Abstract: A method for performing wireless communication in MLO architecture is applicable to an AP MLD connected with a non-AP MLD through multiple links. The multiple links include at least a first link and a second link, the non-AP MLD operates in ML-SMPS mode. The method includes transmitting an initial control frame to the non-AP MLD via the first link, to trigger at least one link of the multiple links to be activated at the non-AP MLD to support a reception with respective negotiated number of spatial streams, receiving a response frame via the first link in response to the transmission of the initial control frame, and initiating frame exchange between the AP MLD and the non-AP MLD via a target link of the at least one link. The target link is selected from the at least one link according to the response frame. The first link is a primary link.

Abstract: A method for multi-link operation (MLO) is provided. The method for MLO may be applied to an apparatus. The method for MLO may include the following steps. A multi-chip controller of the apparatus may assign different data to a plurality of chips of the apparatus, wherein each chip corresponds to one link of multi-links. Each chip may determine whether transmission of the assigned data has failed. A first chip of the chips may transmit the assigned data to an access point (AP) in response to the first chip determining that the transmission of the assigned data has not failed.

Abstract: A multi-link operation (MLO) transmission method is provided. The MLO transmission method may be applied to an apparatus. The MLO transmission method may include the following steps. A plurality of station (STA) modules of the apparatus may each perform a respective backoff procedure. Each STA module may correspond to a different link. An MLO control circuit of the apparatus or a first STA module of the plurality of STA modules may determine whether to perform a synchronous transmission (TX) for a first STA module and at least one of other STA modules in response to a first backoff counter of the first STA module reaching 0.

Abstract: A semiconductor structure includes a die embedded in a molding material, the die having die connectors on a first side; a first redistribution structure at the first side of the die, the first redistribution structure being electrically coupled to the die through the die connectors; a second redistribution structure at a second side of the die opposing the first side; and a thermally conductive material in the second redistribution structure, the die being interposed between the thermally conductive material and the first redistribution structure, the thermally conductive material extending through the second redistribution structure, and the thermally conductive material being electrically isolated.

Abstract: A medical decision supporting apparatus according to an embodiment may include a visual and linguistic neural learner, which receives a medical image and extracts visual embedding, a cause miner, which extracts a predetermined index based on the visual embedding and pretrained embedding, and outputs a predetermined cause for the medical image based on a hash map including at least one index-concept pair and the extracted predetermined index, a logical reasoner, which generates a medical report based on the visual embedding, a background knowledge graph, and the predetermined cause, and a proof inference unit, which generates an answer including a proof for a user's question about the medical image based on the predetermined cause and the medical report.

Abstract: A method includes forming a dielectric layer over a contact pad of a device, forming a first polymer layer over the dielectric layer, forming a first conductive line and a first portion of a second conductive line over the first polymer layer, patterning a photoresist to form an opening over the first portion of the second conductive feature, wherein after patterning the photoresist the first conductive line remains covered by photoresist, forming a second portion of the second conductive line in the opening, wherein the second portion of the second conductive line physically contacts the first portion of the second conductive line, and forming a second polymer layer extending completely over the first conductive line and the second portion of the second conductive line.

Abstract: A package structure including a photonic, an electronic die, an encapsulant and a waveguide is provided. The photonic die includes an optical coupler. The electronic die is electrically coupled to the photonic die. The encapsulant laterally encapsulates the photonic die and the electronic die. The waveguide is disposed over the encapsulant and includes an upper surface facing away from the encapsulant. The waveguide includes a first end portion and a second end portion, the first end portion is optically coupled to the optical coupler, and the second end portion has a groove on the upper surface.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: Package structures and methods of forming package structures are described. A method includes placing a first package within a recess of a first substrate. The first package includes a first die. The method further includes attaching a first sensor to the first package and the first substrate. The first sensor is electrically coupled to the first package and the first substrate.

Abstract: A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate having a front side and a back side opposite the front side. The semiconductor structure also includes a first contact metal layer disposed on the front side of the substrate. The semiconductor structure further includes a III-V compound semiconductor layer disposed between the substrate and the first contact metal layer. Moreover, the semiconductor structure includes a via hole penetrating through the substrate and the III-V compound semiconductor layer from the back side of the substrate. The bottom of the via hole is defined by the first contact metal layer, and the first contact metal layer includes molybdenum, tungsten, iridium, palladium, platinum, cobalt, ruthenium, osmium, rhodium, rhenium, or a combination thereof.

