Patents by Inventor HaoCheng Tsai

HaoCheng Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Shallow trench isolation structure with sigma cavity
    Patent number: 9548357
    Abstract: Embodiments of the present invention provide an improved shallow trench isolation structure and method of fabrication. The shallow trench isolation cavity includes an upper region having a sigma cavity shape, and a lower region having a substantially rectangular cross-section. The lower region is filled with a first material having good gap fill properties. The sigma cavity is filled with a second material having good stress-inducing properties. In some embodiments, source/drain stressor cavities may be eliminated, with the stress provided by the shallow trench isolation structure. In other embodiments, the stress from the shallow trench isolation structure may be used to complement or counteract stress from a source/drain stressor region of an adjacent transistor. This enables precise tuning of channel stress to achieve a desired carrier mobility for a transistor.
    Type: Grant
    Filed: May 19, 2015
    Date of Patent: January 17, 2017
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: HaoCheng Tsai, Min-hwa Chi
  • SHALLOW TRENCH ISOLATION STRUCTURE WITH SIGMA CAVITY
    Publication number: 20160020275
    Abstract: Embodiments of the present invention provide an improved shallow trench isolation structure and method of fabrication. The shallow trench isolation cavity includes an upper region having a sigma cavity shape, and a lower region having a substantially rectangular cross-section. The lower region is filled with a first material having good gap fill properties. The sigma cavity is filled with a second material having good stress-inducing properties. In some embodiments, source/drain stressor cavities may be eliminated, with the stress provided by the shallow trench isolation structure. In other embodiments, the stress from the shallow trench isolation structure may be used to complement or counteract stress from a source/drain stressor region of an adjacent transistor. This enables precise tuning of channel stress to achieve a desired carrier mobility for a transistor.
    Type: Application
    Filed: May 19, 2015
    Publication date: January 21, 2016
    Inventors: HaoCheng Tsai, Min-hwa Chi
  • Shallow trench isolation structure with sigma cavity
    Patent number: 9076868
    Abstract: Embodiments of the present invention provide an improved shallow trench isolation structure and method of fabrication. The shallow trench isolation cavity includes an upper region having a sigma cavity shape, and a lower region having a substantially rectangular cross-section. The lower region is filled with a first material having good gap fill properties. The sigma cavity is filled with a second material having good stress-inducing properties. In some embodiments, source/drain stressor cavities may be eliminated, with the stress provided by the shallow trench isolation structure. In other embodiments, the stress from the shallow trench isolation structure may be used to complement or counteract stress from a source/drain stressor region of an adjacent transistor. This enables precise tuning of channel stress to achieve a desired carrier mobility for a transistor.
    Type: Grant
    Filed: July 18, 2014
    Date of Patent: July 7, 2015
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: HaoCheng Tsai, Min-hwa Chi