Abstract: A method for manufacturing a solar cell, a method for manufacturing a monocrystalline silicon wafer and a photovoltaic module. The method for manufacturing a monocrystalline silicon wafer includes: providing a monocrystalline silicon rod; squaring the monocrystalline silicon rod to form a quasi-square silicon rod with quasi-square cross-section having an arc, a length of the arc being not less than 15 mm; slicing the quasi-square silicon rod to form at least one quasi-square silicon wafer having the arc. The method for manufacturing at least one solar cell includes: using the method described above to obtain a quasi-square silicon wafer having an arc; forming a first solar cell by processing the quasi-square silicon wafer; scribing the first solar cell to obtain a square-shaped sub-solar cell and at least one strip-shaped sub-solar cell. The above methods improve the utilization rate of the monocrystalline silicon rod and reduce production cost.

Abstract: Provided is a solar cell. The solar cell may include a semiconductor layer and a passivation film stack provided on a back surface of the semiconductor layer. The passivation film stack may include a first passivation layer provided on the back surface of the semiconductor layer and including a silicon-rich layer with a silicon atom concentration ranging from 5×1021/cm3 to 2.5×1022/cm3; a second passivation layer provided on a surface of the first passivation layer and including an oxygen-rich and nitrogen-rich layer; and a third passivation layer provided on a surface of the second passivation layer and including at least one silicon nitride film with a gradient-varied refractive index. A first refractive index of the first passivation layer may be greater than a second refractive index of the second passivation layer and smaller than a third refractive index of the third passivation layer.

Abstract: A solar cell is provided, including a substrate having a first surface and a second surface, a first dielectric layer formed on the first surface, a first doped polysilicon layer formed on the first dielectric layer, a second dielectric layer formed on the second surface, a second doped polysilicon layer formed on the second dielectric layer, a first passivation layer formed on the first doped polysilicon layer, a second passivation layer formed on the second doped polysilicon layer, first electrodes and second electrodes. The first doped polysilicon layer is doped with an N-type doping element and has a surface having a first roughness, the second doped polysilicon layer is doped with a P-type doping element and has a surface having a second roughness, and the second roughness is less than the first roughness.

Abstract: Embodiments of the present disclosure provide a solar cell and a solar cell module. The solar cell includes a first region and a second region, and further includes a substrate having a first surface and a second surface; a tunneling layer covering the second surface; a first emitter formed on part of the tunneling layer in the first region; and a second emitter formed on part of the tunneling layer in the second region and on the first emitter, a conductivity type of the second emitter being different from a conductivity type of the first emitter. The solar cell further includes a first electrode configured to electrically connect with the first emitter by penetrating through the second emitter; and a second electrode formed in the second region and configured to electrically connect with the second emitter.

Abstract: The photovoltaic module includes at least one cell unit group, where the cell unit group includes multiple cell strings, and adjacent cell strings are connected by a connection structure. The connection structure includes a lead-out structure, which includes a main body portion, a first connecting portion and a second connecting portion that are arranged on the main body portion; the first connecting portion is connected to the second connecting portion, the first connecting portion is disposed in parallel to a length direction of the main body portion, and the second connecting portion extends out of the first connecting portion. In the length direction of the main body portion, the main body portion has a first edge, the second connecting portion is closer to the first edge relative to the first connecting portion, and a distance between the second connecting portion and the first edge ranges from 2 mm to 20 mm.

Abstract: The present invention relates to a synchronous DC-DC power converter which may include a conversion cell including a number of switches and a single inductor, and a controller. The controller is configured to control a cycle of conversion of the conversion cell of the converter with multiple phases by controlling each of the switches.

