Abstract: An inventory planning system and an inventory planning method for short expiration goods are provided. The inventory planning system includes: a demand forecast model configured to provide a future sales prediction of the at least one short expiration goods according to an expiration period information, a promotion information and a historical sales information of at least one short expiration goods; a promotion forecast model configured to provide a future promotions sales of the at least one short expiration goods according to the expiration period information, the promotion information and the historical sales information of the at least one short expiration goods; and an inventory planning model configured to provide a purchase quantity recommendation of the at least one short expiration goods according to a current stock, the future sales prediction and the future promotions sales of the at least one short expiration goods.

Abstract: A magnetic component includes a core, a winding, a lead frame and a conductive material. The winding is disposed in the core. A winding end of the winding extends to an outer periphery of the core. The lead frame is disposed on the outer periphery of the core. At least one hole is formed on the lead frame and corresponds to the winding end. The conductive material is disposed in the at least one hole. The conductive material is in contact with the winding end.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.