Abstract: A method for forming a micro-lens array is provided. According to the method, a substrate is provided, and a hard-mask layer is formed. A lithography process is performed on the hard-mask layer by a hard-mask to form a first pattern and a second pattern. Then, the first pattern and the second pattern are reflowed to form a first lens structure and a second lens structure respectively. The photomask includes a first pattern segment and a second pattern segment, and the second pattern segment includes a transparent region and an opaque region. An area of the transparent region of the second pattern segment is larger than 18% of an area of the second pattern segment.

Abstract: An image sensor includes: a substrate; color filter units disposed on the substrate; and a grid structure disposed on the substrate and surrounding each of the color filter units. The grid structure includes: a first partition wall, disposed on the substrate, located between the color filter units; and a second partition wall, disposed directly on the first partition wall, located between the color filter units. A top width of the second partition wall is smaller than a bottom width of the second partition wall.

Abstract: A method for forming a micro-lens array is provided. According to the method, a substrate is provided, and a hard-mask layer is formed. A lithography process is performed on the hard-mask layer by a hard-mask to form a first pattern and a second pattern. Then, the first pattern and the second pattern are reflowed to form a first lens structure and a second lens structure respectively. The photomask includes a first pattern segment and a second pattern segment, and the second pattern segment includes a transparent region and an opaque region. An area of the transparent region of the second pattern segment is larger than 18% of an area of the second pattern segment.

Abstract: A method for fabricating an optical element is provided. A substrate is provided. A plurality of metal grids are formed on the substrate. An organic layer is formed on the substrate and the metal grids. The organic layer is etched to form a first patterned organic layer including a plurality of first protrusion portions and a plurality of first trenches surrounded by the first protrusion portions. The first patterned organic layer is etched to form a second patterned organic layer including a plurality of second protrusion portions and a plurality of second trenches surrounded by the second protrusion portions. Each second protrusion portion covers one metal grid. There is a distance between the center axis of one second protrusion portion of the second patterned organic layer and the center axis of one metal grid covered by the one second protrusion portion of the second patterned organic layer.

Abstract: A method for fabricating an optical element is provided. A substrate is provided. A plurality of metal grids are formed on the substrate. An organic layer is formed on the substrate and the metal grids. The organic layer is etched to form a first patterned organic layer including a plurality of first protrusion portions and a plurality of first trenches surrounded by the first protrusion portions. The first patterned organic layer is etched to form a second patterned organic layer including a plurality of second protrusion portions and a plurality of second trenches surrounded by the second protrusion portions. Each second protrusion portion covers one metal grid. There is a distance between the center axis of one second protrusion portion of the second patterned organic layer and the center axis of one metal grid covered by the one second protrusion portion of the second patterned organic layer.

Abstract: An optical fingerprint sensor, includes: an image sensor array; a collimator layer disposed above the image sensor array, the collimator array having an array of first apertures; a light guiding layer disposed on the collimator layer; a light source emitting light into the light guiding layer; and a sensing area disposed above the light guiding layer. The light guiding layer allows a portion of the light from the light source to enter to the sensing area while directing the remaining portion of the light forward.

Abstract: A method for forming a micro-lens array is provided. According to the method, a substrate is provided, and a hard-mask layer is formed. A lithography process is performed on the hard-mask layer by a hard-mask to form a first pattern and a second pattern. Then, the first pattern and the second pattern are reflowed to form a first lens structure and a second lens structure respectively. The photomask includes a first pattern segment and a second pattern segment, and the second pattern segment includes a transparent region and an opaque region. An area of the transparent region of the second pattern segment is larger than 18% of an area of the second pattern segment.

Abstract: An optical fingerprint sensor, includes: an image sensor array; a collimator layer disposed above the image sensor array, the collimator array having an array of first apertures; a light guiding layer disposed on the collimator layer; a light source emitting light into the light guiding layer; and a sensing area disposed above the light guiding layer. The light guiding layer allows a portion of the light from the light source to enter to the sensing area while directing the remaining portion of the light forward.

Abstract: An image sensor includes a sensing layer, a filter unit, and a conductive layer. The filter unit is disposed on the sensing layer. The conductive layer surrounds the filter unit, and is disposed on the sensing layer. Therefore, light passing through the filter unit and falling on an adjacent sensing unit is minimized, and the image quality of the image sensor is improved.

Abstract: A solid-state imaging device is provided. The solid-state imaging device includes a semiconductor substrate containing a plurality of photoelectric conversion elements. A color filter layer includes a first color filter component and a second color filter component separated from each other and disposed above the semiconductor substrate. A microlens structure includes a first microlens element and a second microlens element separated from each other and disposed on the first and second color filter components respectively. The solid-state imaging device also includes a gap filled with air. The gap is disposed between the first and second color filter components and also between the first and second microlens elements.

Abstract: The invention provides a color filter of an illumination image sensor and a method for fabricating the same. A color filter of an illumination image sensor includes a light shield portion constructed by a plurality of grid photoresist patterns, wherein the light shield portion covers a back side surface of the silicon wafer in a periphery region of an illumination image sensor chip.

Abstract: A solid-state imaging device is provided. The solid-state imaging device includes a semiconductor substrate containing a plurality of photoelectric conversion elements. A color filter layer includes a first color filter component and a second color filter component separated from each other and disposed above the semiconductor substrate. A microlens structure includes a first microlens element and a second microlens element separated from each other and disposed on the first and second color filter components respectively. The solid-state imaging device also includes a gap filled with air. The gap is disposed between the first and second color filter components and also between the first and second microlens elements.

Abstract: An image sensor includes a sensing layer, a filter unit, and a conductive layer. The filter unit is disposed on the sensing layer. The conductive layer surrounds the filter unit, and is disposed on the sensing layer. Therefore, light passing through the filter unit and falling on an adjacent sensing unit is minimized, and the image quality of the image sensor is improved.

Abstract: The invention provides a color filter of an illumination image sensor and a method for fabricating the same. A color filter of an illumination image sensor includes a light shield portion constructed by a plurality of grid photoresist patterns, wherein the light shield portion covers a back side surface of the silicon wafer in a periphery region of an illumination image sensor chip.