Abstract: The present disclosure provides a display panel and a method for manufacturing the display panel. The display panel includes a display array, a chip and a circuit board. The array substrate includes a display portion and a transition portion, a bending portion and a first bonding portion which are connected in sequence at an end of the display portion. The first bonding portion is bent through the bending portion to a side of the transition portion in a second direction Y. The circuit board includes a body portion and a second bonding portion. A second bonding electrode of the second bonding portion is connected to the first bonding electrode. The first bonding portion has a sticking-out portion at an end of the first bonding electrode connected to the second bonding electrode. The sticking-out portion extends along the first direction X.

Abstract: The present disclosure provides a superconducting qubit. The superconducting qubit includes: a Josephson junction and a non-Josephson junction area, wherein the non-Josephson junction area includes a first layer of superconducting material, the first layer of superconducting material being superconducting material deposited on the non-Josephson junction area before ion milling on the Josephson junction and the non-Josephson junction area during preparation of the superconducting qubit.

Abstract: An optical sensing device includes a first sensor, a second sensor, a third sensor and a fourth sensor for sensing light to generate a first sensing signal, a second sensing signal, a third sensing signal and a fourth sensing signal, respectively. A spectrum of a coating of the first sensor includes a first peak of a X spectrum. A spectrum of a coating of the second sensor includes a second peak of the X spectrum. A spectrum of a coating of the third sensor includes a Y spectrum. A spectrum of a coating of the fourth sensor includes a Z spectrum. The first sensing signal and the second sensing signal are used to determine a X output value. The third sensing signal and the fourth sensing signal are used to determine a Y output value and a Z output value, respectively.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: Provided is a display device. The display device includes a bending adhesive layer, a backlight module and a display module; the backlight module and the display module are connected through the bending adhesive layer; an air flow passage is disposed between the display module and the bending adhesive layer, and a pressure zone exists between the backlight module and the bending adhesive layer; the air flow passage is configured to discharge a bubble existed in the pressure zone.

Abstract: A soft-bodied apparatus and a method for opening an eyelid are provided. The apparatus includes: a head support module, a real-time eyelid positioning module, a robot end-effector real-time positioning module, and an automatic eyelid opening operation module. The automatic eyelid opening operation module includes a robot body and a robot control system. The robot body is provided with a multi-axis rigid body mechanical arm and a soft-bodied end-effector. The robot control system takes the real-time poses of the upper and lower eyelids of the user as a motion target, and takes the real-time shape and the pose of the soft-bodied end-effector as feedback information to control motion of the robot body to automatically open the eyelid.

Abstract: Provided are a crucible combination and a thermal field assembly. The crucible combination includes a susceptor holder; a susceptor body disposed on the susceptor holder, the susceptor body comprises a crucible installation cavity that gradually increases from the susceptor holder in a direction departing from the susceptor holder; and a crucible disposed in the crucible installation cavity, an outer surface of the crucible is an outer surface that gradually increases from the susceptor holder in the direction departing from the susceptor holder, the outer surface and an inner surface of the crucible installation cavity are arranged oppositely, and a softening temperature of the susceptor body is greater than the softening temperature of the crucible.

Abstract: A conductive adhesive film is disclosed. The conductive adhesive film includes a first film layer and a conductive particle layer. The first film layer has a plurality of electrode contact regions and a non-contact region separating the plurality of electrode contact regions. The first film layer has a plurality of gap structures, and the plurality of gap structures are located at least in the non-contact region. The conductive particle layer is located on a side of the first film layer. The conductive particle layer includes conductive particles. An orthographic projection of the conductive particles on the first film layer overlaps with at least a portion of each electrode contact region.

Abstract: The present disclosure discloses a method for treating a tantalum metal thin film, a quantum device, and a quantum chip. The method includes: preparing an initial tantalum metal thin film; and increasing, after cooling the initial tantalum metal thin film to a predetermined extremely low temperature, the temperature from the predetermined extremely low temperature to normal temperature to obtain a target tantalum metal thin film. The present disclosure solves the technical problem in the related technology: a post-treatment technology for a tantalum metal thin film after preparation of the tantalum metal thin film has a limited positive effect on reducing the energy dissipation of a tantalum-based superconducting quantum device.

Abstract: A stroboscopic stepped illumination defect detection system for appearance defect detection of a product is provided. The system includes an image extraction unit, a brightness adjustment unit, a data processing unit, and a stroboscopic control unit. The image extraction unit is connected to the stroboscopic control unit and used for obtaining stable and clear images in various transmission/reflection visual bright fields/dark fields; and the brightness adjustment unit is connected to the stroboscopic control unit and used for setting various transmission/reflection visual bright fields/dark fields and converting in the various transmission/reflection visual bright fields/dark fields.

