Abstract: The present disclosure relates to a memory device that includes a substrate and source and drain regions formed in the substrate. The memory device includes a gate dielectric formed on the substrate and between the source and drain regions. The memory device also includes a gate structure formed on the gate dielectric and the gate structure has a planar top surface. The memory device further includes a multi-spacer structure that includes first, second, and third spacers. The first spacer is formed on a sidewall of the gate structure and a top surface of one of the source and drain regions. The second spacer is formed on a sidewall of the first spacer and the second spacer has a dielectric constant greater than a dielectric constant of the first spacer. The third spacer is formed on a sidewall of the second spacer and a horizontal surface of the first spacer.

Abstract: The present application discloses a strain sensing film, a pressure sensor, and a strain sensing system; the strain sensing film includes a semiconductor film, and by arranging a temperature sensor in the semiconductor film, the sensitivity of the strain sensing film is adjusted according to an effective gauge factor obtained from a calibration test and a correlation table reflecting a correlation between an effective gauge factor and a temperature, a better effective gauge factor compensation is achieved, a high sensitivity of the strain gauge of the semiconductor film can be fully utilized. The strain sensing film can be widely used in application scenarios that need to measure local strain or strain variation, force or force variation, pressure or pressure change, displacement, deformation, bending, or bending deformation.

Abstract: A method for making a super junction device includes the following steps: step 1: forming a trench gate, in the forming process of the trench gate, a polysilicon gate being used to fill gate trenches and then first flattening being performed and the width of the gate trench at the leading-out position of the gate structure satisfies the requirement of forming contacts; and step 2: forming a super junction, in the forming process of the super junction, a second epitaxial layer being used to fill a super junction trench and then second flattening being performed. The method can realize an all flat process, can conveniently arrange the trench gate process before the forming process of the super junction, can decrease the thermal processes after the formation of the super junction, can save the mask and can decrease the process cost.

Abstract: Provided are a method and system for controlling a voltage. The method includes: acquiring a current output voltage of an inverter; calculating a current voltage error of the current output voltage relative to a given output voltage; inputting the current voltage error into a fuzzy controller to determine a target output voltage of the inverter; determining an amplitude adjustment command based on a difference between an amplitude of the target output voltage and an amplitude of the current output voltage; determining a phase adjustment command based on a difference between a phase of the target output voltage and a phase of the current output voltage; and adjusting an amplitude and a phase of an output voltage of the inverter according to the amplitude adjustment command and the phase adjustment command respectively, to maintain the output voltage of the inverter within a preset range.

Abstract: The present invention provides a method and system for acquiring operating parameters of a photographic lens, including: a control circuit and a storage unit that are configured in the photographic lens, where the control circuit acquires an operating parameter of the photographic lens by using a focusing ring position sensor, a zoom ring position sensor, an aperture ring position sensor, an accelerometer and a gyro sensor; and the control circuit is further connected to a camera or an external data reading device by using a communication interface, to output the operating parameter after data encapsulation in real time.

Abstract: A method for fabricating a strain sensing film, a strain sensing film, and a pressure sensor are provided in the present application. A semiconductor wafer is firstly thinned to form a semiconductor film. A die attach film is attached onto the semiconductor film. A resulting semiconductor film is diced to form a plurality of independent strain films. The plurality of independent strain films are transferred to a substrate, and the plurality of independent strain films are completely attached to the substrate. A metal pad of each of the plurality of independent strain films is electrically connected with a corresponding metal pad of the substrate. The plurality of independent strain films are packaged. In this way, the package process of the strain sensing film is completed, which tackles the problem that the existing COB packaging has defects when being applied to package the sensor film.

Abstract: The present disclosure relates to a method for improving the surface roughness of a SOI wafer. By controlling the gas composition at each stage of the rapid thermal treatment process and corresponding heating and annealing processes, the final wafer is enabled to have a surface roughness of less than 5? and has good application prospects.

