Abstract: A method according to the present disclosure includes providing a workpiece including a first fin-shaped structure and a second fin-shaped structure over a substrate, depositing a nitride liner over the substrate and sidewalls of the first fin-shaped structure and the second fin-shaped structure, forming an isolation feature over the nitride liner and between the first fin-shaped structure and the second fin-shaped structure, epitaxially growing a cap layer on exposed surfaces of the first fin-shaped structure and the second fin-shaped structure and above the nitride liner, crystalizing the cap layer, and forming a first source/drain feature over a first source/drain region of the first fin-shaped structure and a second source/drain feature over a second source/drain region of the second fin-shaped structure.

Abstract: A semiconductor structure including the following components is provided. Stack structures are located on a substrate and separated from each other. Isolation layers are located on the sidewalls of the stack structures. A contact is located on the substrate between two adjacent isolation layers. A landing pad is located on the contact. The landing pad is located on one of the two adjacent isolation layers. There is an opening on one side of the landing pad. A first dielectric layer is located in the opening. A porous dielectric layer is located between the first dielectric layer and the landing pad. The top surface of the porous dielectric layer is lower than the top surface of the landing pad and the top surface of the first dielectric layer to form a recess between the landing pad and the first dielectric layer. The recess exposes the sidewall of the landing pad.

Abstract: Aspects relate to sharing a channel occupancy time (COT) initiated by a network access node (e.g., a base station) with one or more wireless communication devices for sidelink communication between the wireless communication devices. In this example, the network access node can transmit a COT structure indication (COT-SI) to the wireless communication device(s) indicating the COT resources (e.g., time and frequency resources) of the COT that may be shared with sidelink. In some examples, the wireless communication device can receive a message from the network access node including a COT sharing indicator indicating whether COT sidelink sharing is enabled or disabled.

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.

Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: A light scattering probe includes an arm segment, a main segment located at one side of the arm segment, and a testing segment connected to another side of the arm segment. The main segment has a soldering end portion and an extending end portion respectively located at two opposite sides thereof along a predetermined direction. The testing segment has an upright shape along the predetermined direction and includes a pinpoint portion and an upright portion that connects the pinpoint portion and the arm segment. The upright portion has a roughened surface arranged on an entirety of an outer surface thereof. The roughened surface has an arithmetic average roughness (Ra) within a range from 0.1 ?m to 1 ?m. Through the roughened surface, the testing segment only forms an observation point at the pinpoint portion in an observation process of a detection apparatus.

Abstract: A cantilever probe module includes a plurality of first probes and a plurality of second probes. Each of the first probes includes a first arm segment, a first main segment, and a first testing segment, the latter two of which are respectively connected to two ends of the first arm segment. Each of the second probes includes a second arm segment, an extending segment and a second testing segment both respectively connected to two ends of the second arm segment, and a second main segment that is connected to the extending segment. A height of the extending segment is 5% to 50% of a height of the second main segment. When the first main segments of the first probes and the second main segments of the second probes are staggeredly fixed onto a substrate, the first testing segments and the second testing segments are arranged in one row.

Abstract: A solder receiving probe includes an arm segment, a main segment located at one side of the arm segment, and a testing segment connected to another side of the arm segment. The main segment has a soldering end portion and an extending end portion respectively located at two opposite sides thereof along a predetermined direction. The main segment has a plurality of solder receiving holes that are arranged along a top edge of the soldering end portion and that are arranged in one row along an extending direction perpendicular to the predetermined direction. Any two of the solder receiving holes adjacent to each other are provided with one inner supporting arm therebetween. Each of the solder receiving holes can receive a solder, so that the solder does not climb across the solder receiving holes of the one row along the predetermined direction.

Abstract: A light absorption probe includes an arm segment, a main segment located at one side of the arm segment, a testing segment connected to another side of the arm segment, and a light absorption coating layer. The main segment has a soldering end portion and an extending end portion respectively located at two opposite sides thereof along a predetermined direction. The testing segment has an upright shape along the predetermined direction and includes a pinpoint portion and an upright portion that connects the pinpoint portion and the arm segment. The light absorption coating layer covers the upright portion, and the pinpoint portion is exposed from the light absorption coating layer. Through the light absorption coating layer, the testing segment only forms an observation point at the pinpoint portion in an observation process of a detection apparatus.

Abstract: A semiconductor device structure includes nanostructures disposed over a substrate. The structure also includes a gate structure surrounding the nanostructures. The structure also includes inner spacers disposed over opposite sides of the gate structure. The structure also includes source/drain epitaxial structure disposed over opposite sides of the nanostructures. An air gap is disposed between the inner spacers and the source/drain epitaxial structure.

Abstract: A chimeric antigen receptor (CAR), containing a BCMA (B cell maturation antigen) binding domain. The BCMA binding domain includes an antibody or an antigen-binding fragment of an antibody that specifically binds to BCMA. The antibody contains a heavy-chain complementarity determining region 3 (HCDR3), a heavy-chain complementarity determining region 2 (HCDR2), and a heavy-chain complementarity determining region 1 (HCDR1). The HCDR3 contains an amino acid sequence as set forth in SEQ ID NO: 25, the HCDR2 contains an amino acid sequence as set forth in SEQ ID NO: 41, and the HCDR1 contains an amino acid sequence as set forth in SEQ ID NO: 21.

