Patents by Inventor Hao-Yi Tsai

Hao-Yi Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11322421
    Abstract: Provided is a package structure including a composite wafer, a plurality of dies, an underfill, and a plurality of dam structures. The composite wafer has a first surface and a second surface opposite to each other. The composite wafer includes a plurality of seal rings dividing the composite wafer into a plurality of packages; and a plurality of through holes respectively disposed between the seal rings and penetrating through the first and second surfaces. The dies are respectively bonded onto the packages at the first surface by a plurality of connectors. The underfill laterally encapsulates the connectors. The dam structures are disposed on the first surface of the composite wafer to separate the underfill from the through holes.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: May 3, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mao-Yen Chang, Chih-Wei Lin, Hao-Yi Tsai, Kuo-Lung Pan, Chun-Cheng Lin, Tin-Hao Kuo, Yu-Chia Lai, Chih-Hsuan Tai
  • Patent number: 11309225
    Abstract: A package structure and a method of manufacturing the same are provided. The package structure includes a die, a redistribution layer (RDL) structure, a through integrated fan-out via (TIV) and a conductive terminal. The RDL structure is disposed on and electrically connected to the die. The TIV is laterally aside the die and extends to contact a bottom surface and a sidewall of a redistribution layer of the RDL structure. The conductive terminal is electrically connected to the die through the RDL structure and the TIV.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: April 19, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsuan Tai, Chih-Hua Chen, Hao-Yi Tsai, Yu-Chih Huang, Chia-Hung Liu, Ting-Ting Kuo
  • Patent number: 11309294
    Abstract: A method includes forming a composite material layer over a carrier, the composite material layer including particles of a filler material incorporated into a base material, forming a set of through vias over a first side of the composite material layer, attaching a die over the first side of the composite material layer, the die being spaced apart from the set of through vias, forming a molding material over the first side of the composite material layer, the molding material least laterally encapsulating the die and the through vias of the set of through vias, forming a redistribution structure over the die and the molding material, the redistribution structure electrically connected to the through vias, forming openings in a second side of the composite material layer opposite the first side, and forming conductive connectors in the openings, the conductive connectors electrically connected to the through vias.
    Type: Grant
    Filed: August 2, 2019
    Date of Patent: April 19, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Kuo Lung Pan, Tin-Hao Kuo, Hao-Yi Tsai, Hsiu-Jen Lin, Hao-Jan Pei, Ching-Hua Hsieh
  • Patent number: 11309302
    Abstract: Manufacturing method of semiconductor package includes following steps. Bottom package is provided. The bottom package includes a die and a redistribution structure electrically connected to die. A first top package and a second top package are disposed on a surface of the redistribution structure further away from the die. An underfill is formed into the space between the first and second top packages and between the first and second top packages and the bottom package. The underfill covers at least a side surface of the first top package and a side surface of the second top package. A hole is opened in the underfill within an area overlapping with the die between the side surface of the first top package and the side surface of the second top package. A thermally conductive block is formed in the hole by filling the hole with a thermally conductive material.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: April 19, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Wei Chen, Chih-Hua Chen, Hsin-Yu Pan, Hao-Yi Tsai, Lipu Kris Chuang, Tin-Hao Kuo
  • Publication number: 20220108961
    Abstract: A semiconductor device has a top metal layer, a first passivation layer over the top metal layer, a first redistribution layer over the first passivation layer, a first polymer layer, and a first conductive via extending through the first polymer layer. The first polymer layer is in physical contact with the first passivation layer.
    Type: Application
    Filed: December 17, 2021
    Publication date: April 7, 2022
    Inventors: Chen-Hua Yu, Tin-Hao Kuo, Chung-Shi Liu, Hao-Yi Tsai
  • Publication number: 20220102314
    Abstract: A semiconductor package includes a redistribution structure, at least one semiconductor device, a heat dissipation component, and an encapsulating material. The at least one semiconductor device is disposed on and electrically connected to the redistribution structure. The heat dissipation component is disposed on the redistribution structure and includes a concave portion for receiving the at least one semiconductor device and an extending portion connected to the concave portion and contacting the redistribution structure, wherein the concave portion contacts the at least one semiconductor device. The encapsulating material is disposed over the redistribution structure, wherein the encapsulating material fills the concave portion and encapsulates the at least one semiconductor device.
    Type: Application
    Filed: December 13, 2021
    Publication date: March 31, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Wei Chen, Chih-Hua Chen, Hsin-Yu Pan, Hao-Yi Tsai, Lipu Kris Chuang, Tin-Hao Kuo
  • Publication number: 20220102283
    Abstract: A chip package including a first semiconductor die, a support structure and a second semiconductor die is provided. The first semiconductor die includes a first dielectric layer and a plurality of conductive vias, the first dielectric layer includes a first region and a second region, the conductive vias is embedded in the first region of the first dielectric layer; a plurality of conductive pillars is disposed on and electrically connected to the conductive vias. The second semiconductor die is stacked over the support structure and the second region of the first dielectric layer; and an insulating encapsulant encapsulates the first semiconductor die, the second semiconductor die, the support structure and the conductive pillars, wherein the second semiconductor die is electrically connected to the first semiconductor die through the conductive pillars.
