Abstract: Provided is a system for detecting an anomaly in a multivariate time series that includes at least one processor programmed or configured to receive a dataset of a plurality of data instances, wherein each data instance comprises a time series of data points, determine a set of target data instances based on the dataset, determine a set of historical data instances based on the dataset, generate, based on the set of target data instances, a true value matrix, a true frequency matrix, and a true correlation matrix, generate a forecast value matrix, a forecast frequency matrix, and a forecast correlation matrix based on the set of target data instances and the set of historical data instances, determine an amount of forecasting error, and determine whether the amount of forecasting error corresponds to an anomalous event associated with the dataset of data instances. Methods and computer program products are also provided.

Abstract: A halide material having general formula ArMAX is disclosed. The halide material can be processed to an optoelectronic film with a halogenated formamidine and a lead halide, and the optoelectronic film can be applied in the manufacture of an optoelectronic device like a perovskite laser or a PeLED. Experimental data have proved that, the fabricated optoelectronic film shows a property of photoluminescence (PL) peak wavelength adjustable. Moreover, the PL peak wavelength moves from 482 nm to 534 nm with the increase of the content of lead (Pb), halogen (X) and formamidine (FA) in the optoelectronic film. Furthermore, experimental data have also indicated that, the fabricated optoelectronic film can be used as a blue emissive layer, a red emissive layer or a green emissive layer, thereby having a significant potential for application in optoelectronics industry.

Abstract: A halide material having general formula ArMAX is disclosed. The halide material can be processed to an optoelectronic film with a halogenated formamidine and a lead halide, and the optoelectronic film can be applied in the manufacture of an optoelectronic device like a perovskite laser or a PeLED. Experimental data have proved that, the fabricated optoelectronic film shows a property of photoluminescence (PL) peak wavelength adjustable. Moreover, the PL peak wavelength moves from 482 nm to 534 nm with the increase of the content of lead (Pb), halogen (X) and formamidine (FA) in the optoelectronic film Furthermore, experimental data have also indicated that, the fabricated optoelectronic film can be used as a blue emissive layer, a red emissive layer or a green emissive layer, thereby having a significant potential for application in optoelectronics industry.

Abstract: Disclosures of the present invention describe a halide semiconductor memristor that is suitable for being as an artificial synapse. The halide semiconductor memristor comprises a first electrode layer, an active layer and a second electrode layer, wherein the active layer comprises a first oxide semiconductor film formed on the first electrode layer, a halide semiconductor film formed on the first oxide semiconductor film, and a second oxide semiconductor film formed on the halide semiconductor film Moreover, a variety of experimental data have proved that, this halide semiconductor memristor is indeed suitable for being adopted as a plurality of artificial synapses that are used in manufacture of a neuromorphic device, and exhibits many advantages, including: capable of being driven by a low operation voltage, having a multi-stage adjustable resistance state, and a wide dynamic range of the switching resistance states.

Abstract: Disclosures of the present invention describe a halide semiconductor memristor that is suitable for being as an artificial synapse. The halide semiconductor memristor comprises a first electrode layer, an active layer and a second electrode layer, wherein the active layer comprises a first oxide semiconductor film formed on the first electrode layer, a halide semiconductor film formed on the first oxide semiconductor film, and a second oxide semiconductor film formed on the halide semiconductor film Moreover, a variety of experimental data have proved that, this halide semiconductor memristor is indeed suitable for being adopted as a plurality of artificial synapses that are used in manufacture of a neuromorphic device, and exhibits many advantages, including: capable of being driven by a low operation voltage, having a multi-stage adjustable resistance state, and a wide dynamic range of the switching resistance states.

Abstract: A method of preparing perovskite quantum dots is provided. The method includes: adding an organic ligand into a first precursor solution prepared by a first halide and a second halide to form a second precursor solution, or adding the organic ligand into a first poor solvent to form a second poor solvent; spraying the first precursor solution into the second poor solvent or spraying the second precursor solution into the first poor solvent by a spraying method to obtain a mixed solution including first perovskite quantum dots and second quantum dots; centrifuging the mixed solution to obtain supernatant and precipitate; and obtaining the first perovskite quantum dots and the second perovskite quantum dots from the supernatant and the precipitate, respectively. The first perovskite quantum dots are different from the second perovskite quantum dots.

Abstract: Differing from conventional technology utilizing double-layer electron transport layer (ETL) to improving power conversion efficiency of perovskite solar cell, the present invention discloses a novel electron transport structure comprising an interfacial diploe moment enhancing layer, an electron transport layer and an interfacial layer. After applying this electron transport structure in a perovskite solar cell, it is found that an interfacial dipole moment formed between the electron transport layer of the electron transport structure and an active layer of the perovskite solar cell is amplified, so as to give rise to an enhanced driving force for the separation of photogenerated carriers and accelerating charge extraction.

Abstract: Compared to traditional ITO transparent substrate showing drawbacks of high sheet resistance, poor flexibility and high manufacturing cost, the present invention mainly discloses a transparent conductive film fabricated by sequentially forming a wetting layer and an ultra-thin metal layer onto a transparent substrate, wherein the transparent conductive film includes advantages of low sheet resistance, high transmittance, great flexibility, and low manufacturing cost. Moreover, a variety of experiment data have proved that, this novel transparent conductive film can not only be applied in the fabrication of some electro-optical devices such as organic solar cell and OLED, but also helpful to the enhancement of the fundamental and essential characteristics of the electro-optical devices.