Abstract: A method of manufacturing a package structure at least includes the following steps. An encapsulant laterally is formed to encapsulate the die and the plurality of through vias. A plurality of first connectors are formed to electrically connect to first surfaces of the plurality of through vias. A warpage control material is formed over the die, wherein the warpage control material is disposed to cover an entire surface of the die. A protection material is formed over the encapsulant and around the plurality of first connectors and the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

Abstract: In an embodiment, a method includes: aligning a first package component with a second package component, the first package component having a first region and a second region, the first region including a first conductive connector, the second region including a second conductive connector; performing a first laser shot on a first portion of a top surface of the first package component, the first laser shot reflowing the first conductive connector of the first region, the first portion of the top surface of the first package component completely overlapping the first region; and after performing the first laser shot, performing a second laser shot on a second portion of the top surface of the first package component, the second laser shot reflowing the second conductive connector of the second region, the second portion of the top surface of the first package component completely overlapping the second region.

Abstract: A package structure includes a die, an encapsulant laterally encapsulating the die, a warpage control material disposed over the die, and a protection material disposed over the encapsulant and around the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

Abstract: A semiconductor structure includes a die and a first connector. The first connector is disposed on the die. The first connector includes a first connecting housing, a first connecting element and a first connecting portion. The first connecting element is electrically connected to the die and disposed at a first side of the first connecting housing. The first connecting portion is disposed at a second side different from the first side of the first connecting housing, wherein the first connecting portion is one of a hole and a protrusion with respect to a surface of the second side of the first connecting housing.

Abstract: A wireless communication device includes a network interface circuit and a control circuit. The network interface circuit performs frame exchanges with a first wireless communication device on a link that is selected from a plurality of links. The first wireless communication device is operating in an enhanced multi-link single radio (EMLSR) mode. The control circuit assists the first wireless communication device with a switch back operation for early switching back to a listening operation on the plurality of links after an end of the frame exchanges between the wireless communication device and the first wireless communication device.

Abstract: A wireless communication device includes a network interface circuit and a control circuit. The network interface circuit communicates with a first wireless communication device and a second wireless communication device, where there is a peer-to-peer link established between the first wireless communication device and the second wireless communication device. The control circuit generates a first frame, and sends the first frame to the second wireless communication device through the network interface circuit, where the first frame is arranged to inform the second wireless communication device of a subband transition at the first wireless communication device.

Abstract: The ability of a grounded gate NMOS (ggNMOS) device to withstand and protect against human body model (HBM) electrostatic discharge (ESD) events is greatly increased by resistance balancing straps. The resistance balancing straps are areas of high resistance formed in the substrate between an active area that includes a MOSFET of the ggNMOS device and a bulk ring that surrounds the active area. A Vss rail is coupled to the substrate beneath the MOSFET through the bulk ring. The substrate beneath the MOSFET provides base regions for parasitic transistors that switch on for the ggNMOS device to operate. The straps inhibit low resistance pathways between the base regions and the bulk ring and prevent a large portion of the ggNMOS device from being switched off while a remaining portion of the ggNMOS device remains switched on. The strap may be divided into segments inserted at strategic locations.

Abstract: Methods and systems are described herein for improving data processing efficiency of classifying user files in a database. More particularly, methods and systems are described herein for improving data processing efficiency of classifying user files in a database in which the user files have a temporal element. The methods and system described herein accomplish these improvements by introducing time dependency into time-homogeneous probability models. Once time dependency has been introduced into the time-homogeneous probability models, these models may be used to improve the data processing efficiency of classifying the user files that feature a temporal element.

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first semiconductor device and second semiconductor device disposed on a semiconductor substrate. The first semiconductor device comprises a first gate structure, a first source region, and a first drain region. The first source and drain regions and are disposed in a first well region. The second semiconductor device comprises a second gate structure, a second source region, and a second drain region. The second source and drain regions are disposed in a second well region. The first and second well regions comprise a first doping type. The first well region is laterally offset from the second well region by a first distance. A third well region is disposed in the semiconductor substrate and laterally between the first and second well regions. The third well region comprises a second doping type opposite the first doping type.