Abstract: A method of training and applying contrastive learning model. The method includes obtaining a sample set and label information for training contrastive learning model, the sample set including a plurality of first samples of a first modality and a plurality of second samples of a second modality, the label information indicating a correlation between samples of the plurality of first samples and samples of the plurality of second samples; determining whether sample mixing is to be performed on the first modality or the second modality; in accordance with a determination that sample mixing is to be performed on the first modality, generating at least one first mixed sample of the first modality by mixing at least one pair of first samples among the plurality of first samples; and training the contrastive learning model at least based on the at least one first mixed sample and first mixed label information.

Abstract: An aeronautical aluminum alloy minimum-quantity-lubrication milling machining device includes a machine tool worktable and spindle connected with a machine tool power system. The spindle is connected with a tool holder that is fixed with a cutting tool. The machine tool worktable is provided with a machine tool fixture, the tool holder is connected with a minimum-quantity-lubrication mechanism, the machine tool fixture includes a fixture body that is fixedly provided with a limit block for contact with two adjacent side surfaces of a workpiece, the fixture body is provided with a plurality of clamping elements capable of pressing the workpiece against an upper surface of the fixture body, and a top of the clamping element is provided with a detection member for detecting a relative position between the clamping element and the spindle. The device can avoid interference and contact between a nozzle and the clamping element.

Abstract: A method of contrastive learning comprises: determining, based on a model construction criterion, a first encoder for a first modality and a second encoder for a second modality; constructing a first contrastive learning model, the first contrastive learning model comprising the first encoder and a third encoder for the second modality, and a model capacity of the third encoder being greater than a model capacity of the second encoder; performing pre-training of the first contrastive learning model based on a first training dataset for the first modality and the second modality; and providing the pre-trained first encoder in the pre-trained first contrastive learning model for a downstream task. Because only the model capacity of one encoder is increased in the pre-training stage, model performance may be improved without increasing model training overhead during downstream task fine-tuning and model running overhead during model application.

Abstract: Methods, apparatuses, a device, and a medium for training a contrastive learning model are provided. In a method, a plurality of sample sets for training the contrastive learning model are obtained, and the plurality of sample sets comprises a first sample set and a second sample set. A first target sample set is selected from the first sample set and the second sample set according to a predetermined rule. A first set of samples are determined based on the first target sample set according to a predefined batch size. The contrastive learning model is trained using the first set of samples. In this way, on the one hand, performance degradation of the contrastive learning model due to sample set bias may be avoided; on the other hand, a forgetting problem in the training process may be alleviated.

Abstract: A method for regulating an unmanned aerial vehicle (UAV) includes receiving a UAV identifier and one or more types of contextual information broadcasted by the UAV. The UAV identifier uniquely identifies the UAV from other UAVs. The one or more types of contextual information includes at least geographical information of the UAV. The method further includes authenticating, via an authentication device, an identity of the UAV based on the UAV identifier to determine whether the UAV is authorized for operation, and transmitting a signal to a remote device in response to determining whether the UAV is authorized for operation.

Abstract: A delivery guidewire (100), comprising: a core wire (110) comprising a first segment (111), a second segment (112) and a third segment (113), which are arranged in sequence and have diameters decreasing in the direction from a distal end to a proximal end of the delivery guidewire (100); a metal ring (130) at least partially disposed at a proximal end of the first segment (111); and a spring (120) at least partially disposed over the outer side of the second segment (112). A distal end of the spring (120) abuts against a proximal end of the metal ring (130), and a distal section of the spring (120) has a diameter smaller than a diameter of a proximal section thereof. The diameter of the distal section of the spring (120) that is smaller than the diameter of the proximal section of the spring (120) results in a smaller clearance between the distal section of the spring (120) and the core wire (110), which enables greater concentricity of the distal section of the spring (120) with the core wire (110).

