Abstract: A phased array transmitter includes a plurality of signal couplers arranged to receive a radio frequency (RF) input signal, and a plurality of RF transmitters coupled to the signal couplers. Each RF transmitter includes a radiating element, a chip and a phase shifting circuit. The radiating element is arranged to receive a plurality of electrical signals to produce an RF output signal. An amplifier circuit of the chip is configured to amplify the RF input signal to generate a plurality of amplified signals at a plurality of output terminals, respectively. The phase shifting circuit is located outside the chip, and coupled to the output terminals and the radiating element. The phase shifting circuit is arranged to phase shift the amplified signals, and accordingly generate the electrical signals fed to the radiating element. Respective phase shifting circuits and respective radiating elements of the RF transmitters are formed on a same substrate.

Abstract: A method for manufacturing a first radio-frequency (RF) device, including: receiving a substrate having the first RF device, wherein the first RF device has a signal port for receiving or transmitting RF signals with an input impedance greater than ten times an input impedance of a testing tool; causing a probe assembly to connect to the signal port and the testing tool; and causing the probe assembly to connect to a first terminal of a resistive element having a resistance equal to the input impedance.

Abstract: A bias voltage generating circuit includes an amplifier circuit and a negative feedback circuit. The amplifier circuit is configured to generate a bias voltage according to a first voltage input and a second voltage input. The negative feedback circuit is coupled to the amplifier circuit, and configured to control the first voltage input. The negative feedback circuit includes a first voltage generator and a second voltage generator. The first voltage generator, coupled to the amplifier circuit, is biased by the bias voltage and configured to amplify a third voltage input to generate the first voltage input. The second voltage generator, coupled to the first voltage generator, is configured to generate the third voltage input. A ratio of the first voltage input to the third voltage input is locked according to a ratio of the second voltage input to the third voltage input.

Abstract: The present application discloses a radio frequency (RF) device. The radio frequency device includes a power amplifier, a power detector, and a digital signal processor (DSP). The power amplifier outputs a RF signal. The power detector receives the RF signal, and performs a plurality of calibration operations to generate a plurality of calibration voltages corresponding to a plurality of bias voltage, wherein the calibration operations are performed at the bias voltages respectively, and the calibration voltages are temperature-correlated due to that electrical characteristics of the power detector are temperature-correlated. The DSP controls the power detector to operate at the bias voltages, obtains an index voltage for indicating power of the RF signal by performing calculations upon the calibration voltages to reduce temperature dependency of the index voltage, and adjusts a gain of the power amplifier according to the index voltage.

Abstract: A method for manufacturing a first radio-frequency (RF) device, including: receiving a substrate having the first RF device, wherein the first RF device has a signal port for receiving or transmitting RF signals with an input impedance greater than ten times an input impedance of a testing tool; causing a probe assembly to connect to the signal port and the testing tool; and causing the probe assembly to connect to a first terminal of a resistive element having a resistance equal to the input impedance.

Abstract: A radio frequency (RF) transmitter includes a radiating element, a chip and a phase shifting circuit. The radiating element is arranged to receive a plurality of electrical signals to produce an RF output signal. The chip includes an amplifier circuit. The amplifier circuit is configured to amplify an RF input signal to generate a plurality of amplified signals at a plurality of output terminals, respectively. The phase shifting circuit is located outside the chip, and coupled to the output terminals and the radiating element. The phase shifting circuit is arranged to phase shift the amplified signals, and accordingly generate the electrical signals fed to the radiating element. The phase shifting circuit and the radiating element are formed on a same substrate.

Abstract: A radio frequency (RF) receiver includes a radiating element, a chip and a phase shifting circuit. The radiating element is arranged to receive an RF input signal to produce a plurality of electrical signals. The chip includes an amplifier circuit. The amplifier circuit is configured to receive a plurality of phase shifted signals from a plurality of input terminals respectively, and amplify the phase shifted signals to generate an RF output signal. The phase shifting circuit is located outside the chip, and coupled to the output terminals and the input terminals. The phase shifting circuit is arranged to phase shift the electrical signals and accordingly generate the phase shifted signals. The phase shifting circuit and the radiating element are formed on a same substrate.