Abstract: The present disclosure provides a display substrate, a manufacturing method thereof and a display apparatus, and relates to the field of display technology. The manufacturing method of a display substrate includes providing a base substrate, and forming pixels on the base substrate, wherein the forming pixels includes: forming a first auxiliary electrode on the base substrate; forming a first interlayer insulating layer on a side of the first auxiliary electrode away from the base substrate; sequentially forming a second conductive film and a first photoresist layer, exposing the first photoresist layer with a mask plate having regions of different light transmittances by controlling exposure time based on requirements on an operating frequency band of the pixels, to form a source electrode and a drain electrode of the thin film transistor and a second auxiliary electrode, forming a second interlayer insulating layer; and forming a pixel electrode.

Abstract: The present disclosure generally relates to systems and methods for searching media content. In some implementation examples, a search system receives an input query, generates a query embedding of the input query, and generates a bias mitigation transformation associated with a sensitive attribute. Based on the query embedding and the bias mitigation transformation, the search system generates a transformed query embedding that suppresses at least a portion of the query embedding related to the sensitive attribute. Using the transformed query embedding, the search system executes a similarity search in a media embedding model to identify one or more media embeddings that are similar to the transformed query embedding and transmits the one or more media embeddings.

Abstract: An electrochemical device includes a housing, a first sealing ring, and an electrode post. The housing includes a cover provided with a through-hole. The cover includes a first wall surface and a second wall surface. The first sealing ring includes a first annular surface and a second annular surface. The first annular surface connects to the first wall surface. The first sealing ring is disposed around a hole axis of the through-hole. The electrode post includes a first part and a second part. The first part is inserted into the through-hole. The second part is connected to an end portion of the first part, the end portion being located in the inner cavity of the housing. A third annular surface includes a first region connected to the second annular surface. The first region includes a first edge and a second edge.

Abstract: The present disclosure provides a superconducting qubit. The superconducting qubit includes: a Josephson junction and a non-Josephson junction area, wherein the non-Josephson junction area includes a first layer of superconducting material, the first layer of superconducting material being superconducting material deposited on the non-Josephson junction area before ion milling on the Josephson junction and the non-Josephson junction area during preparation of the superconducting qubit.

Abstract: The present application describes a polycyclic compound represented by general formula (I) as a Cbl-b inhibitor, or a stereoisomer or pharmaceutically acceptable salt thereof, a pharmaceutical composition comprising the compound of general formula (I) or the stereoisomer or pharmaceutically acceptable salt thereof, and a use of the compound of general formula (I) or the stereoisomer or pharmaceutically acceptable salt thereof, or the pharmaceutical composition in the prevention or treatment of diseases or conditions mediated by Cbl-b.

Abstract: The present disclosure provides an electronic paper display module, including an array substrate and an electronic paper film arranged opposite to each other. The electronic paper film includes a common electrode, the array substrate includes a display region and a peripheral region, and a common electrode lead is located at the peripheral region. An orthogonal projection of the electronic paper film onto the array substrate at least covers the display region, and the common electrode lead is provided with a hollowed-out region.

Abstract: An optical sensing device includes a first sensor, a second sensor, a third sensor and a fourth sensor for sensing light to generate a first sensing signal, a second sensing signal, a third sensing signal and a fourth sensing signal, respectively. A spectrum of a coating of the first sensor includes a first peak of a X spectrum. A spectrum of a coating of the second sensor includes a second peak of the X spectrum. A spectrum of a coating of the third sensor includes a Y spectrum. A spectrum of a coating of the fourth sensor includes a Z spectrum. The first sensing signal and the second sensing signal are used to determine a X output value. The third sensing signal and the fourth sensing signal are used to determine a Y output value and a Z output value, respectively.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: Provided is a display device. The display device includes a bending adhesive layer, a backlight module and a display module; the backlight module and the display module are connected through the bending adhesive layer; an air flow passage is disposed between the display module and the bending adhesive layer, and a pressure zone exists between the backlight module and the bending adhesive layer; the air flow passage is configured to discharge a bubble existed in the pressure zone.

Abstract: A soft-bodied apparatus and a method for opening an eyelid are provided. The apparatus includes: a head support module, a real-time eyelid positioning module, a robot end-effector real-time positioning module, and an automatic eyelid opening operation module. The automatic eyelid opening operation module includes a robot body and a robot control system. The robot body is provided with a multi-axis rigid body mechanical arm and a soft-bodied end-effector. The robot control system takes the real-time poses of the upper and lower eyelids of the user as a motion target, and takes the real-time shape and the pose of the soft-bodied end-effector as feedback information to control motion of the robot body to automatically open the eyelid.