Abstract: The present application provides a strain sensing film, a pressure sensor, and a hybrid strain sensing system. The strain sensing film includes a semiconductor thin-film, at least two resistors are disposed on the semiconductor thin-film, one resistor has a different response to a strain with respect to at least another resistor, thereby enhancing resistance to external environmental disturbances and improving the accuracy of pressure measurements.

Abstract: Provided herein are small molecules comprising a first domain that binds to ASH1L and a second domain that facilitates ASH1L degradation. In particular, ASH1L-targeting proteolysis targeting chimeras (PROTACs) and methods of use thereof for the treatment of disease (e.g., acute leukemia, solid cancers and other diseases dependent on activity of ASH1L) are provided.

Abstract: The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a first III-nitride layer, a second III-nitride layer, a first contact layer, a second contact layer, a structure, and a gate layer. The second III-nitride layer is in direct contact with the first III-nitride layer. The first contact layer and the second contact layer are disposed over the second III-nitride layer. The structure is adjacent to an interface of the first III-nitride layer and the second III-nitride layer, and a material of the structure is different from a material of the first III-nitride layer or a material of the second III-nitride layer. The gate layer is disposed between the first contact layer and the second contact layer.

Abstract: According to one aspect, an autonomous vehicle that includes a lidar unit collects lidar point cloud data that includes false returns or false positives, and characterizes the data associated with the false returns or false positives as drivable or not drivable. The false returns or false positives may be phantom points that are not associated with actual objects which may pose collision risks. Analyzing lidar point cloud data to characterize false returns or false positives as either drivable or not drivable enables an autonomous vehicle to operate efficiently by not having to avoid non-existent collision risks. False positives may be indicated when a wet or icy road surface acts as a mirror which reflects objects, and when precipitation such as raindrops appear as objects. Characterizing such false positives as drivable facilitates the efficient operation of an autonomous vehicle as the autonomous vehicle may drive over a mirror and/or through precipitation.

Abstract: Techniques are disclosed for executing a data processing pipeline. The techniques may include receiving a job at a data pipeline queue, setting up one or more distributed processing environments, and allocating the job to one of the distributed processing environments. The techniques may further include receiving the allocated job at a job queue within the distributed processing environment, increasing a priority level of the job, and executing the job within the distributed processing environment. The techniques can further include providing a retry pipeline at the data processing pipeline, and re-executing the job at a stage following a failure of at least one of its components. The techniques may decrement the retry budget as the job is re-executed.

Abstract: The invention provides a suspended catamaran target boat, including a deck, a suspension structure and two buoyancy units, the suspension structure is connected to upper sides of the two buoyancy units, and the deck is mounted on the suspension structure; the suspension structure includes at least two suspension assemblies including an upper base, a lower base and two support rods. The support rods are hinged between the upper base and the lower base, and the upper base, the lower base and the two support rods form a four-bar linkage mechanism, where a shock absorber and a restricting mechanism are installed between the upper base and the lower base. The deck is provided with a main controller, an acceleration sensor and a heel sensor, and the main controller is respectively electrically connected with the acceleration sensor, the heel sensor and each of the restricting mechanisms of the two suspension assemblies.

Abstract: The present invention discloses a high nitrogen steel with high strength, low yield ratio and high corrosion resistance for ocean engineering, comprising the following chemical components by weight percentage: C?0.01%, Si?0.1%, Cr 17%-19%, Mn 14%-16%, Mo 1%-1.5%, Ti?0.05%, N 0.45%-0.6%, P?0.01%, S?0.01%, O?0.02%, and the balance of iron. The present invention also discloses a preparation method as follows: (1) raw material weighing; (2) ingot preparation, remelting and smelting; (3) solution and forging treatments; and (4) hot rolling and post-rolling treatment. A product provided by the present invention has high tensile strength, low yield ratio and high corrosion resistance. At the same time, the present invention does not need pressurized equipment in the preparation process, therefore the preparation method is simple, the cost is low, and the present invention is suitable for industrial popularization in China.

