Abstract: An antenna module includes a first metal plate and a frame body. The frame body surrounds the first metal plate. The frame body includes a first antenna radiator, a second antenna radiator, a third antenna radiator, a first breakpoint and a second breakpoint. The first antenna radiator includes a first feeding end and excites a first frequency band. The second antenna radiator includes a second feeding end and excites a second frequency band. The third antenna radiator includes a third feeding end and excites a third frequency band. The first breakpoint is located between the first antenna radiator and the second antenna radiator. The second breakpoint is located between the second antenna radiator and the third antenna radiator. An electronic device including the above-mentioned antenna module is also provided.

Abstract: An electronic device including a bracket and an antenna is provided. The bracket includes first, second, third, and fourth surfaces. The antenna includes a radiator. The radiator includes first, second, third, and fourth portions. The first portion is located on the first surface and includes connected first and second sections. The second portion is located on the second surface and includes third, fourth, fifth, and sixth sections. The third section, the fourth section, and the fifth sections are bent and connected to form a U shape. The third portion is located on the third surface and is connected to the second section and the fourth section. The fourth portion is located on the fourth surface and is connected to the fifth section, the sixth section, and the third portion. The radiator is adapted to resonate at a low frequency band and a first high frequency band.

Abstract: An electronic device includes a casing, a circuit board and at least one antenna module. The casing has an accommodating space and an inner side wall surrounding the accommodating space. The circuit board is disposed in the accommodating space. Each of the antenna modules includes a first radiator and a second radiator. The first radiator is disposed on the circuit board and adjacent to the inner side wall, and includes a first section, a second section and a third section extending from the first section in opposite directions respectively. The first section includes a feeding end, and the third section includes a grounding end. The second radiator is disposed on the inner side wall. A coupling gap is formed between the first radiator and the second radiator.

Abstract: An electronic device including a metal bottom plate, a metal frame and at least one radiator is provided. The metal bottom plate includes at least one ground terminal. The metal frame includes at least one slot, at least one disconnecting part, at least one first connecting part and at least one second connecting part. The disconnecting part includes a first part and a second part. Each radiator includes a first terminal and a second terminal. The second terminal is connected to a junction between the first part and the second part. The first terminal, the second terminal, the first part, the first connecting part and the ground terminal form a first antenna path radiating at a first frequency band. The first terminal, the second terminal, the second part, the second connecting part and the ground terminal form a second antenna path radiating at a second frequency band.

Abstract: An antenna module includes two antenna units, two isolation members, and a grounding member. Each antenna unit consists of two feeding ends. two first radiators, and two second. radiators. The isolating members are disposed between the first and second portions of each antenna unit. The grounding member is disposed beside the two antenna units and the two isolation members. A first slot is formed among each first radiator, the second radiator, and the grounding member. The two second radiators are connected to the third radiator. A third slot is formed between the second radiator and the second portion. The two antenna units are symmetric to the fourth slot in a mirrored manner, and the two first portions have widths gradually changing along an extending direction of the fourth position.

Abstract: An electronic device, including a metal back cover, a front cover, a metal wall, and at least one antenna radiator, is provided. The front cover covers the metal back cover and includes a frame area. The metal wall is disposed between the metal back cover and the front cover, and forms a metal cavity corresponding to the frame area together with the metal back cover. Each of the at least one antenna radiator is disposed in the metal cavity, is connected to a first side wall of the metal back cover, and is spaced apart from the metal wall by a distance.

Abstract: An electronic device includes a casing, a circuit board and at least one antenna module. The casing has an accommodating space and an inner side wall surrounding the accommodating space. The circuit board is disposed in the accommodating space. Each of the antenna modules includes a first radiator and a second radiator. The first radiator is disposed on the circuit board and adjacent to the inner side wall, and includes a first section, a second section and a third section extending from the first section in opposite directions respectively. The first section includes a feeding end, and the third section includes a grounding end. The second radiator is disposed on the inner side wall. A coupling gap is formed between the first radiator and the second radiator.

Abstract: This disclosure is related to a non-contact tool center point calibration method for a robot arm, and the method comprises: obtaining a coordinate transformation relationship between a flange surface of the robot arm and cameras by a hand-eye calibration algorithm; constructing a space coordinate system by a stereoscopic reconstruction method; actuating a replaceable member fixed with the flange surface to present postures in a union field of view of the cameras sequentially, recording feature coordinates of the replaceable member in the space coordinate system, and recording flange surface coordinates which is under the postures in the space coordinate system; obtaining a transformation relationship between a tool center point and the flange surface; and updating the transformation relationship into a control program of the robot arm. Moreover, the disclosure further discloses a calibration device performing the calibration method and a robot arm system having the calibration function.

Abstract: This disclosure is related to a non-contact tool center point calibration method for a robot arm, and the method comprises: obtaining a coordinate transformation relationship between a flange surface of the robot arm and cameras by a hand-eye calibration algorithm; constructing a space coordinate system by a stereoscopic reconstruction method; actuating a replaceable member fixed with the flange surface to present postures in a union field of view of the cameras sequentially, recording feature coordinates of the replaceable member in the space coordinate system, and recording flange surface coordinates which is under the postures in the space coordinate system; obtaining a transformation relationship between a tool center point and the flange surface; and updating the transformation relationship into a control program of the robot arm. Moreover, the disclosure further discloses a calibration device performing the calibration method and a robot arm system having the calibration function.

Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.

Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.

Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.

Abstract: A method of fabricating a fin structure with tensile stress includes providing a structure divided into an N-type transistor region and a P-type transistor region. Next, two first trenches and two second trenches are formed in the substrate. The first trenches define a fin structure. The second trenches segment the first trenches and the fin. Later, a flowable chemical vapor deposition is performed to form a silicon oxide layer filling the first trenches and the second trenches. Then, a patterned mask is formed only within the N-type transistor region. The patterned mask only covers the silicon oxide layer in the second trenches. Subsequently, part of the silicon oxide layer is removed to make the exposed silicon oxide layer lower than the top surface of the fin structure by taking the patterned mask as a mask. Finally, the patterned mask is removed.

Abstract: The present invention provides a method of making a tunneling effect transistor (TFET), the method includes: a substrate is provided, having a fin structure disposed thereon, the fin structure includes a first conductive type, a dielectric layer is then formed on the substrate and on the fin structure, a gate trench is formed in the dielectric layer, and a first work function metal layer is formed in the gate trench, the first work function metal layer defines at least a left portion, a right portion and a central portion, an etching process is performed to remove the central portion of the first work function metal layer, and to form a recess between the left portion and the right portion of the first work function metal layer, afterwards, a second work function metal layer is formed and filled in the recess.