Patents by Inventor Hao-Lin Hsu

Hao-Lin Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240124310
    Abstract: A method for preparing a three-dimensional carbon nanotube composite structure comprises: providing a substrate; subjecting the substrate to nickel ion modification treatment to form at least one nickel ion nuclear seed on the substrate; providing a hydrogen gas to pass through the substrate and heating the substrate to a reduction temperature for reducing the nickel ion nuclear seed by the hydrogen gas at the reduction temperature; and supplying a carbon source gas and a protective gas to pass through the substrate and heating the substrate to a growth temperature so that the carbon atoms generated by the carbon source gas through the catalytic cracking of the nickel ion nuclear seed are deposited on the bottom of the nickel ion nuclear seed to form a carbon nanotube gradually, wherein the growth temperature is greater than or equal to the reduction temperature. The three-dimensional carbon nanotube composite structure prepared by the method and its application are also disclosed.
    Type: Application
    Filed: October 13, 2022
    Publication date: April 18, 2024
    Inventors: Hao-Lin HSU, Shuhn-Shyurng HOU
  • Publication number: 20240128216
    Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.
    Type: Application
    Filed: January 4, 2023
    Publication date: April 18, 2024
    Inventors: Hao-Lin Yang, Kuan-Chieh Huang, Wei-Cheng Hsu, Tzu-Jui Wang, Ching-Chun Wang, Hsiao-Hui Tseng, Chen-Jong Wang, Dun-Nian Yaung
  • Publication number: 20240096918
    Abstract: A device structure according to the present disclosure may include a first die having a first substrate and a first interconnect structure, a second die having a second substrate and a second interconnect structure, and a third die having a third interconnect structure and a third substrate. The first interconnect structure is bonded to the second substrate via a first plurality of bonding layers. The second interconnect structure is bonded to the third interconnect structure via a second plurality of bonding layers. The third substrate includes a plurality of photodiodes and a first transistor. The second die includes a second transistor having a source connected to a drain of the first transistor, a third transistor having a gate connected to drain of the first transistor and the source of the second transistor, and a fourth transistor having a drain connected to the source of the third transistor.
    Type: Application
    Filed: January 17, 2023
    Publication date: March 21, 2024
    Inventors: Hao-Lin Yang, Tzu-Jui Wang, Wei-Cheng Hsu, Cheng-Jong Wang, Dun-Nian Yuang, Kuan-Chieh Huang
  • Publication number: 20240079434
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor including first chip and a second chip. The first chip includes a first substrate, a plurality of photodetectors disposed in the first substrate, a first interconnect structure disposed on a front side of the first substrate, and a first bond structure disposed on the first interconnect structure. The second chip underlies the first chip. The second chip includes a second substrate, a plurality of semiconductor devices disposed on the second substrate, a second interconnect structure disposed on a front side of the second substrate, and a second bond structure disposed on the second interconnect structure. A first bonding interface is disposed between the second bond structure and the first bond structure. The second interconnect structure is electrically coupled to the first interconnect structure by way of the first and second bond structures.
    Type: Application
    Filed: January 5, 2023
    Publication date: March 7, 2024
    Inventors: Hao-Lin Yang, Kuan-Chieh Huang, Wei-Cheng Hsu, Tzu-Jui Wang, Chen-Jong Wang, Dun-Nian Yaung, Yu-Chun Chen
  • Publication number: 20230122386
    Abstract: 3D bundle-shaped multi-walled carbon nanotubes and preparation method, includes the following steps: uniformly mixing bi-component alloy catalyst and transition metal in an inert gas environment in order to obtain a three-component nano-intermetallic alloy catalyst; disposing the intermetallic catalyst on the substrate; allowing hydrogen to flow through the substrate, and heating the substrate to a first temperature, and using the hydrogen to undergo a reduction of the intermetallic catalyst at the first temperature; applying a protective gas and a carbon source gas, heating the substrate to a second temperature, undergoing a reaction at the second temperature to generate the 3D bundle-shaped multi-walled carbon nanotubes, and collecting the 3D bundle-shaped multi-walled carbon nanotubes after annealing; wherein the second temperature is greater than or equal to the first temperature; a working electrode includes conductive drain material, a conductive bonding gent and a plurality of 3D bundle-shaped multi-wa
    Type: Application
    Filed: October 18, 2021
    Publication date: April 20, 2023
    Inventors: Hao-Lin HSU, Jean-Hong CHEN
  • Patent number: 10935525
    Abstract: A method for detecting a gas sample includes the following steps of: providing a carbon aerogel sleeve; introducing a gas sample to the carbon aerogel sleeve, and then sequentially extracting, concentrating, activating, and re-concentrating the gas sample adsorbed by the carbon aerogel and detecting a concentration of the re-concentrated gas sample by a gas chromatograph-mass spectrometer (GC-MS); and extracting the carbon aerogel for several hours with reflux in a dichloromethane solvent and a n-hexane solvent several times per hour to remove the residual gas sample, and then drying the extracted carbon aerogel for reuse, wherein the dichloromethane solvent and the n-hexane solvent are at a volume ratio of 0.001-1000.
    Type: Grant
    Filed: December 1, 2018
    Date of Patent: March 2, 2021
    Assignee: KUN SHAN UNIVERSITY
    Inventors: Hao-Lin Hsu, Chung-Yih Kuo, Jean-Hong Chen
  • Publication number: 20200173969
    Abstract: A method for detecting a gas sample includes the following steps of: providing a carbon aerogel sleeve; introducing a gas sample to the carbon aerogel sleeve, and then sequentially extracting, concentrating, activating, and re-concentrating the gas sample adsorbed by the carbon aerogel and detecting a concentration of the re-concentrated gas sample by a gas chromatograph-mass spectrometer (GC-MS); and extracting the carbon aerogel for several hours with reflux in a dichloromethane solvent and a n-hexane solvent several times per hour to remove the residual gas sample, and then drying the extracted carbon aerogel for reuse, wherein the dichloromethane solvent and the n-hexane solvent are at a volume ratio of 0.001-1000.
    Type: Application
    Filed: December 1, 2018
    Publication date: June 4, 2020
    Inventors: Hao-Lin Hsu, Chung-Yih Kuo, Jean-Hong Chen