Abstract: The present disclosure discloses an in situ U—Pb dating method for calcite, including: cutting a calcite sample to prepare an epoxy resin sample target; placing the sample in a laser ablation sample chamber, and adjusting a position of the sample in an optical axis direction; conducting line scanning ablation on the sample target, and measuring ion signal intensity data of 43Ca, 88Sr, 139La, and 238U; conducting two-dimensional (2D) element imaging to obtain a 2D element content distribution map; according to the 2D element content distribution map, determining a high-U analysis target area, conducting point ablation on the high-U target area, and measuring ion signal intensity data of 206Pb, 207Pb, and 238U; and after the element signal data is obtained, calculating 207Pb/206Pb and 238U/206Pb fractionation coefficients, correcting ratios of an unknown sample, constructing a Tera-Wasserbug diagram, and calculating age data and an initial Pb isotope (207Pb/206Pb) composition of the calcite sample.

Abstract: An implantable micro-biosensor a substrate, a first electrode, a second electrode, a third electrode, and a chemical reagent layer. The first electrode is disposed on the substrate and used as a counter electrode. The second electrode is disposed on the substrate and spaced apart from the first electrode. The third electrode is disposed on the substrate and used as a working electrode. The chemical reagent layer at least covers a sensing section of the third electrode so as to permit the third electrode to selectively cooperate with the first electrode or the first and second electrodes to measure a physiological signal in response to the physiological parameter of the analyte.

Abstract: A glucocerebroside compound, a pharmaceutical composition thereof, and the use of the glucocerebroside compound and the pharmaceutical composition thereof in the preparation of drugs for preventing or treating immune-related diseases.

Abstract: The invention provides a power supply including at least one power output port, at least one status alert component, and at least one output port status monitoring module. The status alert component generates at least one visual prompt based on an alert signal. The output port status monitoring module includes at least one temperature sensor adjacent to the power output port, a microcontroller connected to the temperature sensor and sensing an output current from the power output port, and a reset signal generator connected to the microcontroller. The microcontroller comprises at least one port status alert condition that takes a temperature and the output current of the power output port as decision factors. The microcontroller outputs the alert signal to the status alert component when the port status alert condition is met and maintains the status until a reset signal provided by the reset signal generator is received.

Abstract: A pixel detection device includes a data line, a pixel circuit, and a detection circuit. Pixel circuit is coupled to a system high voltage source, a system low voltage source, and a first reference voltage source. Detection circuit is coupled to data line and pixel circuit, and is configured to receive a driving signal and a detection control signal. Detection circuit forms a first detection loop with the system low voltage source and the data line so as to detect whether the pixel circuit is abnormal according to the driving signal and the detection control signal in a first stage. Detection circuit forms a second detection loop with the first reference voltage source, the system low voltage source, the pixel circuit, and the data line so as to detect whether the pixel circuit is abnormal according to the driving signal and the detection control signal in a second stage.

Abstract: The present disclosure provides a semiconductor structure. The structure includes a semiconductor substrate, a gate stack over a first portion of a top surface of the semiconductor substrate; and a laminated dielectric layer over at least a portion of a top surface of the gate stack. The laminated dielectric layer includes at least a first sublayer and a second sublayer. The first sublayer is formed of a material having a dielectric constant lower than a dielectric constant of a material used to form the second sublayer and the material used to form the second sublayer has an etch selectivity higher than an etch selectivity of the material used to form the first sublayer.

Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.

Abstract: An electrode controls transmittance of a blocking layer over a photodiode of a pixel sensor (e.g., a photodiode of a small pixel detector) by changing oxidation of a metal material included in the blocking layer. By using the electrode to adjust transmittance of the blocking layer, pixel sensors for different uses and/or products may be produced using a single manufacturing process. As a result, power and processing resources are conserved that otherwise would have been expended in switching manufacturing processes. Additionally, production time is decreased (e.g., by eliminating downtime that would otherwise have been used to reconfigure fabrication machines.

Abstract: An implantable micro-biosensor a substrate, a first electrode, a second electrode, a third electrode, and a chemical reagent layer. The first electrode is disposed on the substrate and used as a counter electrode. The second electrode is disposed on the substrate and spaced apart from the first electrode. The third electrode is disposed on the substrate and used as a working electrode. The chemical reagent layer at least covers a sensing section of the third electrode so as to permit the third electrode to selectively cooperate with the first electrode or the first and second electrodes to measure a physiological signal in response to the physiological parameter of the analyte.

Abstract: Apparatus and methods for generating pulse pacing in a wearable cardioverter defibrillator (“WCD”). In one aspect the WCD circuitry includes a power source such as a battery coupled to a charger that provides charge energy to an energy storage module. Control circuitry is operatively coupled to the charger and the output circuitry, and configured to cause the WCD circuitry to generate pacing pulses delivered to therapy electrodes (attached to an ambulatory patient) without a current source. The WCD circuitry includes one or more processing elements that are used to execute instructions provided by one or more software modules that are configured to support various functionality, including controlling generation of pacing pulses.