Abstract: Provided are a crucible combination and a thermal field assembly. The crucible combination includes a susceptor holder; a susceptor body disposed on the susceptor holder, the susceptor body comprises a crucible installation cavity that gradually increases from the susceptor holder in a direction departing from the susceptor holder; and a crucible disposed in the crucible installation cavity, an outer surface of the crucible is an outer surface that gradually increases from the susceptor holder in the direction departing from the susceptor holder, the outer surface and an inner surface of the crucible installation cavity are arranged oppositely, and a softening temperature of the susceptor body is greater than the softening temperature of the crucible.

Abstract: A conductive adhesive film is disclosed. The conductive adhesive film includes a first film layer and a conductive particle layer. The first film layer has a plurality of electrode contact regions and a non-contact region separating the plurality of electrode contact regions. The first film layer has a plurality of gap structures, and the plurality of gap structures are located at least in the non-contact region. The conductive particle layer is located on a side of the first film layer. The conductive particle layer includes conductive particles. An orthographic projection of the conductive particles on the first film layer overlaps with at least a portion of each electrode contact region.

Abstract: The present disclosure discloses a method for treating a tantalum metal thin film, a quantum device, and a quantum chip. The method includes: preparing an initial tantalum metal thin film; and increasing, after cooling the initial tantalum metal thin film to a predetermined extremely low temperature, the temperature from the predetermined extremely low temperature to normal temperature to obtain a target tantalum metal thin film. The present disclosure solves the technical problem in the related technology: a post-treatment technology for a tantalum metal thin film after preparation of the tantalum metal thin film has a limited positive effect on reducing the energy dissipation of a tantalum-based superconducting quantum device.

Abstract: A stroboscopic stepped illumination defect detection system for appearance defect detection of a product is provided. The system includes an image extraction unit, a brightness adjustment unit, a data processing unit, and a stroboscopic control unit. The image extraction unit is connected to the stroboscopic control unit and used for obtaining stable and clear images in various transmission/reflection visual bright fields/dark fields; and the brightness adjustment unit is connected to the stroboscopic control unit and used for setting various transmission/reflection visual bright fields/dark fields and converting in the various transmission/reflection visual bright fields/dark fields.

Abstract: The present disclosure discloses a device and a method for fabricating a superconducting circuit including a superconducting qubit. The superconducting circuit comprises a bottom electrode interconnecting a superconducting qubit and a first part of the superconducting circuit. The bottom electrode comprises a bottom electrode of the superconducting qubit and a bottom electrode of the first part of the superconducting circuit. The bottom electrode of the superconducting qubit and the bottom electrode of the first part of the superconducting circuit are formed in a first superconducting layer.

Abstract: A crystal-pulling method for pulling monocrystalline silicon, wherein the crystal-pulling method comprises that a furnace pressure of a monocrystal furnace in an equal-diameter stage of growth of a crystal does not exceed 18 Torr, a flow rate of argon gas introduced into the monocrystal furnace is kept in a constant range, and the monocrystalline silicon is doped with a dopant, so as to achieve equal-diameter crystal pulling under a low furnace pressure. By means of the process, the axial resistivity degradation slope of the monocrystal doped with the volatile dopant, especially gallium, can be reduced, and the length thereof with effective resistivity can be increased.

Abstract: A method for adjusting a resonant cavity includes: acquiring a construction parameter of a coplanar waveguide; determining, based on the construction parameter, an equivalent inductance of the coplanar waveguide, in which the equivalent inductance is a superposition of geometric inductance and kinetic inductance, and the equivalent inductance represents current density distribution on a metal surface of the coplanar waveguide; determining, based on the equivalent inductance, a resonance frequency of the resonant cavity formed by the coplanar waveguide, in which the resonance frequency is an analytical function with the construction parameter of the coplanar waveguide as a variable; and adjusting the resonance frequency of the resonant cavity to a target resonance frequency by adjusting a value of the construction parameter of the coplanar waveguide.

Abstract: The present disclosure discloses a device and a method for fabricating a superconducting circuit including a superconducting qubit. The superconducting circuit comprises a bottom electrode interconnecting a superconducting qubit and a first part of the superconducting circuit. The bottom electrode comprises a bottom electrode of the superconducting qubit and a bottom electrode of the first part of the superconducting circuit. The bottom electrode of the superconducting qubit and the bottom electrode of the first part of the superconducting circuit are formed in a first superconducting layer.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: A method for preparing the double-sided composite thinning zoom concave lens, includes steps of: S1: establishing the a front surface mathematical model and a back surface mathematical model in an optical software; S2: establishing an evaluation function comprising an optimized value of astigmatism and an edge thickness of the lens; and S3: inputting a structural parameters of the lens blank and the prescription power, optimizing one by one using the least square method according to the evaluation function to obtain data of a front surface and a rear surface of the lens.