Abstract: The present disclosure provides a forksheet structure in a semiconductor device and methods of manufacturing thereof. The forksheet structure according to the present disclosure includes a dielectric wall disposed between two channel regions inside a gate structure and without extending through the sidewall spacers to the source/drain regions. In some embodiments, a cut metal gate (CMG) dielectric structure is formed in the gate structure along with the dielectric walls. A gate dielectric layer is in contact with the dielectric wall. In some embodiments, the dielectric layer surrounds semiconductor channels in the channel region. In other embodiments, the gate dielectric layer surrounds a portion of the semiconductor channels in the channel region, for example forming a ?-shape cross sectional profile around the semiconductor channel.

Abstract: The present application provides tricyclic urea compounds that modulate the activity of the V617F variant of JAK2, which are useful in the treatment of various diseases, including cancer.

Abstract: A multi-layer low-pass filter is used to filter a first frame of video data representing at least a portion of an environment of an individual. A first layer of the filter has a first filtering resolution setting for a first subset of the first frame, while a second layer of the filter has a second filtering resolution setting for a second subset. The first subset includes a data element positioned along a direction of a gaze of the individual, and the second subset of the frame surrounds the first subset. A result of the filtering is compressed and transmitted via a network to a video processing engine configured to generate a modified visual representation of the environment.

Abstract: Devices and methods that a first gate structure wrapping around a channel layer disposed over the substrate, a second gate structure wrapping around another channel layer disposed over the substrate and a dielectric fin structure formed over a shallow trench isolation (STI) feature and between the first and second gate structures. At least one metallization layer is formed on the first gate structure, the dielectric fin structure, and the second gate structure and contiguously extends from the first gate structure to the second gate structure.

Abstract: A keyboard device includes plural keycaps, a base plate, plural connecting elements and a circuit board. The plural connecting elements are connected with the respective keycaps and the base plate. The circuit board is located over the base plate. The circuit board includes plural membrane switches and plural first capacitance sensing units. When one of the first capacitance sensing units detects an approaching conductor or detects a motion of the conductor, a driving signal is generated or a control signal is outputted.

Abstract: Provided are a GLP-1 receptor agonist compound and a composition and use thereof. The compound can be used for treating or preventing GLP-1 receptor-mediated diseases or disorders and related diseases or disorders.

Abstract: A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.

Abstract: An apparatus and a method for executing a customized production line using an artificial intelligence development platform, a computing device and a computer readable storage medium are provided. The apparatus includes: a production line executor configured to generate a native form of the artificial intelligence development platform based on a file set, the native form to be sent to a client accessing the artificial intelligence development platform so as to present a native interactive page of the artificial intelligence development platform; and a standardized platform interface configured to provide an interaction channel between the production line executor and the artificial intelligence development platform. The production line executor is further configured to generate an intermediate result by executing processing logic defined in the file set and to process the intermediate result by interacting with the artificial intelligence development platform via the standardized platform interface.

Abstract: A method of fabricating a device includes forming a dummy gate over a plurality of fins. Thereafter, a first portion of the dummy gate is removed to form a first trench that exposes a first hybrid fin and a first part of a second hybrid fin. The method further includes filling the first trench with a dielectric material disposed over the first hybrid fin and over the first part of the second hybrid fin. Thereafter, a second portion of the dummy gate is removed to form a second trench and the second trench is filled with a metal layer. The method further includes etching-back the metal layer, where a first plane defined by a first top surface of the metal layer is disposed beneath a second plane defined by a second top surface of a second part of the second hybrid fin after the etching-back the metal layer.

Abstract: A method for controlling battery swapping of a vehicle is provided. The vehicle induces a vehicle control unit (VCU), a bidirectional DC-DC converter assembly, a vehicle load, a battery controller, a power battery pack, and a storage battery. The method includes: receiving, by the VCU, a battery swapping instruction when the vehicle is in the high-voltage power-on state; transmitting, by the VCU, a switching instruction to the bidirectional DC-DC converter assembly in response to the battery swapping instruction; and disabling, by the bidirectional DC-DC converter assembly, the buck mode in response to the switching instruction to cut off electrical connection between the power battery pack and a high-voltage circuit of the vehicle by a battery controller, and enabling the boost mode in response to the switching instruction to supply power to the vehicle load by the storage battery through the bidirectional DC-DC converter assembly.

Abstract: A method of forming a semiconductor device includes forming semiconductor strips protruding above a substrate and isolation regions between the semiconductor strips; forming hybrid fins on the isolation regions, the hybrid fins comprising dielectric fins and dielectric structures over the dielectric fins; forming a dummy gate structure over the semiconductor strip; forming source/drain regions over the semiconductor strips and on opposing sides of the dummy gate structure; forming nanowires under the dummy gate structure, where the nanowires are over and aligned with respective semiconductor strips, and the source/drain regions are at opposing ends of the nanowires, where the hybrid fins extend further from the substrate than the nanowires; after forming the nanowires, reducing widths of center portions of the hybrid fins while keeping widths of end portions of the hybrid fins unchanged, and forming an electrically conductive material around the nanowires.

