Abstract: In an example embodiment, content understanding/embeddings are obtained for content of multiple different content types, using a generative artificial intelligence (GAI) model, and then those content understanding/embeddings can be utilized to match content across content type. In such embodiments, the embeddings may be used as input to a separately trained machine learning model that is designed to provide a similarity score between two different pieces of content, even when those two different pieces are of two different content types.

Abstract: Disclosed are an OTS-based dynamic storage structure and an operation method thereof. The OTS-based dynamic storage structure includes a plurality of storage units distributed in an array, and each storage unit includes an OTS gating transistor and a storage capacitor. The OTS gating transistor has two states, namely, high resistance state and low resistance state. When the voltage across the OTS gating transistor exceeds the threshold voltage Vth, the OTS gating transistor is switched from the high resistance state to the low resistance state. When the voltage across the OTS gating transistor in the low resistance state is lower than the holding voltage Vhold, the OTS gating transistor is switched from the low resistance state to the high resistance state.

Abstract: The disclosure belongs to the field of micro-nano electronic materials, and in particular to a Se-based selector material, a selector unit, and a preparation method thereof. The Se-based selector material is a compound including Ge, Se, and B elements. The chemical formula of the Se-based selector material is (GexSe1?x)1?yByMz, in which the M element is at least one of In, Ga, Al, and Zn, and 0.1?x?0.9, 0.02?y?0.15, and 0?z?0.2. The problems of safety and stability of the existing material selection for the selector are solved by the selector material, the selector unit, and the preparation method thereof provided by the disclosure. In addition, the threshold voltage of the selector device prepared based on the Se-based selector material is adjustable, and the comprehensive performance is good.

Abstract: A method for operating a dynamic memory is provided, and the method includes the following steps. A refresh operation is performed on the dynamic memory according to predetermined interval time T, an operation command is received in real time at the same time, a read operation is performed on a selected memory cell according to position information of the selected memory cell in the operation command when the operation command is received, and state data read in the read operation is temporarily stored in a read buffer. The interval time T is less than time t required for a voltage value of a capacitor in the memory cell to drop to a critical capacitor voltage value for the read operation to correctly read the state data of the memory cell during a write operation. According to operation command type information in the operation command, corresponding operations are performed on the selected memory cell.

Abstract: This application provides a phase change material. The phase change material comprises a hafnium-containing material, the hafnium-containing material is formed by doping hafnium-containing or a hafnium-containing compound to a parent material, and the parent material comprises a compound that is formed by tellurium and at least one of germanium, antimony, and bismuth and that can perform a phase change.

Abstract: A method for operating a dynamic memory is provided, and the method includes the following steps. A refresh operation is performed on the dynamic memory according to predetermined interval time T, an operation command is received in real time at the same time, a read operation is performed on a selected memory cell according to position information of the selected memory cell in the operation command when the operation command is received, and state data read in the read operation is temporarily stored in a read buffer. The interval time T is less than time t required for a voltage value of a capacitor in the memory cell to drop to a critical capacitor voltage value for the read operation to correctly read the state data of the memory cell during a write operation. According to operation command type information in the operation command, corresponding operations are performed on the selected memory cell.

Abstract: The disclosure discloses a three-dimensional (3D) convolution operation device and method based on a 3D phase change memory, which includes a 3D phase change memory, an input control module, a setting module, and an output control module. By using the 3D phase change memory to perform 3D convolution operation, the phase change units on the same bit line constitute a convolution kernel. Based on the multilayer stack structure, the upper and lower electrodes of the 3D phase change memory serve as the information input terminal, and they are convolved after passing through the respective phase change unit arrays, and the result of the convolution operation is superposed on the middle electrode in the form of current, thereby obtaining the sum of the convolution calculation results of the input information of the upper and lower electrodes, such that the 3D convolution operation is completed in one step.

