Patents by Inventor Hao-Min Huang

Hao-Min Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250132744
    Abstract: An acoustic wave device and a fabricating method are provided. The acoustic wave device includes a substrate, a first frame, a first electrode, a piezoelectric layer and a second electrode. The substrate includes a first surface and a second surface opposite thereto. A reflector recess and a first recess may be depressed from the first surface. The first recess may at least partially surround the reflector recess, and may be separated from the reflector recess. The first frame is disposed in the first recess of the substrate. The first electrode is disposed on the substrate and contacts the first frame. The piezoelectric layer is disposed at least on the first electrode. The second electrode is disposed at least on the piezoelectric layer. The reflector recess of the substrate, the first electrode, the piezoelectric layer, and the second electrode at least partially overlap along a vertical direction.
    Type: Application
    Filed: November 16, 2023
    Publication date: April 24, 2025
    Applicant: RichWave Technology Corp.
    Inventor: Hao-Min Huang
  • Publication number: 20250112609
    Abstract: An acoustic wave device and a manufacture method thereof are provided. The acoustic wave device comprises a first substrate, a plurality of first electrodes, a second substrate, a plurality of second electrodes and a film. The first substrate comprises a first surface and a second surface. The plurality of first electrodes are disposed on the second surface of the first substrate. The second substrate comprises a third surface and a fourth surface. The plurality of second electrodes are disposed on the third surface of the second substrate. The second surface of the first substrate faces the third surface of the second substrate, such that the plurality of first electrodes and the plurality of second electrodes are arranged between the first substrate and the second substrate. The film is disposed between the plurality of first electrodes and the plurality of second electrodes.
    Type: Application
    Filed: November 1, 2023
    Publication date: April 3, 2025
    Applicant: RichWave Technology Corp.
    Inventor: Hao-Min Huang
  • Publication number: 20240305260
    Abstract: A manufacturing method of an acoustic wave device and an acoustic wave device are provided. The manufacturing method includes providing a piezoelectric substrate. A transducer and a solder layer are provided on the piezoelectric substrate, and the transducer is covered with a passivation layer. The method further includes forming a first photoresist layer on the piezoelectric substrate, and patterning the first photoresist layer to form a first patterned photoresist layer. The first patterned photoresist layer covers an upper surface of the passivation layer and exposes an upper surface of the solder layer. The method further includes forming a metal layer on the upper surface of the solder layer and the first patterned photoresist layer, and stripping the first patterned photoresist layer.
    Type: Application
    Filed: November 10, 2023
    Publication date: September 12, 2024
    Applicant: RichWave Technology Corp
    Inventor: Hao-Min Huang
  • Publication number: 20050196687
    Abstract: The present invention discloses appropriate layout design of a single mask and proper operation of exposing device in the process of semiconductor production for reducing diffraction effects caused by tiny pattern in exposing process, therefore effectively enhances the resolution in exposing process, and increases the yield.
    Type: Application
    Filed: April 25, 2005
    Publication date: September 8, 2005
    Inventors: Hao-Min Huang, Chen-Tung Huang
  • Patent number: 6924083
    Abstract: The present invention discloses appropriate layout design of a single mask and proper operation of exposing device in the process of semiconductor production for reducing diffraction effects caused by tiny pattern in exposing process, therefore effectively enhances the resolution in exposing process, and increases the yield.
    Type: Grant
    Filed: October 18, 2002
    Date of Patent: August 2, 2005
    Assignee: Tai-Saw Technology Co., Ltd.
    Inventors: Hao-Min Huang, Chen-Tung Huang
  • Publication number: 20040076889
    Abstract: The present invention discloses appropriate layout design of a single mask and proper operation of exposing device in the process of semiconductor production for reducing diffraction effects caused by tiny pattern in exposing process, therefore effectively enhances the resolution in exposing process, and increases the yield.
    Type: Application
    Filed: October 18, 2002
    Publication date: April 22, 2004
    Inventors: Hao-Min Huang, Chen-Tung Huang