Patents by Inventor Hao-Pu Chang

Hao-Pu Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11177075
    Abstract: A method for forming the polymer composite material onto the capacitor element is provided. The method includes a preparing step, a resting step, an immersing step, and a polymerization step. The preparing step includes forming a homogeneous reaction solution containing 3,4-ethylenedioxythiophene, an emulsifier, polystyrene sulfonic acid or salts thereof, an oxidant, and a solvent. The resting step includes resting the homogeneous reaction solution to generate microparticles so that a nonhomogeneous reaction solution containing the microparticles is formed. The immersing step includes immersing the capacitor element into the nonhomogeneous reaction solution so that the nonhomogeneous reaction solution is coated onto the capacitor element and a reaction layer is formed on the capacitor element.
    Type: Grant
    Filed: July 7, 2020
    Date of Patent: November 16, 2021
    Assignee: APAQ TECHNOLOGY CO., LTD.
    Inventors: Chieh Lin, Hao-Pu Chang
  • Publication number: 20210012971
    Abstract: A method for forming the polymer composite material onto the capacitor element is provided. The method includes a preparing step, a resting step, an immersing step, and a polymerization step. The preparing step includes forming a homogeneous reaction solution containing 3,4-ethylenedioxythiophene, an emulsifier, polystyrene sulfonic acid or salts thereof, an oxidant, and a solvent. The resting step includes resting the homogeneous reaction solution to generate microparticles so that a nonhomogeneous reaction solution containing the microparticles is formed. The immersing step includes immersing the capacitor element into the nonhomogeneous reaction solution so that the nonhomogeneous reaction solution is coated onto the capacitor element and a reaction layer is formed on the capacitor element.
    Type: Application
    Filed: July 7, 2020
    Publication date: January 14, 2021
    Inventors: CHIEH LIN, Hao-Pu Chang