Patents by Inventor Hao-Hsiang Yang

Hao-Hsiang Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10713521
    Abstract: An image capturing apparatus including a substrate, a light source, a sensor, a light shielding element, a first reflective element, and a transparent colloid curing layer is provided. The light source, the sensor, the light shielding element, the first reflective element, and the transparent colloid curing layer are disposed on the substrate. The sensor is located next to the light source. The light shielding element is located between the light source and the sensor. The first reflective element is located between the light shielding element and the sensor. The transparent colloid curing layer covers the light source, the sensor, the light shielding element, and the first reflective element. A manufacturing method of the image capturing apparatus is also provided.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: July 14, 2020
    Assignee: Gingy Technology Inc.
    Inventors: Kuo-Liang You, Kuo-Wen Yang, Cheng-Jyun Huang, Yu-Cheng Chiu, Hao-Hsiang Chang, Chih-Chiang Yu
  • Publication number: 20200198145
    Abstract: This disclosure is related to a non-contact tool center point calibration method for a robot arm, and the method comprises: obtaining a coordinate transformation relationship between a flange surface of the robot arm and cameras by a hand-eye calibration algorithm; constructing a space coordinate system by a stereoscopic reconstruction method; actuating a replaceable member fixed with the flange surface to present postures in a union field of view of the cameras sequentially, recording feature coordinates of the replaceable member in the space coordinate system, and recording flange surface coordinates which is under the postures in the space coordinate system; obtaining a transformation relationship between a tool center point and the flange surface; and updating the transformation relationship into a control program of the robot arm. Moreover, the disclosure further discloses a calibration device performing the calibration method and a robot arm system having the calibration function.
    Type: Application
    Filed: December 26, 2018
    Publication date: June 25, 2020
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Sheng Chieh HSU, Hao Hsiang YANG, Shu HUANG, Yan Yi DU
  • Patent number: 10629734
    Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: April 21, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kai-Lin Lee, Zhi-Cheng Lee, Wei-Jen Chen, Ting-Hsuan Kang, Ren-Yu He, Hung-Wen Huang, Chi-Hsiao Chen, Hao-Hsiang Yang, An-Shih Shih, Chuang-Han Hsieh
  • Patent number: 10355679
    Abstract: A display driving circuit, a calibration module, and an associated calibration method are provided. The display driving circuit includes an internal clock circuit and the calibration module. The internal clock circuit generates an internal clock signal. The calibration module includes a counting circuit and a trimming circuit. The counting circuit counts pulses of a reference clock signal to generate a detected reference-clock count and counts pulses of the internal clock signal to generate a detected internal-clock count. The trimming circuit generates a calibration signal to adjust frequency of the internal clock signal when a predefined condition is satisfied. The predefined condition is related to comparison between a first preset count and one of the detected reference-clock count and the detected internal-clock count.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: July 16, 2019
    Assignee: NOVATEK MICROELECTRONICS CORP.
    Inventors: Chien-Chuan Huang, Chia-Hsin Tung, Chun-Hung Chen, Hao-Jan Yang, Chieh-Hsiang Chang
  • Publication number: 20190172949
    Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.
    Type: Application
    Filed: January 18, 2019
    Publication date: June 6, 2019
    Inventors: Kai-Lin Lee, Zhi-Cheng Lee, Wei-Jen Chen, Ting-Hsuan Kang, Ren-Yu He, Hung-Wen Huang, Chi-Hsiao Chen, Hao-Hsiang Yang, An-Shih Shih, Chuang-Han Hsieh
  • Publication number: 20190173457
    Abstract: A display driving circuit, a calibration module, and an associated calibration method are provided. The display driving circuit includes an internal clock circuit and the calibration module. The internal clock circuit generates an internal clock signal. The calibration module includes a counting circuit and a trimming circuit. The counting circuit counts pulses of a reference clock signal to generate a detected reference-clock count and counts pulses of the internal clock signal to generate a detected internal-clock count. The trimming circuit generates a calibration signal to adjust frequency of the internal clock signal when a predefined condition is satisfied. The predefined condition is related to comparison between a first preset count and one of the detected reference-clock count and the detected internal-clock count.
    Type: Application
    Filed: December 1, 2017
    Publication date: June 6, 2019
    Inventors: Chien-Chuan Huang, Chia-Hsin Tung, Chun-Hung Chen, Hao-Jan Yang, Chieh-Hsiang Chang
  • Patent number: 10229995
    Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: March 12, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kai-Lin Lee, Zhi-Cheng Lee, Wei-Jen Chen, Ting-Hsuan Kang, Ren-Yu He, Hung-Wen Huang, Chi-Hsiao Chen, Hao-Hsiang Yang, An-Shih Shih, Chuang-Han Hsieh
  • Publication number: 20190027602
    Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.
    Type: Application
    Filed: August 4, 2017
    Publication date: January 24, 2019
    Inventors: Kai-Lin Lee, Zhi-Cheng Lee, Wei-Jen Chen, Ting-Hsuan Kang, Ren-Yu He, Hung-Wen Huang, Chi-Hsiao Chen, Hao-Hsiang Yang, An-Shih Shih, Chuang-Han Hsieh
  • Publication number: 20180358453
    Abstract: The present invention provides a method of making a tunneling effect transistor (TFET), the method includes: a substrate is provided, having a fin structure disposed thereon, the fin structure includes a first conductive type, a dielectric layer is then formed on the substrate and on the fin structure, a gate trench is formed in the dielectric layer, and a first work function metal layer is formed in the gate trench, the first work function metal layer defines at least a left portion, a right portion and a central portion, an etching process is performed to remove the central portion of the first work function metal layer, and to form a recess between the left portion and the right portion of the first work function metal layer, afterwards, a second work function metal layer is formed and filled in the recess.
    Type: Application
    Filed: July 6, 2017
    Publication date: December 13, 2018
    Inventors: Hung-Wen Huang, Kai-Lin Lee, Ren-Yu He, Chi-Hsiao Chen, Ting-Hsuan Kang, Hao-Hsiang Yang, An-Shih Shih, Chuang-Han Hsieh