Abstract: A crystal-pulling method for pulling monocrystalline silicon, wherein the crystal-pulling method comprises that a furnace pressure of a monocrystal furnace in an equal-diameter stage of growth of a crystal does not exceed 18 Torr, a flow rate of argon gas introduced into the monocrystal furnace is kept in a constant range, and the monocrystalline silicon is doped with a dopant, so as to achieve equal-diameter crystal pulling under a low furnace pressure. By means of the process, the axial resistivity degradation slope of the monocrystal doped with the volatile dopant, especially gallium, can be reduced, and the length thereof with effective resistivity can be increased.

Abstract: The present disclosure discloses a device and a method for fabricating a superconducting circuit including a superconducting qubit. The superconducting circuit comprises a bottom electrode interconnecting a superconducting qubit and a first part of the superconducting circuit. The bottom electrode comprises a bottom electrode of the superconducting qubit and a bottom electrode of the first part of the superconducting circuit. The bottom electrode of the superconducting qubit and the bottom electrode of the first part of the superconducting circuit are formed in a first superconducting layer.

Abstract: A method for adjusting a resonant cavity includes: acquiring a construction parameter of a coplanar waveguide; determining, based on the construction parameter, an equivalent inductance of the coplanar waveguide, in which the equivalent inductance is a superposition of geometric inductance and kinetic inductance, and the equivalent inductance represents current density distribution on a metal surface of the coplanar waveguide; determining, based on the equivalent inductance, a resonance frequency of the resonant cavity formed by the coplanar waveguide, in which the resonance frequency is an analytical function with the construction parameter of the coplanar waveguide as a variable; and adjusting the resonance frequency of the resonant cavity to a target resonance frequency by adjusting a value of the construction parameter of the coplanar waveguide.

Abstract: The present disclosure discloses a device and a method for fabricating a superconducting circuit including a superconducting qubit. The superconducting circuit comprises a bottom electrode interconnecting a superconducting qubit and a first part of the superconducting circuit. The bottom electrode comprises a bottom electrode of the superconducting qubit and a bottom electrode of the first part of the superconducting circuit. The bottom electrode of the superconducting qubit and the bottom electrode of the first part of the superconducting circuit are formed in a first superconducting layer.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: A method for preparing the double-sided composite thinning zoom concave lens, includes steps of: S1: establishing the a front surface mathematical model and a back surface mathematical model in an optical software; S2: establishing an evaluation function comprising an optimized value of astigmatism and an edge thickness of the lens; and S3: inputting a structural parameters of the lens blank and the prescription power, optimizing one by one using the least square method according to the evaluation function to obtain data of a front surface and a rear surface of the lens.

Abstract: An optical sensing device includes a first sensor, a second sensor, a third sensor and a fourth sensor for sensing light to generate a first sensing signal, a second sensing signal, a third sensing signal and a fourth sensing signal, respectively. A spectrum of a coating of the first sensor includes a first peak of a X spectrum. A spectrum of a coating of the second sensor includes a second peak of the X spectrum. A spectrum of a coating of the third sensor includes a Y spectrum. A spectrum of a coating of the fourth sensor includes a Z spectrum. The first sensing signal and the second sensing signal are used to determine a X output value. The third sensing signal and the fourth sensing signal are used to determine a Y output value and a Z output value, respectively.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: A sunk-type package structure includes a substrate, an optical sensing chip, and a housing. The substrate has a cavity with a first depth. The optical sensing chip is disposed inside the cavity and electrically connected with the substrate. A surface of the optical sensing chip has a first sensing area for sensing light. The housing covers the substrate and the optical sensing chip. The housing has a light-permeable portion disposed above the first sensing area.

Abstract: A heat exchanging device includes: an inner wall and an outer wall, wherein the inner wall is close to the center axis of the heat exchanging device. The inner wall and the outer wall together form a chamber for a cooling medium to flow. The inner wall is provided with at least one protrusion component having an internal cavity. The protruding direction of the protrusion component faces the center axis. The internal cavity of the protrusion component is in communication with the chamber formed by the inner wall and the outer wall. The protruding direction of the protrusion component faces the crystal bar, and the internal cavity of the protrusion component is in communication with the chamber formed by the inner wall and the outer wall, which increases the heat exchanging area, and reduces the horizontal distance between the cooling medium and the crystal bar.