Patents by Inventor Hao-Tung CHUNG

Hao-Tung CHUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230411388
    Abstract: An IC structure includes a first transistor, a dielectric layer, a plurality of semiconductor pillars, a plurality of semiconductor plugs, a semiconductor structure, and a second transistor. The first transistor is formed on a substrate. The dielectric layer is above the first transistor. The semiconductor pillars extend from the substrate into the dielectric layer. The semiconductor plugs extend from a top surface of the dielectric layer into the dielectric layer to the plurality of semiconductor pillars. The semiconductor structure is disposed over the top surface of the dielectric layer. The second transistor is formed on the semiconductor structure.
    Type: Application
    Filed: June 17, 2022
    Publication date: December 21, 2023
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., National Yang Ming Chiao Tung University
    Inventors: Chenming HU, Kuan-Neng CHEN, Po-Tsang HUANG, Hao-Tung CHUNG, Bo-Jheng SHIH, Yu-Ming PAN