Abstract: A modular IoT sensor system for Internet of things includes a network module and an expanded sensor module. The expanded sensor module includes a male connector and a female connector respectively disposed in two connection surfaces of the expanded sensor module, configured to detachably connect to a female connector of the network module. Shape and size of the female connector of the network module and the male connector and the female connector of the expanded sensor module conform to a USB type-C specification and pin definitions thereof are complied with a first pin definition different from USB type-C specification.

Abstract: A semiconductor device structure and methods of forming the same are described. The structure includes a first gate dielectric layer disposed over a substrate, the first gate dielectric layer includes an inner surface and an outer surface opposite the inner surface, and the first gate dielectric layer includes a fluorine concentration that decreases from the inner surface towards the outer surface. The structure further includes a second gate dielectric layer disposed on the first gate dielectric layer, the first and second gate dielectric layers have a combined thickness, and a thickness of the first gate dielectric layer ranges from about 30 percent to about 80 percent of the combined thickness. The structure further includes a gate electrode layer disposed over the second gate dielectric layer and a spacer disposed adjacent the first gate dielectric layer.

Abstract: A semiconductor device includes nanostructures extending in a first direction above a substrate and spaced apart in a second direction perpendicular to the first direction, a gate dielectric layer wrapping around each of the nanostructures, a first p-type work function metal layer between the adjacent nanostructures, a second p-type work function metal layer in contact with opposite sidewalls of the first p-type work function metal layer and opposite sidewalls of the gate dielectric layer, and an n-type work function metal layer covering the second p-type work function metal layer. The second p-type work function metal layer comprises a main layer and a cap layer over the main layer, wherein the cap layer has a material different from a material of the main layer.

Abstract: A semiconductor device structure and methods of forming the same are described. The structure includes a gate dielectric layer disposed over a substrate, a gate electrode layer disposed over the gate dielectric layer, and a first gate spacer disposed adjacent the gate dielectric layer, wherein the first gate spacer comprises an inner surface facing the gate dielectric layer and an outer surface opposite the inner surface, and the first gate spacer includes an oxygen concentration that decreases from the inner surface towards the outer surface of the first gate spacer.

Abstract: A semiconductor device includes a channel portion disposed on and spaced apart from a substrate, a gate dielectric which includes an upper dielectric region disposed on the channel portion, a first inner gate structure disposed between the substrate and the upper dielectric region, and an outer gate structure including an outer work-function portion and a cap portion. The outer work-function portion covers the upper dielectric region and the first inner gate structure. The cap portion covers the outer work-function portion in a way that the cap portion is separated from the first inner gate structure. The first inner gate structure includes a first work-function material and a conductive material that is different from the first work-function material. The outer work-function portion includes a second work-function material that is different from the conductive material.

Abstract: An integrated circuit includes a transistor having a plurality of stacked channels each extending between the source/drain regions of the transistor. The transistor also includes a hard mask nanostructure above the highest channel and extending between the source/drain regions of the transistor. A gate dielectric and gate metals wrap around the channels and the hard mask nanostructure.

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

Abstract: A maintenance service recommendation method and electronic apparatus thereof are provided. Relevant data of a faulty machine is input into a probability graph model through an interactive interface, and a recommended factor is obtained. A search is performed in the knowledge graph to pick up multiple selected categories related to the recommended factor among multiple variable categories. Based on the importance of each selected category, a hierarchical structure diagram is established and displayed on the interactive interface.

Abstract: A motor includes a rotor and a stator. The stator includes a stator core, and at least one coil module that is wound on the stator core. Each of the at least one coil module includes a plurality of first winding sets that are wound on the stator core. Each of the first winding sets includes a first end and a second end. For each of the at least one coil module, the first ends respectively of the first winding sets are electrically connected to each other, and the second ends respectively of the first winding sets are electrically connected to each other, such that the first winding sets are connected in parallel.

