Patents by Inventor Hao-Chun Liang

Hao-Chun Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250112443
    Abstract: An embodiment of the present disclosure provides a semiconductor device. The semiconductor device has a first semiconductor structure; a second semiconductor structure on the first semiconductor structure and having a first aluminum content; a plurality of voids in the second semiconductor structure; an active structure between the first semiconductor structure and the second semiconductor structure; and a third semiconductor structure between the active structure and the second semiconductor structure, and having a second aluminum content. The first aluminum content is greater than the second aluminum content.
    Type: Application
    Filed: September 27, 2024
    Publication date: April 3, 2025
    Inventors: Po-Chou PAN, Chen OU, Shih-Chang LEE, Wei-Chih PENG, Yao-Ru CHANG, Hao-Chun LIANG
  • Publication number: 20250089400
    Abstract: A semiconductor device, including a base and a semiconductor stack. The semiconductor stack includes a first semiconductor structure located on the base, a second semiconductor structure located on the first semiconductor structure, and an active structure located between the first semiconductor structure and the second semiconductor structure. The active structure includes two confinement layers and a well layer located between the two confinement layers. One of the confinement layers includes Alx1Ga1-x1As, and x1 is equal to or larger than 0.25 and equal to or smaller than 0.4. The well layer includes Inx2Ga1-x2As, and x2 is equal to or larger than 0.25 and equal to or smaller than 0.3. The one of the confinement layers and the well layer respectively have a first thickness in a range of 200 nm to 400 nm and a second thickness in a range of 3 nm to 6 nm.
    Type: Application
    Filed: September 8, 2023
    Publication date: March 13, 2025
    Inventors: Hao-Chun LIANG, Yi-Shan TSAI, Wei-Shan YEOH, Yao-Ning CHAN, Hsuan-Le LIN, Jiong-Chaso SU, Shih-Chang LEE, Chang-Da TSAI
  • Patent number: 12002906
    Abstract: The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: June 4, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Hao-Chun Liang, Wei-Shan Yeoh, Yao-Ning Chan, Yi-Ming Chen, Shih-Chang Lee
  • Publication number: 20220059727
    Abstract: The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.
    Type: Application
    Filed: August 19, 2021
    Publication date: February 24, 2022
    Inventors: Hao-Chun Liang, Wei-Shan Yeoh, Yao-Ning Chan, Yi-Ming Chen, Shih-Chang Lee
  • Patent number: D928104
    Type: Grant
    Filed: February 7, 2019
    Date of Patent: August 17, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Fang Kao, Yao-Ning Chan, Hao-Chun Liang, Shih-Chang Lee
  • Patent number: D944218
    Type: Grant
    Filed: July 7, 2021
    Date of Patent: February 22, 2022
    Assignee: EPISTAR CORPORATION
    Inventors: Hui-Fang Kao, Yao-Ning Chan, Hao-Chun Liang, Shih-Chang Lee