Abstract: Provided is a solar cell and a photovoltaic module. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

Abstract: Provided is a busbar-free interdigitated back contact (IBC) solar cell and an IBC solar cell module. The IBC solar cell includes a semiconductor substrate, finger electrode lines and conductive lines. The finger electrode lines include first finger electrode lines and second finger electrode lines that are alternately arranged on the semiconductor substrate. The conductive lines include first conductive lines and second conductive lines that are alternately arranged. The first conductive lines are connected to the first finger electrode lines and spaced apart from the second finger electrode lines. The second conductive lines are connected to the second finger electrode lines and spaced apart from the first finger electrode lines.

Abstract: Embodiments of the present disclosure provide a method for welding cell strings and a series welding machine. The method includes: forming an arrangement of a plurality of solar cells; inspecting the arrangement of the plurality of solar cells; providing a plurality of initial welding strips including first initial welding strips and second initial welding strips, the first initial welding strips interleave with the second initial welding strips in a first direction; cutting each of the first initial welding strips at first cutting positions, and cutting each of the second initial welding strips at second cutting positions, to obtain a plurality of welding strips; moving each welding strip in a second direction to form a set of welding strips; transferring the set of welding strips onto the arrangement of the plurality of solar cells; and welding the plurality of welding strips to corresponding solar cells to form a cell string.

Abstract: The disclosure discloses a magnetic bias active suppression method and system of a hybrid distribution transformer, whether the HDT is closed or not is judged based on the grid-side current, and accordingly smooth switching of the two sets of control strategies is achieved; excitation currents of an HDT main transformer and an isolation transformer are calculated based on a magnetic potential balance principle, and nonlinear feedback is performed, and the excitation currents are superposed after an original control instruction of an HDT converter, so that magnetic bias suppression is realized on the basis of ensuring an HDT grid-side current and load voltage control function. According to the system, a complex and expensive iron core magnetic flux sensor does not need to be additionally arranged, and the DC magnetic bias of the HDT under any working condition can be eliminated while the basic control function of the HDT is not affected.

Abstract: A solar cell and a photovoltaic module are provided. The solar cell includes an N-type substrate having a front surface and a rear surface, a passivation stack disposed on the front surface, and a tunneling oxide layer and a doped conductive layer disposed on the rear surface. The passivation stack includes an oxygen-containing dielectric layer including a metal oxide material, a first passivation layer including an oxygen-containing silicon nitride material, and a second passivation layer including a silicon oxynitride material. A thickness of the oxygen-containing dielectric layer is in a range of 1 nm to 15 nm in a direction perpendicular to the front surface, a thickness of the first passivation layer is in a range of 30 nm to 60 nm in the direction perpendicular to the front surface, and a thickness of the second passivation layer is in a range of 20 nm to 40 nm in the direction perpendicular to the front surface.

Abstract: A solar cell, a manufacturing method therefor, and a photovoltaic module are provided. The solar cell includes a substrate having a front surface and a rear surface, a passivation stack disposed on the front surface, and a tunneling oxide layer and a doped conductive layer disposed on the rear surface. The passivation stack includes an oxygen-containing dielectric layer, a first passivation layer and a second passivation layer. The first passivation layer includes a first interface adjacent to the oxygen-containing dielectric layer and a second interface adjacent to the second passivation layer, the second passivation layer includes a third interface opposite to the second interface, a nitrogen content and a silicon content at the second interface are higher than those at the first interface and the third interface, respectively, and an oxygen content at the second interface is lower than that at the first interface and the third interface, respectively.

Abstract: An infrared detector includes a thermoelectric element, an infrared light absorber located on the thermoelectric element, and an electrical signal detecting element. The infrared light absorber includes a plurality of carbon nanotubes entangled with each other to form a network structure and a plurality of carbon particles in the network structure. The electrical signal detecting element is configured to detect a change of an electrical signal of the thermoelectric element.

