Patents by Inventor Hao-Chun Liang

Hao-Chun Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12002906
    Abstract: The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: June 4, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Hao-Chun Liang, Wei-Shan Yeoh, Yao-Ning Chan, Yi-Ming Chen, Shih-Chang Lee
  • Publication number: 20220059727
    Abstract: The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.
    Type: Application
    Filed: August 19, 2021
    Publication date: February 24, 2022
    Inventors: Hao-Chun Liang, Wei-Shan Yeoh, Yao-Ning Chan, Yi-Ming Chen, Shih-Chang Lee
  • Patent number: D928104
    Type: Grant
    Filed: February 7, 2019
    Date of Patent: August 17, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Fang Kao, Yao-Ning Chan, Hao-Chun Liang, Shih-Chang Lee
  • Patent number: D944218
    Type: Grant
    Filed: July 7, 2021
    Date of Patent: February 22, 2022
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Fang Kao, Yao-Ning Chan, Hao-Chun Liang, Shih-Chang Lee