Abstract: Disclosed are an information processing method, an intermediate resolver, a network device and a non-transitory computer-readable storage medium. The information processing method may include: receiving first Domain Name System (DNS) request information; obtaining, according to the first DNS request information, second DNS request information comprising ciphertext sensitive information and first ciphertext marking information for indicating the ciphertext sensitive information being ciphertext information; and sending the second DNS request information to an authoritative DNS server, so that the authoritative DNS server performs information processing according to the ciphertext sensitive information and the first ciphertext marking information.

Abstract: The disclosure belongs to the technical field of microelectronic devices and memories, and discloses a three-dimensional stacked phase change memory and a preparation method thereof. The preparation method includes: preparing a multilayer structure in which horizontal electrode layers and insulating layers are alternately stacked, then performing etching to form trenches and separated three-dimensional strip electrodes, next filling the trenches with an insulating medium, and then forming small holes at the boundary region between the three-dimensional strip electrodes and the insulating medium, thereafter sequentially depositing a phase change material on the walls of the small holes, and filling the small holes with an electrode material to prepare vertical electrodes, so as to obtain a three-dimensional stacked phase change memory stacked in multiple layers.

Abstract: A selector device including a first metal electrode layer, a second metal electrode layer and a switching layer disposed between the first metal electrode layer and the second metal electrode layer. The switching layer is a stacked assembly of ABA, BAB, AB or BA, where A is an ion supply layer, and B is a conversion layer. The ion supply layer includes a chalcogenide metal material having a metal atomic content of more than 0% and not more than 50% with respect to the chalcogenide metal material. The conversion layer includes a chalcogenide material.

Abstract: A pretreatment method of a selector device is provided, which includes: (1) performing a first voltage scan of a selector through selecting a voltage scan range and setting a first limit current Icc1 to obtain a resistance state R1 of a sub-threshold region thereof; (2) setting an nth limit current Icc(n) and performing an nth voltage scan of the selector according to a resistance state Rn-1 of a sub-threshold region of the selector after an n?1th voltage scan to obtain a resistance state Rn of a sub-threshold region thereof, where, Icc(n-1)<Icc(n), and an initial value of n is 2; and (3) stopping a voltage scan of the selector device under a read voltage is applied when a resistance value of a high resistance state of the selector device after the nth voltage scan is greater than a resistance value of a high resistance state of the selector device after the first voltage scan; otherwise, n=n+1, and returning to Step (2).

Abstract: Disclosed in the present invention are a chalcogenide phase change material based all-optical switch and a manufacturing method therefor, relating to the field of optical communications. The all-optical switch comprises: stacked in sequence, a cover layer film, a chalcogenide phase change material film, an isolation layer film, a silicon photonic crystal, and a substrate. The silicon photonic crystal comprises a nano-porous structure such that the silicon photonic crystal has a Fano resonance effect. When the all-optical switch is used, the state of the chalcogenide phase change material film is controlled by means of laser, and the resonance state of the silicon photonic crystal is modulated to implement modulation of signal light transmissivity; the modulation range is within a communication band from 1500 nm to 1600 nm, thereby implementing an optical switch. The all-optical switch of the present invention has the characteristics of high contrast ratio, high rate and low loss.

Abstract: A management method for Content Delivery Network (CDN) function virtualization, including: sending a node creation request to a Mobile/Multi-access Edge Application Orchestrator (MEAO), so that the MEAO controls a Mobile/Multi-access Edge computing Platform (MEP) to perform node instantiation processing to generate a Mobile/Multi-access Edge Computing-CDN (MEC-CDN) node, wherein the MEC-CDN node includes at least one virtualization function module that supports a service operation, and the virtualization function module accesses a storage resource pool via a unified storage access interface provided by a storage resource management module (S101); and connecting the MEC-CDN node to a CDN (S102). Further provided are a CDN management node, an MEAO, an MEP, an electronic device, and a computer readable medium.

Abstract: The disclosure discloses a three-dimensional (3D) convolution operation device and method based on a 3D phase change memory, which includes a 3D phase change memory, an input control module, a setting module, and an output control module. By using the 3D phase change memory to perform 3D convolution operation, the phase change units on the same bit line constitute a convolution kernel. Based on the multilayer stack structure, the upper and lower electrodes of the 3D phase change memory serve as the information input terminal, and they are convolved after passing through the respective phase change unit arrays, and the result of the convolution operation is superposed on the middle electrode in the form of current, thereby obtaining the sum of the convolution calculation results of the input information of the upper and lower electrodes, such that the 3D convolution operation is completed in one step.