Abstract: A method for manufacturing a vertical JFET includes providing a III-nitride substrate having a first conductivity type and forming a first III-nitride layer coupled to the III-nitride substrate. The first III-nitride layer is characterized by a first dopant concentration and the first conductivity type. The method also includes forming a plurality of trenches within the first III-nitride layer and epitaxially regrowing a second III-nitride structure in the trenches. The second III-nitride structure is characterized by a second conductivity type. The method further includes forming a plurality of III-nitride fins, each coupled to the first III-nitride layer, wherein the plurality of III-nitride fins are separated by one of a plurality of recess regions, and epitaxially regrowing a III-nitride gate layer in the recess regions. The III-nitride gate layer is coupled to the second III-nitride structure and the III-nitride gate layer is characterized by the second conductivity type.

Abstract: A portable lighting device includes a housing, a light source supported by the housing, and an alkaline battery positioned within the housing and coupled to the light source. The alkaline battery is configured to provide a drive current to the light source, and an intensity of the light source is dependent on the drive current. The portable lighting device also includes an electronic processor positioned within the housing and coupled to the light source and the alkaline battery. The electronic processor is configured to monitor a voltage of the alkaline battery, and execute a ramp-up algorithm to control the drive current based on the voltage of the alkaline battery.

Abstract: Disclosed are a zinc-based metal organic nanoparticle and a preparation method therefor, and a photoresist. The zinc-based metal organic nanoparticle has a core-shell structure, and the general formula is ZnxOy[A]2x[B]2, wherein x is 2 or 3, and 2x?y?4x, ZnxOy is a kernel of the core-shell structure, A is a first organic ligand, B is a second organic ligand, the first organic ligand A and the second organic ligand B together form an outer shell of the core-shell structure, the first organic ligand A is selected from one or more of a substituted or unsubstituted aliphatic group and a substituted or unsubstituted aromatic group, and the second organic ligand B is selected from one or more of an organic amine and a derivative thereof.

Abstract: A display panel is provided, including a grounding signal wiring, driving chips, a driving chip input output signal wiring, and a power line. A grounding signal pin is connected to the grounding signal wiring. The driving chip input output signal wiring is configured to connect a stage-transfer signal input pin and a stage-transfer signal output pin of two adjacent driving chips. The grounding signal wiring, the driving chip input output signal wiring, and the power line are disposed in a same layer and do not intersect with each other.

Abstract: This application provides techniques comprising creating a main thread and at least two task threads; determining, by the main thread, a target task thread based on a data packet corresponding to a data transmission task in response to detecting the data transmission task associated with a client device, and sending the data packet to the target task thread, where the target task thread is any one of the at least two task threads; and receiving, by the target task thread, the data packet sent by the main thread, determining, based on the data packet, a first file descriptor corresponding to the client device, and communicating with the client device by using the first file descriptor to perform data transmission.

Abstract: A portable lighting device includes a housing, a light source supported by the housing, and an alkaline battery positioned within the housing and coupled to the light source. The alkaline battery is configured to provide a drive current to the light source, and an intensity of the light source is dependent on the drive current. The portable lighting device also includes an electronic processor positioned within the housing and coupled to the light source and the alkaline battery. The electronic processor is configured to monitor a voltage of the alkaline battery, and execute a ramp-up algorithm to control the drive current based on the voltage of the alkaline battery.

Abstract: A method of fabricating a vertical fin-based field effect transistor (FET) includes providing a semiconductor substrate having a first surface and a second surface, the semiconductor substrate having a first conductivity type, epitaxially growing a first semiconductor layer on the first surface of the semiconductor substrate, the first semiconductor layer having the first conductivity type and including a drift layer and a graded doping layer on the drift layer, and epitaxially growing a second semiconductor layer having the first conductivity type on the graded doping layer. The method also includes forming a metal compound layer on the second semiconductor layer, forming a patterned hard mask layer on the metal compound layer, and etching the metal compound layer and the second semiconductor layer using the patterned hard mask layer as a mask exposing a surface of the graded doping layer to form a plurality of fins surrounded by a trench.

Abstract: A method for manufacturing a vertical JFET includes providing a III-nitride substrate having a first conductivity type and forming a first III-nitride layer coupled to the III-nitride substrate. The first III-nitride layer is characterized by a first dopant concentration and the first conductivity type. The method also includes forming a plurality of trenches within the first III-nitride layer and epitaxially regrowing a second III-nitride structure in the trenches. The second III-nitride structure is characterized by a second conductivity type. The method further includes forming a plurality of III-nitride fins, each coupled to the first III-nitride layer, wherein the plurality of III-nitride fins are separated by one of a plurality of recess regions, and epitaxially regrowing a III-nitride gate layer in the recess regions. The III-nitride gate layer is coupled to the second III-nitride structure and the III-nitride gate layer is characterized by the second conductivity type.