    Type: Application
    Filed: December 9, 2021
    Publication date: March 31, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Lung Pan, Hao-Yi Tsai, Tin-Hao Kuo
  • Patent number: 11289373
    Abstract: A method includes the following steps. A seed layer is formed over a structure having at least one semiconductor die. A first patterned photoresist layer is formed over the seed layer, wherein the first patterned photoresist layer includes a first opening exposing a portion of the seed layer. A metallic wiring is formed in the first opening and on the exposed portion of the seed layer. A second patterned photoresist layer is formed on the first patterned photoresist layer and covers the metallic wiring, wherein the second patterned photoresist layer includes a second opening exposing a portion of the metallic wiring. A conductive via is formed in the second opening and on the exposed portion of the metallic wiring. The first patterned photoresist layer and the second patterned photoresist layer are removed. The metallic wiring and the conductive via are laterally wrapped around with an encapsulant.
    Type: Grant
    Filed: July 7, 2019
    Date of Patent: March 29, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Yuan Teng, Bor-Rung Su, De-Yuan Lu, Hao-Yi Tsai, Tin-Hao Kuo, Tzung-Hui Lee, Tai-Min Chang
  • Patent number: 11282785
    Abstract: A package includes a device die, and an encapsulating material encapsulating the device die therein. The encapsulating material has a top surface coplanar with a top surface of the device die. A coil extends from the top surface to a bottom surface of the encapsulating material, and the device die is in the region encircled by the coil. At least one dielectric layer is formed over the encapsulating material and the coil. A plurality of redistribution lines is in the at least one dielectric layer. The coil is electrically coupled to the device die through the plurality of redistribution lines.
    Type: Grant
    Filed: July 13, 2020
    Date of Patent: March 22, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Chiang-Jui Chu, Chung-Shi Liu, Hao-Yi Tsai, Ming Hung Tseng, Hung-Yi Kuo
  • Patent number: 11282791
    Abstract: A semiconductor device includes a first chip package, a heat dissipation structure and an adapter. The first chip package includes a semiconductor die laterally encapsulated by an insulating encapsulant, the semiconductor die has an active surface and a back surface opposite to the active surface. The heat dissipation structure is connected to the chip package. The adapter is disposed over the first chip package and electrically connected to the semiconductor die.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: March 22, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Yuan Teng, Hung-Yi Kuo, Hao-Yi Tsai, Tin-Hao Kuo, Yu-Chia Lai, Shih-Wei Chen
  • Publication number: 20220077024
    Abstract: A semiconductor device includes a chip package comprising a semiconductor die laterally encapsulated by an insulating encapsulant, the semiconductor die having an active surface, a back surface opposite to the active surface, and a thermal enhancement pattern on the back surface; and a heat dissipation structure connected to the chip package, the heat dissipation structure comprising a heat spreader having a flow channel for a cooling liquid, and the cooling liquid in the flow channel being in contact with the thermal enhancement pattern.
    Type: Application
    Filed: November 15, 2021
    Publication date: March 10, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Yuan Teng, Chen-Hua Yu, Hao-Yi Tsai, Kuo-Chung Yee, Tin-Hao Kuo, Shih-Wei Chen
  • Publication number: 20220077102
    Abstract: A semiconductor structure includes a semiconductor wafer, a first surface mount component, a second surface mount component and a first barrier structure. The first surface mount component is disposed on the semiconductor wafer, and electrically connected to the semiconductor wafer through a plurality of first electrical connectors. The second surface mount component is disposed on the semiconductor wafer, and electrically connected to the semiconductor wafer through a plurality of second electrical connectors, wherein an edge of the second surface mount component is overhanging a periphery of the semiconductor wafer. The first barrier structure is disposed on the semiconductor wafer in between the second electrical connectors and the edge of the second surface mount component, wherein a first surface of the first barrier structure is facing the second electrical connectors, and a second surface of the first barrier structure is facing away from the second electrical connectors.
    Type: Application
    Filed: September 10, 2020
    Publication date: March 10, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mao-Yen Chang, Chih-Wei Lin, Hao-Yi Tsai, Kuo-Lung Pan, Chun-Cheng Lin, Tin-Hao Kuo, Yu-Chia Lai, Chih-Hsuan Tai
  • Publication number: 20220067334
    Abstract: A fingerprint sensor package and method are provided. Embodiments include a sensor and a sensor surface material encapsulated within the fingerprint sensor package. An array of electrodes of the sensor are electrically connected using through vias that are located either in the sensor, in connection blocks separated from the sensor, or through connection blocks, or else connected through other connections such as wire bonds. A high voltage die is attached in order to increase the sensitivity of the fingerprint sensor.