Abstract: The disclosure belongs to the field of microelectronics, and specifically, relates to a method of inducing crystallization of a chalcogenide phase-change material and application thereof. To be specific, a dielectric material is brought into contact with an interface of the chalcogenide phase-change material. The dielectric material is in an octahedral configuration, and the dielectric material provides a crystal nucleus growth center for the crystallization of the chalcogenide phase-change material at the interface between the two, so as to induce the phase-change material to accelerate the crystallization. The method is further applied in a phase-change memory cell. Among all the dielectric material layers in contact with the chalcogenide phase-change material layer, the dielectric material structure of at least one side of the dielectric material layer is an octahedral configuration.

Abstract: An operating method for improving the performance of a selector device is provided, including: determining and applying a direct current (DC) or alternating current (AC) operating voltage and a limit current of the selector device, so that the selector device circulates until a off-state resistance is reduced; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is reduced to a minimum value; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is increased; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is increased to a maximum value; and adjusting the operating voltage and the limit current, and performing DC or AC operation pulsed operation on a selector.

Abstract: The disclosure belongs to the technical field of microelectronic devices and memories, and discloses a three-dimensional stacked phase change memory and a preparation method thereof. The preparation method includes: preparing a multilayer structure in which horizontal electrode layers and insulating layers are alternately stacked, then performing etching to form trenches and separated three-dimensional strip electrodes, next filling the trenches with an insulating medium, and then forming small holes at the boundary region between the three-dimensional strip electrodes and the insulating medium, thereafter sequentially depositing a phase change material on the walls of the small holes, and filling the small holes with an electrode material to prepare vertical electrodes, so as to obtain a three-dimensional stacked phase change memory stacked in multiple layers.

Abstract: A method and device for testing the thermal conductivity of a nanoscale material 1. The method comprises the following steps: preparing or placing a nanoscale material 1 to be tested on a substrate and plating an electrode 2 at both ends thereof; determining a resistance temperature coefficient R? of the nanoscale material 1 to be tested and a resistance R0 at the ambient temperature T0; generating a small signal voltage V3? with a frequency being 3? on the nanoscale material 1 to be tested; and measuring the small signal voltage V3?, and in conjunction with each piece of test data, calculating, according to a formula, the thermal conductivity ? of the nanoscale material to be tested 1 at the ambient temperature T0.

Abstract: The disclosure discloses a three-dimensional stacked memory and a preparation method thereof. The storage unit adopts a constrained structure phase change storage unit, and uses a crossbar storage array structure to build a large-capacity storage array. The preparation method includes: preparing N first strip-shaped electrodes along a crystal direction on a substrate; preparing a first insulating layer with M*N array of through holes; filling the M*N array of through holes of the first insulating layer with a phase change material to form first phase change units; preparing M second strip-shaped electrodes; preparing a second insulating layer, using spin-coated photoresist as a sacrificial material, performing a local planarization on the surface of the second insulating layer; forming M*N array of through holes on the second insulating layer; filling a phase change material to form second phase change units; preparing N third strip-shaped electrodes to form a two-layer stacked phase change memory.

Abstract: The disclosure provides a method for measuring the transverse thermal conductivity of a thin film. The method comprises the steps of measuring the longitudinal thermal conductivity of a thin film to be measured by using a 3? method and by taking a second metal strip deposited on the surface of the thin film to be measured as a heating source at first; measuring the temperature rise of the thin film to be measured in the longitudinal direction by using the 3? method, and deducing the thermal power of the thin film to be measured in the longitudinal direction; and finally, calculating the transverse thermal conductivity of the thin film to be measured. By adopting a ‘substrate/thin film to be measured/metal strip’ sample structure, the process difficulty of preparing a suspension structure sample can be effectively avoided.