Abstract: A micro electro mechanical system (MEMS) probe includes an arm segment, a main segment, and a testing segment. The main segment is arranged at one side of the arm segment, the main segment defines a layout region arranged inside of an outer contour thereof, and the main segment has a soldering end portion and an extending end portion respectively arranged at two opposite sides of the distribution region along a predetermined direction. The testing segment has an upright shape along the predetermined direction and is connected to another side of the arm segment. The layout region has a plurality of thru-holes that occupy 3% to 70% of a region surroundingly defined by the outer contour. The layout region is spaced apart from the outer contour by a layout spacing that is less than or equal to an inner diameter of any one of the thru-holes.

Abstract: A climb-restricting probe includes an arm segment, a main segment located at one side of the arm segment, a testing segment connected to another side of the arm segment, and a climb-restricting ring. The main segment has a soldering end portion and an extending end portion respectively located at two opposite sides thereof along a predetermined direction. The testing segment has an upright shape along the predetermined direction. The climb-restricting ring surrounds the main segment along a top edge of the soldering end portion and protrudes from an outer surface of the main segment. The climb-restricting ring has a restriction height along the predetermined direction. The restriction height is within a range from 3 ?m to 50 ?m. The climb-restricting ring can block a solder from climbing past the climb-restricting ring along the predetermined direction.

Abstract: The present invention includes a method and apparatus providing an ongoing and real time indicator for prediction of health conditions during the usual lifetime of a person by providing an ongoing and real time indicator for predicting remaining lifetimes for one or more patients comprising: providing a monitoring system connected to the cloud, a Wi-Fi or Bluetooth network which is connected to a wearable device; and providing a wearable device which contains one or more accelerometers, temperature monitoring devices, EKG monitoring devices and other useful devices; wherein the wearable device is powered internally by a battery or other such appropriate energy sources.

Abstract: A system and method for determining a critical suspension speed of an impeller in a solid-liquid stirred tank belongs to the technical field of critical speed determination. A relationship is established between a voltage of a measurement electrode and a solid-liquid suspension state to avoid the problems of strong subjectivity and large deviation appearing in existing critical suspension speed determination based on empirical formulas and human eye observation. An electrode voltage ratio is taken as a determination criterion, which is only related to a spatial density of solid particles in a liquid phase.

Abstract: A solar cell, a manufacturing method therefor, and a photovoltaic module are provided. The solar cell includes a substrate having a front surface and a rear surface, a passivation stack disposed on the front surface, and a tunneling oxide layer and a doped conductive layer disposed on the rear surface. The passivation stack includes an oxygen-containing dielectric layer, a first passivation layer and a second passivation layer. The first passivation layer includes a first interface adjacent to the oxygen-containing dielectric layer and a second interface adjacent to the second passivation layer, the second passivation layer includes a third interface opposite to the second interface, a nitrogen content and a silicon content at the second interface are higher than those at the first interface and the third interface, respectively, and an oxygen content at the second interface is lower than that at the first interface and the third interface, respectively.

Abstract: A device and a method for measuring a rotation angle of a spherical hinge joint with a football-shaped structure are provided. The measuring device includes a driving electrode, and an induction electrode system. During measurement, the driving electrode and induction electrode system are both installed in a measured spherical hinge joint. The spherical hinge joint includes a ball socket base, and a ball head installed in the ball socket base. The driving electrode is fixed to the ball head. The induction electrode system includes multiple regular hexagonal spherical electrode plates, and one or more regular pentagonal spherical electrode plates. Five regular hexagonal spherical electrode plates are all arranged around any one regular pentagonal spherical electrode plate, respective regular hexagonal spherical electrode plates and respective regular pentagonal spherical electrode plate are assembled to form a spherical shell structure.

Abstract: An embodiment of the invention provides a data authentication device. The data authentication device may include a main memory, a backup memory, a platform control hub (PCH) and an embedded controller (EC). The main memory may be configured to store data. The backup memory may be configured to back up the data stored in the main memory. The PCH is coupled to the main memory and generates a write command to write a first data image to the main memory, wherein the first data image comprises updated data and a digital signature. The EC is coupled to the main memory, the backup memory and the PCH and obtains the first data image from the PCH. When the EC detects a write command, the EC may perform an authentication for the updated data based on the first data image or a second data image corresponding to the first data image.

Abstract: Examples of the present application disclose a semiconductor device and a fabrication method thereof and a memory system. The semiconductor device includes: a stack structure including first regions and second regions; channel structures that are located in the first regions and penetrate through the stack structure along a first direction; and gate line isolation structures that are located in the second regions and extend along a second direction, wherein the gate line isolation structures penetrate through the stack structure along the first direction and are in a concavo-convex shape along a third direction.

Abstract: A method includes providing a substrate having a first region and a second region, forming a fin protruding from the first region, where the fin includes a first SiGe layer and a stack alternating Si layers and second SiGe layers disposed over the first SiGe layer and the first SiGe layer has a first concentration of Ge and each of the second SiGe layers has a second concentration of Ge that is greater than the first concentration, recessing the fin to form an S/D recess, recessing the first SiGe layer and the second SiGe layers exposed in the S/D recess, where the second SiGe layers are recessed more than the first SiGe layer, forming an S/D feature in the S/D recess, removing the recessed first SiGe layer and the second SiGe layers to form openings, and forming a metal gate structure over the fin and in the openings.