Abstract: A sensorless commutation error compensation system for a brushless motor, comprises: a brushless motor (200) and a commutation logic module circuit (100). The commutation logic module circuit (100) is connected to three virtual Hall signal output ends of the brushless motor (200), and used for receiving three virtual Hall signals output by the brushless motor (200), obtaining three error compensation angle signals on the basis of the three virtual Hall signals, respectively superimposing the three error compensation angle signals and the three virtual Hall signals to form superposition results, and controlling the brushless motor (200) to adjust commutation timing on the basis of the superposition results, so as to achieve commutation error compensation.

Abstract: A method for making a graphene nanoribbon composite structure includes providing a substrate including a plurality of protrusions spaced apart from each other. A graphene film is grown on a growth substrate, an adhesive layer is on a surface of the graphene film away from the growth substrate. After removing the growth substrate, the graphene film and the adhesive layer are cleaned with water or an organic solvent. The graphene film, the adhesive layer, and the substrate are combined and then are dried, so that a plurality of wrinkles are formed near the plurality of protrusions. The adhesive layer is removed, and after etching a surface of the graphene film away from the substrate, the graphene films except for the plurality of wrinkles are removed, to form a plurality of graphene nanoribbons.

Abstract: Embodiments of the present disclosure provide a solar cell and a solar cell module. The solar cell includes a first region and a second region, and further includes a substrate having a first surface and a second surface; a tunneling layer covering the second surface; a first emitter formed on part of the tunneling layer in the first region; and a second emitter formed on part of the tunneling layer in the second region and on the first emitter, a conductivity type of the second emitter being different from a conductivity type of the first emitter. The solar cell further includes a first electrode configured to electrically connect with the first emitter by penetrating through the second emitter; and a second electrode formed in the second region and configured to electrically connect with the second emitter.

Abstract: A solar cell and a photovoltaic module is disclosed. The solar cell includes a silicon substrate, and the silicon substrate includes a front surface and a back surface arranged opposite to each other. P-type conductive regions and N-type conductive regions are alternately arranged on the back surface of the silicon substrate. Front surface field regions are located on the front surface of the silicon substrate and spaced from each other. The front surface field regions each corresponds to one of the P-type conductive regions or one of the N-type conductive regions. At least one front passivation layer is located on the front surface of the silicon substrate. At least one back passivation layer is located on surfaces of the P-type conductive regions and N-type conductive regions.

Abstract: A method and apparatus for computer operation improvement by flattening multi-level data structures to optimize pointer chase is provided. Within computer program code, one or more chains of multiple pointers which ultimately reference stored information to be processed are identified. These chains are analyzed to determine the feasibility of replacing the chains with a flatter data structure. In the flatter data structure, the stored information is accessible more directly. For example the data may be stored in a single array by which it can be accessed directly. When feasible, a chain is replaced with such a data structure and the computer program code is adjusted to implement the improved data structure in place of the associated chain. Candidate chains can be identified or prioritized for example on the basis of the expected impact to computer performance, e.g. in terms of operating speed or resource usage.

Abstract: A solar cell and a photovoltaic module including the solar cell. The solar cell includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a first dielectric layer located on the first surface; a first N+ doped layer located on a surface of the first dielectric layer; a first passivation layer located on a surface of the first N+ doped layer; a first electrode located on a surface of the first passivation layer; a second dielectric layer located on the second surface; a first P+ doped layer located on a surface of the second dielectric layer; a second passivation layer located on a surface of the first P+ doped layer; and a second electrode located on a surface of the second passivation layer.

Abstract: A solar cell, a method for producing a solar cell and a solar cell module are provided. The solar cell includes: a substrate having a front surface and a rear surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface and in a direction away from the front surface; wherein the first passivation layer includes a dielectric material; the second passivation layer includes a first silicon nitride SimNn material, and a ratio of n/m is 0.5˜1; the third passivation layer includes a silicon oxynitride SiOiNj material, and a ratio of j/i is 0.1˜0.6; and a tunneling oxide layer and a doped conductive layer sequentially formed on the rear surface and in a direction away from the rear surface, wherein the doped conductive layer and the substrate have a doping element of a same conductivity type.