Abstract: Disclosed in the present invention are a radio frequency power amplifier, a radio frequency front-end module, and a communication terminal. The power amplifier includes a control unit, a power amplification unit, a detection and comparison unit, and a gain adjustment unit. According to a function relationship between the gain of the power amplification unit and the output power of the power amplification unit in different frequency bands and different power level modes, the control unit adjusts a function relationship between an adjustment current generated by the gain adjustment unit and a bias current of the power amplification unit; then the detection and comparison unit compares the bias current, of the power amplification unit with a reference current; according to the comparison result, the control unit controls whether the gain adjustment unit needs to generate an adjustment current and output the same to the power amplification unit.

Abstract: Disclosed are a radio-frequency power amplifier, a radio-frequency front-end module and a communication terminal. The radio-frequency power amplifier includes a control unit, a power amplification unit, a detection unit and an input matching unit. In the radio-frequency power amplifier, the detection unit detects an index parameter related to the output power of the power amplification unit in real time, converts the index parameter into a voltage positively correlated to the magnitude of the index parameter, and outputs the voltage to the input matching unit, such that a phase change of a radio-frequency signal input into the power amplification unit is the opposite of a phase change generated by an output signal of the power amplification unit, thereby effectively realizing the compensation of phase distortion of radio-frequency signals output by the power amplification unit in different modes, and improving a linearity index of the radio-frequency front-end module.

Abstract: Systems and methods are presented for identifying individuals through facial recognition, voice recognition, or the like, recalling past recorded conversations with the identified individuals, and recording and inventorying conversations with the individuals with mobile devices. In some embodiments, a method is presented. The method may include identifying, at a device, an individual through facial recognition, voice recognition, or a unique RFID. The method may also include recording a conversation with the identified individual, and recalling past relevant recorded conversations based on the identification of the individual, and transmitting the recording of the conversation to a display system configured to display the recording of the event.

Abstract: A semantic understanding method, includes: acquiring a query statement and a preceding dialogue; rewriting the query statement based on a preset rule to generate a target query statement if it is recognized that the query statement meets a rule rewriting condition according to the query statement and the preceding dialogue; rewriting the query statement based on a rewriting model to generate the target query statement if it is recognized that the query statement does not meet the rule rewriting condition according to the query statement and the preceding dialogue; and performing intention recognition according to the target query statement to generate an intention recognition result.

Abstract: A method for making a transition metal dichalcogenide crystal having a chemical formula represented as MX2 is provided, wherein M represents a central transition metal element, and X represents a chalcogen element. The method includes providing a MX2 polycrystalline powder, a MX2 seed crystal, and a transport medium. The MX2 polycrystalline powder and the transport medium are placed in a first reaction chamber. The first reaction chamber and the MX2 seed crystal are placed in a second reaction chamber having a source end and a deposition end opposite to the source end. The first reaction chamber is placed at the source end, and the MX2 seed crystal is placed at the deposition end.

Abstract: The present disclosure relates to the technical field of lithium ion battery cathode materials, and particularly discloses a method for preparing a carbon-coated lithium iron phosphate material from ferrous phosphate. The method comprises: mixing self-made ferrous phosphate with a carbon source, and sintering at a low temperature under nitrogen to remove a part of crystal water to obtain carbon-coated ferrous phosphate with a small amount of crystal water; evenly mixing ferrous phosphate with a lithium source, a phosphorus source and multiple carbon sources, and adjusting until a proper iron-to-phosphorus ratio is 0.960-0.975 and a carbon content is 1.5%-1.8%; subsequently drying slurry to obtain material powder; and sintering the material powder through a two-stage temperature rising curve, naturally cooling and then pulverizing to obtain the carbon-coated lithium iron phosphate material.