Patents by Inventor Hao-Lin Chen

Hao-Lin Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11952656
    Abstract: A physical vapor deposition (PVD) system is disclosed. The PVD system includes a pedestal configured to hold a semiconductor wafer, a cover plate configured to hold a target, and a collimator between the pedestal and the cover plate. The collimator includes a plurality of passages configured to pass source material travelling from the cover plate toward the pedestal at an angle less than a threshold angle with respect to a line perpendicular to a surface of the pedestal facing the cover plate, where the collimator is configured to block source material travelling from the cover plate toward the pedestal at an angle greater than the threshold angle, where a first passage of the plurality of passages has a first passage length, where a second passage of the plurality of passages has a second passage length, and where the first passage length is less than the second passage length.
    Type: Grant
    Filed: March 22, 2022
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuan-Lin Chen, Tsung-Yi Chou, Wei-Der Sun, Hao-Wei Kang
  • Patent number: 7723643
    Abstract: A laser peening process for the densification of metal surfaces and sub-layers and for changing surface chemical activities provides retardation of the up-take and penetration of atoms and molecules, particularly Hydrogen, which improves the lifetime of such laser peened metals. Penetration of hydrogen into metals initiates an embrittlement that leaves the material susceptible to cracking.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: May 25, 2010
    Assignees: Lawrence Livermore National Security, LLC, University of California
    Inventors: Lloyd A. Hackel, Tania M. Zaleski, Hao-Lin Chen, Michael R. Hill, Kevin K. Liu
  • Publication number: 20070221641
    Abstract: A laser peening process for the densification of metal surfaces and sub-layers and for changing surface chemical activities provides retardation of the up-take and penetration of atoms and molecules, particularly Hydrogen, which improves the lifetime of such laser peened metals. Penetration of hydrogen into metals initiates an embrittlement that leaves the material susceptible to cracking.
    Type: Application
    Filed: April 6, 2006
    Publication date: September 27, 2007
    Inventors: Lloyd Hackel, Tania Zaleski, Hao-Lin Chen, Michael Hill, Kevin Liu
  • Patent number: 6002202
    Abstract: A thin window that stands off atmospheric pressure is fabricated using photolithographic and wet chemical etching techniques and comprises at least two layers: an etch stop layer and a protective barrier layer. The window structure also comprises a series of support ribs running the width of the window. The windows are typically made of boron-doped silicon and silicon nitride and are useful in instruments such as electron beam guns and x-ray detectors. In an electron beam gun, the window does not impede the electrons and has demonstrated outstanding gun performance and survivability during the gun tube manufacturing process.
    Type: Grant
    Filed: July 19, 1996
    Date of Patent: December 14, 1999
    Assignee: The Regents of the University of California
    Inventors: Glenn Allyn Meyer, Dino R. Ciarlo, Booth Richard Myers, Hao-Lin Chen, George Wakalopulos
  • Patent number: 4482525
    Abstract: A method and apparatus for achieving nitrogen fixation includes a volumetric electric discharge chamber. The volumetric discharge chamber provides an even distribution of an electron beam, and enables the chamber to be maintained at a controlled energy to pressure (E/p) ratio. An E/p ratio of from 5 to 15 kV/atm of O.sub.2 /cm promotes the formation of vibrationally excited N.sub.2. Atomic oxygen interacts with vibrationally excited N.sub.2 at a much quicker rate than unexcited N.sub.2, greatly improving the rate at which NO is formed.
    Type: Grant
    Filed: April 21, 1983
    Date of Patent: November 13, 1984
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventor: Hao-Lin Chen
  • Patent number: 4399012
    Abstract: A method and apparatus for achieving nitrogen fixation includes a volumetric electric discharge chamber. The volumetric discharge chamber provides an even distribution of an electron beam, and enables the chamber to be maintained at a controlled energy to pressure (E/p) ratio. An E/p ratio of from 5 to 15 kV/atm of O.sub.2 /cm promotes the formation of vibrationally excited N.sub.2. Atomic oxygen interacts with vibrationally excited N.sub.2 at a much quicker rate than unexcited N.sub.2, greatly improving the rate at which NO is formed.
    Type: Grant
    Filed: August 11, 1981
    Date of Patent: August 16, 1983
    Inventor: Hao-Lin Chen
  • Patent number: 4092405
    Abstract: Method of and apparatus for non-equilibrium chemical kinetic separation of deuterium from hydrogen are described wherein hydrogen with its normal abundance of deuterium and an appropriate reactant, bromine, are supplied to a deuterium reaction vessel wherein they are vibrationally excited by, for example, being exposed to a volumetrically scalable ionizing-sustainer electrical discharge effective to provide vibrational excitation of the H.sub.2 and HD following which selective intermolecular vibration-vibration energy pumping occurs giving conditions effective to produce an HBr/DBr product mixture. The ionizing-sustainer discharge is effective to generate vibrational excitation from which follows chemical reactions that produce DBr and HBr at such relative rates that the mixture is enhanced in deuterium content relative to said content of the entering hydrogen stream. For the production of heavy water, the DBr and HBr are then dissolved in water.
    Type: Grant
    Filed: June 1, 1976
    Date of Patent: May 30, 1978
    Assignee: Avco Everett Research Laboratory, Inc.
    Inventors: Charles W. von Rosenberg, Jr., James J. Ewing, Robert E. Center, Hao-Lin Chen
  • Patent number: 4064025
    Abstract: Separation of isotopes, particularly of carbon or nitrogen, is achieved by the selective photodissociation of an azo compound or a diazoalkane, particularly azomethane or diazomethane.
    Type: Grant
    Filed: November 24, 1976
    Date of Patent: December 20, 1977
    Assignee: The United States of America as represented by the United States Energy Research & Development Administration
    Inventor: Hao-Lin Chen