Abstract: A method of fabricating a perovskite solar cell includes forming a hole transport layer on a transparent electrically conductive substrate, and forming a perovskite layer on the hole transport layer via a two-stage vacuum evaporation process. Then, an electron transport layer and an electrode layer are formed in order. The two-stage vacuum evaporation process includes first vacuum evaporating a first material on the hole transport layer and then vacuum evaporating a second material on the first material so as to react the first material with the second material in situ and form the perovskite layer.

Abstract: A method of fabricating a perovskite solar cell includes forming a hole transport layer on a transparent electrically conductive substrate, and forming a perovskite layer on the hole transport layer via a two-stage vacuum evaporation process. Then, an electron transport layer and an electrode layer are formed in order. The two-stage vacuum evaporation process includes first vacuum evaporating a first material on the hole transport layer and then vacuum evaporating a second material on the first material so as to react the first material with the second material in situ and form the perovskite layer.

Abstract: A conductive structure comprises a plurality of first nanowires and a plurality of second nanowires. The first nanowires extend along a first direction substantially. The second nanowires extend along a second direction substantially, and at least a part of the second nanowires electrical connect to the first nanowires. The included angle between the first and second directions is nonzero. A manufacturing method of the conductive structure is also disclosed.

Abstract: An organic solar cell includes a conductive substrate, an organic material, and two metal layers. The conductive substrate includes an electrode. The organic material is disposed above the conductive substrate. The metal layers are disposed above the organic material, and a gap is configured between the two metal layers. The width of the gap is between 1 nm and 5000 nm.

Abstract: Provided are compounds with a donor moiety, a first acceptor moiety and a second acceptor moiety, as shown by Formula (I): With the unique molecular design, compounds of Formula (I) can provide a desirable power conversion efficiency. Moreover, this invention also provides organic thin-film solar cells comprising the above-mentioned compounds.

Abstract: A method for manufacturing an organic electronic component is provided. The method includes steps of providing a substrate and an organic material; coating the organic material onto the substrate; heating the substrate to form a first carrier transport layer; doping a material having a metal ion to an organic solvent to form an organic solution; and applying the organic solution onto the first carrier transport layer to form a second carrier transport layer.

Abstract: A method for manufacturing an organic electronic component is provided. The method includes steps of providing a substrate and an organic material; coating the organic material onto the substrate; heating the substrate to form a first carrier transport layer; doping a material having a metal ion to an organic solvent to form an organic solution; and applying the organic solution onto the first carrier transport layer to form a second carrier transport layer.

Abstract: Provided are compounds with a donor moiety, a first acceptor moiety and a second acceptor moiety, as shown by Formula (I): With the unique molecular design, compounds of Formula (I) can provide a desirable power conversion efficiency. Moreover, this invention also provides organic thin-film solar cells comprising the above-mentioned compounds.

Abstract: A method and device in which the light emitted from a color sub-pixel in an organic light emitted display panel can be the sum of two or more light beams of slightly different colors in the same wavelength range. The difference in color is the result of difference in the length of the resonant cavity within the same color sub-pixel. In the manufacturing process, the non-uniformity in the layer thickness can cause a shift in the color coordinates in the color sub-pixels. The color shift when the width of the color spectrum is narrow is more noticeable. By broadening the width of the color spectrum, the color shift would become less appreciable. Thus, broadening the width of the color spectrum would ease the strict requirements in manufacturing.

Abstract: A method and device in which the light emitted from a color sub-pixel in an organic light emitted display panel can be the sum of two or more light beams of slightly different colors in the same wavelength range. The difference in color is the result of difference in the length of the resonant cavity within the same color sub-pixel. In the manufacturing process, the non-uniformity in the layer thickness can cause a shift in the color coordinates in the color sub-pixels. The color shift when the width of the color spectrum is narrow is more noticeable. By broadening the width of the color spectrum, the color shift would become less appreciable. Thus, broadening the width of the color spectrum would ease the strict requirements in manufacturing.

Abstract: The present invention discloses synthesis of 2,2?-disubstituted 9,9?-spirobifluorene-based triaryldiamine. First, 2,2?-diamino-9,9?-spirobifluorene, a Pd-catalyst as auxiliary and aryl halide BX are provided, wherein X is selected from the group consisting of: Cl, Br and I, B comprises one of the following group: aryl moiety, hetero cycle, multiple fused ring, multiple fused ring with hetero atom(s). Next, a substitution reaction is performed to react the 2,2?-diamino-9,9?-spirobifluorene with the aryl halide BX to produce the 2,2?-disubstituted 9,9?-spirobifluorene-based triaryldiamines. In addition, the present invention discloses organic light emitting devices comprising hole transporting material comprising 2,2?-bis(N,N-disubstituted amino)-9,9?-spirobifluorenes.

Abstract: The present invention discloses synthesis of 2,2?-disubstituted 9,9?-spirobifluorene-based triaryldiamine. First, 2,2?-diamino-9,9?-spirobifluorene, a Pd-catalyst as auxiliary and aryl halide BX are provided, wherein X is selected from the group consisting of: Cl, Br and I, B comprises one of the following group: aryl moiety, hetero cycle, multiple fused ring, multiple fused ring with hetero atom(s). Next, a substitution reaction is performed to react the 2,2?-diamino-9,9?-spirobifluorene with the aryl halide BX to produce the 2,2?-disubstituted 9,9?-spirobifluorene-based triaryldiamines. In addition, the present invention discloses organic light emitting devices comprising hole transporting material comprising 2,2?-bis(N,N-disubstituted amino)-9,9?-spirobifluorenes.