Abstract: A projection device includes a casing, a light source module, a light valve module, a projection lens, a heat dissipation module, and a fan disposed in the casing. The casing has at least one air inlet, a first air outlet, and a second air outlet. The heat dissipation module is coupled to the light source module and the light valve module and configured to cool the light source module and the light valve module. The fan has a first air exhaust and a second air exhaust. The first air exhaust and the second air exhaust are respectively disposed at positions adjacent to the first air outlet and the second air outlet of the casing.

Abstract: The present disclosure describes a method to form a backside power rail (BPR) semiconductor device with an air gap. The method includes forming a fin structure on a first side of a substrate, forming a source/drain (S/D) region adjacent to the fin structure, forming a first S/D contact structure on the first side of the substrate and in contact with the S/D region, and forming a capping structure on the first S/D contact structure. The method further includes removing a portion of the first S/D contact structure through the capping structure to form an air gap and forming a second S/D contact structure on a second side of the substrate and in contact with the S/D region. The second side is opposite to the first side.

Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: A landmark identification and marking system for a panoramic image is provided. The system includes a storage device and a back-end processor. The storage device stores an initial panoramic image, attitude information, motion tracking information, and a landmark list. The back-end processor performs steps of: adjusting a visual angle of the initial panoramic image to a designated angle according to a difference value between the visual angle and the designated angle; providing the adjusted initial panoramic image to a front-end processor for calculating and generating a panoramic image integrated with landmark objects in the virtual space.

Abstract: A new ring coupling structure for a linear accelerator includes an acceleration cavity, a coupling cavity, and a beam hole. The acceleration cavity and the coupling cavity are alternately assembled together. The beam hole penetrates through the acceleration cavity and the coupling cavity. The acceleration cavity adopts a bowl-shaped structure, a convex cone structure with a mesoporous is disposed on an inner wall of the acceleration cavity along the beam hole. Coupling holes between the acceleration cavity and the coupling cavity are designed as at least two waist-shaped holes uniformly distributed around the beam hole. The coupling cavity adopts a disc-shaped cavity structure with a thickened edge, and a nose cone is disposed in the coupling cavity and welded with cavity walls at both ends of a coupler. The left and right waveguide plates of the coupling cavity are welded together by using the nose cone.

Abstract: Apparatus, methods, and computer program products for sidelink positioning are provided. An example method includes transmitting or receiving a reservation message reserving sidelink resources for groupcasting of one or more reference signals for a group of multiple UEs including the UE, the sidelink resources for the groupcasting comprising time division multiplexed (TDM) resources for the multiple UEs in the group of multiple UEs. The example method further includes transmitting a reference signal in a resource of the TDM resources.

Abstract: The present disclosure is directed to positioning animated images within a dynamic keyboard interface. In particular, the methods and systems of the present disclosure can: receive, from a user device on which an application is executed, data indicating a context of: the application, and/or a dynamic keyboard interface provided in association with the application; identify, based at least in part on the data indicating the context, a plurality of different animated images, including an animated image comprising an advertisement, for presentation by the dynamic keyboard interface; communicate, to the user device, data indicating the plurality of different animated images; receive, from the user device, data indicating a selection of the animated image comprising the advertisement; and determine, based at least in part on the data indicating the selection and the data indicating the context, a position within the dynamic keyboard interface for presenting the animated image comprising the advertisement.

Abstract: Provided is a semiconductor device including a substrate having a lower portion and an upper portion on the lower portion; an isolation region disposed on the lower portion of the substrate and surrounding the upper portion of the substrate in a closed path; a gate structure disposed on and across the upper portion of the substrate; source and/or drain (S/D) regions disposed in the upper portion of the substrate at opposite sides of the gate structure; and a channel region disposed below the gate structure and abutting between the S/D regions, wherein the channel region and the S/D regions have different conductivity types, and the channel region and the substrate have the same conductivity type.

Abstract: Disclosed are a capacitance-to-digital conversion circuit, a capacitance-to-digital conversion method and an electronic chip. The capacitance-to-digital conversion circuit includes a first module, a comparator and an adaptive range-shift module; the first module includes a successive approximation unit, a first adder, a first digital-to-analog converter, a second adder, a third adder and an integrating unit. The first module further includes a second digital-to-analog converter connected to the third adder. The comparator, the adaptive range-shift module and the first adder are connected in series and the comparator is connected to the second digital-to-analog converter. By the present application, the adverse influence caused by the parasitic and interference is well avoided, the capacitance-to-digital conversion circuit may work in a harsh environment, the robustness of the circuit is significantly improved and the application range of the circuit is expanded.

Abstract: A device includes a transistor, a backside via, and a pair of sidewall spacers. The transistor includes a gate structure, a channel layer surrounded by the gate structure, and a first source/drain structure and a second source/drain structure connected to the channel layer. The backside via is under and connected to the first source/drain structure and includes a first portion, a second portion between the first portion and the first source/drain structure, and a third portion tapering from the first portion to the second portion in a cross-sectional view. The pair of sidewall spacers are on opposite sidewalls of the second portion of the backside via but not on opposite sidewalls of the first portion of the backside via.