer and electrically connecting the conductor to the electrically conductive material; fixing the transparent substrate material on a surface of the first insulating layer having the micro convex lens, forming a dummy wafer on a surface of the transparent substrate material, and then thinning the wafer by grinding.

Abstract: A 3D depth image acquiring method and apparatus, and an image acquisition device are provided. The method is applied to an image acquisition device comprising a VIS-NIR picture sensor and an infrared structured light projection component. The VIS-NIR picture sensor comprises a plurality of dot matrix units each having a blue light photosensitive component, a green light photosensitive component, a red light photosensitive component and an NIR photosensitive component distributed thereon. The method comprises: controlling the blue light photosensitive component, the green light photosensitive component, the red light photosensitive component, the NIR photosensitive component and the infrared structured light projection component to operate, to obtain an optimum NIR image and an optimum VIS image; and processing the optimum VIS image and a depth image which is obtained by performing calculation on the optimum NIR image using a 3D depth mode, to obtain a 3D depth image.