Abstract: Systems and methods are provided for calculating, using an electronic processor, an average environmental brightness and determining a current pulse width modulation (“PWM”) output level provided to the light source. The method also includes determining, using the electronic processor, a target illumination level and a PWM adjustment rate. The PWM adjustment rate is based at least partially on the calculated average environmental brightness. The method also includes adjusting, using the electronic processor, the current PWM output level at the determined PWM adjustment rate to reach the target illumination level, and transmitting the adjusted PWM output level to the light source. The target illumination level is determined as a function of the current PWM output level and an output mode of the light source.

Abstract: A method of fabricating a vertical fin-based field effect transistor (FET) includes providing a semiconductor substrate having a first surface and a second surface, the semiconductor substrate having a first conductivity type, epitaxially growing a first semiconductor layer on the first surface of the semiconductor substrate, the first semiconductor layer having the first conductivity type and including a drift layer and a graded doping layer on the drift layer, and epitaxially growing a second semiconductor layer having the first conductivity type on the graded doping layer. The method also includes forming a metal compound layer on the second semiconductor layer, forming a patterned hard mask layer on the metal compound layer, and etching the metal compound layer and the second semiconductor layer using the patterned hard mask layer as a mask exposing a surface of the graded doping layer to form a plurality of fins surrounded by a trench.

Abstract: A portable lighting device includes a housing, a light source supported by the housing, and an alkaline battery positioned within the housing and coupled to the light source. The alkaline battery is configured to provide a drive current to the light source, and an intensity of the light source is dependent on the drive current. The portable lighting device also includes an electronic processor positioned within the housing and coupled to the light source and the alkaline battery. The electronic processor is configured to monitor a voltage of the alkaline battery, and execute a ramp-up algorithm to control the drive current based on the voltage of the alkaline battery.

Abstract: A method for manufacturing a vertical JFET includes providing a III-nitride substrate having a first conductivity type and forming a first III-nitride layer coupled to the III-nitride substrate. The first III-nitride layer is characterized by a first dopant concentration and the first conductivity type. The method also includes forming a plurality of trenches within the first III-nitride layer and epitaxially regrowing a second III-nitride structure in the trenches. The second III-nitride structure is characterized by a second conductivity type. The method further includes forming a plurality of III-nitride fins, each coupled to the first III-nitride layer, wherein the plurality of III-nitride fins are separated by one of a plurality of recess regions, and epitaxially regrowing a III-nitride gate layer in the recess regions. The III-nitride gate layer is coupled to the second III-nitride structure and the III-nitride gate layer is characterized by the second conductivity type.

Abstract: A portable lighting device includes a housing, a light source supported by the housing, and an alkaline battery positioned within the housing and coupled to the light source. The alkaline battery is configured to provide a drive current to the light source, and an intensity of the light source is dependent on the drive current. The portable lighting device also includes an electronic processor positioned within the housing and coupled to the light source and the alkaline battery. The electronic processor is configured to monitor a voltage of the alkaline battery, and execute a ramp-up algorithm to control the drive current based on the voltage of the alkaline battery.

Abstract: A method for manufacturing a vertical JFET includes providing a III-nitride substrate having a first conductivity type; forming a first III-nitride layer coupled to the III-nitride substrate, wherein the first III-nitride layer is characterized by a first dopant concentration and the first conductivity type; forming a plurality of trenches within the first III-nitride layer, wherein the plurality of trenches extend to a predetermined depth; epitaxially regrowing a second III-nitride structure in the trenches, wherein the second III-nitride structure is characterized by a second conductivity type; forming a plurality of III-nitride fins, each coupled to the first III-nitride layer, wherein the plurality of III-nitride fins are separated by one of a plurality of recess regions; epitaxially regrowing a III-nitride gate layer in the recess regions, wherein the III-nitride gate layer is coupled to the second III-nitride structure, and wherein the III-nitride gate layer is characterized by the second conductivity t