Abstract: The present disclosure discloses a novel strain of Glutamicibacter, derived from insects, which efficiently degrades bifenthrin, belonging to the field of microbial strains. The Glutamicibacter CCTCC NO: M20221445 of the present disclosure was isolated from the intestinal tract of bifenthrin-resistant Ectropis grisescens Warren larvae. It exhibits unique genomic characteristics, growth and phenotypic traits, physiological and biochemical characteristics, as well as the ability to utilize and degrade bifenthrin efficiently. Specifically, it can effectively degrade bifenthrin. Based on phenotypic features, physiological and biochemical characteristics, chemical composition, and molecular biology-based polyphasic classification, Glutamicibacter CCTCC NO: M20221445 is identified as a new species. This bacterium possesses the capability to efficiently degrade bifenthrin, laying the foundation for biological control of E. grisecens and offering new microbial resources to address pesticide residue problems.

Abstract: A method for driving an electronic device includes the following steps: receiving a first image data, detecting a first frame rate corresponding to the first image data, generating at least one first scanning signal according to the first image data, receiving a second image data, detecting a second frame rate corresponding to the second image data, and generating at least one second scanning signal according to the second image data. The at least one first scanning signal has a first high voltage level value. The at least one second scanning signal has a second high voltage level value. When the first frame rate is different from the second frame rate, the first high voltage level value is different from the second high voltage level value.

Abstract: A semiconductor structure includes a functional die, a dummy die, a redistribution structure, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The redistribution structure is disposed over and electrically connected to the functional die. The seal ring is disposed over the dummy die. The alignment mark is between the seal ring and the redistribution structure, wherein the alignment mark is electrically isolated from the dummy die, the redistribution structure and the seal ring. The insulating layer encapsulates the functional die and the dummy die.

Abstract: An integrated circuit and method of making an integrated circuit is provided. The integrated circuit includes an electrically conductive pad having a generally planar top surface that includes a cavity having a bottom surface and sidewalls extending from the bottom surface of the cavity to the top surface of the pad. An electronic device is attached to the top surface of the electrically conductive pad. A wire bond is attached from the electronic device to the bottom surface of the cavity. A molding compound encapsulates the electronic device.

Abstract: In one implementation, a method includes receiving a warped image representing simulated reality (SR) content (e.g., to be displayed in a display space), the warped image having a plurality of pixels at respective locations uniformly spaced in a grid pattern in a warped space, wherein the plurality of pixels are respectively associated with a plurality of respective pixel values and a plurality of respective scaling factors indicating a plurality of respective resolutions at a plurality of respective locations of the SR content (e.g., in the display space). The method includes processing the warped image in the warped space based on the plurality of respective scaling factors to generate a processed warped image and transmitting the processed warped image.

Abstract: A power converter includes a primary-side rectifying/filtering circuit, an AC-DC converter, a DC/DC converter, a primary-side controller, a secondary-side rectifying controller, and a secondary-side feedback controller. The primary-side rectifying/filtering circuit receives an input voltage, and rectifies and filters the input voltage into an adjusted input voltage. The AC-DC converter receives the adjusted input voltage. The primary-side controller provides a first control signal to control the AC-DC converter to convert the adjusted input voltage into a DC input voltage, and provides a second control signal to control the DC-DC converter. The secondary-side rectifying controller provides a third control signal to control the DC-DC converter to convert the DC input voltage into a conversion voltage to supply power to a load according to a gain condition.

Abstract: The present disclosure provides MTR kinase polypeptides having improved properties as compared to a naturally occurring wild-type MTR kinase polypeptide including the capability of phosphorylating D-ribose and 5?-D-isobutyrylribose to give alpha-D-ribose-1-phosphate and alpha 5?-D-isobutyrylribose-1-phosphate. Also provided are polynucleotides encoding the MTR kinase polypeptides, host cells capable of expressing the MTR kinase polypeptides, and methods of using the MTR kinase polypeptides to synthesize alpha-D-ribose-1-phosphate and alpha 5?-D-isobutyrylribose-1-phosphate.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first stack structure formed over a substrate, and the first stack structure includes a plurality of nanostructures that extend along a first direction. The semiconductor structure includes a second stack structure formed adjacent to the first stack structure, and the second stack structure includes a plurality of nanostructures that extend along the first direction. The semiconductor structure includes a first gate structure formed over the first stack structure, and the first gate structure extends along a second direction. The semiconductor structure also includes a dielectric wall between the first stack structure and the second stack structure, and the dielectric wall includes a low-k dielectric material, and the dielectric wall is connected to the first stack structure and the second stack structure.

Abstract: A semiconductor device includes a substrate, a shallow trench isolation structure, two epitaxial structures, one or more semiconductor channel layers, a gate metal layer and a gate spacer. The shallow trench isolation structure is disposed over the substrate. The epitaxial structures are disposed over the shallow trench isolation structure. The one or more semiconductor channel layers connect the two epitaxial structures. The gate metal layer is located between the epitaxial structures and engages the one or more semiconductor channel layers. The gate spacer is in contact with a sidewall of the gate metal layer. From a cross-section view, a neck portion of the gate metal layer adjacent to and along the one or more semiconductor channel layers, and one side of the neck portion is retracted by a distance relative to the gate spacer, and the distance is greater than 0 and less than or equal to 2 nanometers.