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a droplet generator with a nozzle and a piezoelectric structure coupled to the nozzle. The generator outputs groups of droplets. A control system applies a voltage waveform to the piezoelectric structure while the nozzle outputs the group of droplets. The waveform causes the droplets of the group to have a spread of velocities that results in the droplets coalescing into a single droplet prior to being irradiated by the laser.

Abstract: A method of inspecting an extreme ultraviolet (EUV) radiation source includes, in an idle mode, inserting a borescope mounted on a fixture through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The EUV radiation source includes an excitation laser that generates a light beam that is configured to focus onto tin droplets to generate EUV radiation inside the chamber of the EUV radiation source. The method further includes extending the extendible section, in a direction toward the second opening of the EUV radiation source, to move the camera beyond the blocking shield, and acquiring one or more images from a region beyond the blocking shield. The method also includes analyzing the one or more acquired images to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.

Abstract: A method includes irradiating a target droplet in an extreme ultraviolet (EUV) light source of an extreme ultraviolet lithography tool with non-ionizing light from a droplet illumination module. The method further includes detecting light reflected and/or scattered by the target droplet, and performing particle image velocimetry, based on the detected light, to determine a velocity of the target droplet. The method also includes adjusting a time delay between a generation of the target droplet and a generation of an excitation laser beam based on the velocity of the target droplet.

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

Abstract: A method of updating firmware to a peripheral device of a computer system in a computer network. The computer system includes a host, a system on chip (SoC), and a basic input/output system (BIOS). The host is coupled to the SoC, the SoC is coupled to the BIOS, and the BIOS is coupled to a peripheral device. The method includes an operating system (OS) running on the host controlling the SoC to initiate a firmware update to the peripheral device, in response to the firmware update, the SoC enabling the BIOS to enter a unified extensible firmware interface (UEFI), the UEFI executing an update script to update a peripheral firmware to the peripheral device, and performing a reboot to the complete firmware update to the peripheral device.

Abstract: A torque wrench includes a body and a measuring device. The body has a driving portion disposed at one end thereof. The measuring device is coupled to the body and has a control panel, which is provided with a setting button and a display unit. The setting button is configured to be pressed to allow the measuring device to set a first compensation coefficient that is between 0.85 and 1.15. The measuring device is capable of measuring the torque of the driving portion to obtain a measured torque value and to display a compensated torque value on the display unit. The compensated torque value is the product of the measured torque value and the first compensation coefficient.

Abstract: A torque wrench capable of detecting the accuracy of tripping torque includes a shaft tube, a drive rod, a tripping mechanism arranged in the shaft tube and connected to the drive rod, an adjustment mechanism arranged in the shaft tube, and a measuring device usable for measuring a torque value that applies to the drive rod connected to the shaft tube. The measuring device is usable for setting a target torque value. The target torque value is based on determining an allowable error range. The allowable error range is in a range of 0.85 times more and 1.15 times less than the target torque value. In a situation where a force is applied to the torque wrench until the tripping mechanism trips, the measuring device obtains a tripping torque value and is usable for detecting whether the tripping torque value is within the allowable error range.

Abstract: A method for using an extreme ultraviolet radiation source is provided. The method includes performing a lithography process using an extreme ultraviolet (EUV) radiation source; after the lithography processes, inserting an extraction tube into a vessel of the EUV radiation source; and cleaning a collector of the EUV radiation source by using the extraction tube.

Abstract: A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.

Abstract: In a method of inspecting an extreme ultraviolet (EUV) radiation source, during an idle mode, a borescope mounted on a fixture is inserted through a first opening into a chamber of the EUV radiation source. The borescope includes a connection cable attached at a first end to a camera. The fixture includes an extendible section mounted from a first side on a lead screw, and the camera of the borescope is mounted on a second side, opposite to the first side, of the extendible section. The extendible section is extended to move the camera inside the chamber of the EUV radiation source. One or more images are acquired by the camera from inside the chamber of the EUV radiation source at one or more viewing positions. The one or more acquired images are analyzed to determine an amount of tin debris deposited inside the chamber of the EUV radiation source.