    Type: Application
    Filed: November 9, 2021
    Publication date: March 3, 2022
    Inventors: Yu-Chih Huang, Chih-Hua Chen, Yu-Jen Cheng, Chih-Wei Lin, Yu-Feng Chen, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
  • Patent number: 11251119
    Abstract: A package structure includes a first semiconductor die, an insulating encapsulant, a plurality of first through insulator vias, a plurality of second through insulator vias, and a redistribution layer. The insulating encapsulant is encapsulating the first semiconductor die. The first through insulator vias are located in a central area of the insulating encapsulant surrounding the first semiconductor die. The second through insulator vias are located in a peripheral area of the insulating encapsulant surrounding the plurality of first through insulator vias located in the central area, wherein an aspect ratio of the plurality of second through insulator vias is greater than an aspect ratio of the plurality of first through insulator vias. The redistribution layer is disposed on the insulating encapsulant and electrically connected to the first semiconductor die, the plurality of first through insulator vias and the plurality of second through insulator vias.
    Type: Grant
    Filed: January 21, 2020
    Date of Patent: February 15, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsung-Yuan Yu, Cheng-Chieh Hsieh, Hung-Yi Kuo, Hao-Yi Tsai, Ming-Hung Tseng
  • Patent number: 11251644
    Abstract: A semiconductor device package is provided, including a semiconductor device, a molding material, and a conductive slot. The molding material surrounds the semiconductor device. The conductive slot is positioned over the molding material and having an opening and at least two channels connecting the opening to the edges of the conductive slot.
    Type: Grant
    Filed: May 6, 2020
    Date of Patent: February 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chen-Hua Yu, Hao-Yi Tsai, Tzu-Sung Huang, Ming-Hung Tseng, Hung-Yi Kuo
  • Patent number: 11251141
    Abstract: A package structure includes a semiconductor device, a molding compound, a first dielectric layer, and a through-via. The molding compound is in contact with a sidewall of the semiconductor device. The first dielectric layer is over the molding compound and the semiconductor device. The through-via is in the molding compound and the first dielectric layer. The through-via is a continuous element and in contact with the first dielectric layer.
    Type: Grant
    Filed: May 31, 2020
    Date of Patent: February 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Hsuan Tai, Ting-Ting Kuo, Yu-Chih Huang, Chih-Wei Lin, Hsiu-Jen Lin, Chih-Hua Chen, Ming-Da Cheng, Ching-Hua Hsieh, Hao-Yi Tsai, Chung-Shi Liu
  • Patent number: 11244906
    Abstract: A package structure including a first semiconductor die, a second semiconductor die, first conductive pillars and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure and a first redistribution circuit structure. The semiconductor substrate includes a first portion and a second portion disposed on the first portion. The interconnect structure is disposed on the second portion, the first redistribution circuit structure is disposed on the interconnect structure, and the lateral dimension of the first portion is greater than the lateral dimension of the second portion. The second semiconductor die is disposed on the first semiconductor die. The first conductive pillars are disposed on the first redistribution circuit structure of the first semiconductor die. The first insulating encapsulation is disposed on the first portion.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: February 8, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzu-Sung Huang, Cheng-Chieh Hsieh, Hsiu-Jen Lin, Hui-Jung Tsai, Hung-Yi Kuo, Hao-Yi Tsai, Ming-Hung Tseng, Yen-Liang Lin, Chun-Ti Lu, Chung-Ming Weng
  • Publication number: 20220037228
    Abstract: A package structure includes a bottom plate, a semiconductor package, a top plate, a screw and an anti-loosening coating. The semiconductor package is disposed over the bottom plate. The top plate is disposed over the semiconductor package, and includes an internal thread in a screw hole of the top plate. The screw penetrates through the bottom plate, the semiconductor package and the top plate, and includes an external thread. The external thread of the screw is engaged to the internal thread of the top plate, and the anti-loosening coating is adhered between the external thread and the internal thread.
    Type: Application
    Filed: July 29, 2020
    Publication date: February 3, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Chia Lai, Chen-Hua Yu, Chung-Shi Liu, Hsiao-Chung Liang, Hao-Yi Tsai, Chien-Ling Hwang, Kuo-Lung Pan, Pei-Hsuan Lee, Tin-Hao Kuo, Chih-Hsuan Tai
  • Patent number: 11239135
    Abstract: A package structure includes a semiconductor die, a redistribution circuit structure, and a metallization element. The semiconductor die has an active side and an opposite side opposite to the active side. The redistribution circuit structure is disposed on the active side and is electrically coupled to the semiconductor die. The metallization element has a plate portion and a branch portion connecting to the plate portion, wherein the metallization element is electrically isolated to the semiconductor die, and the plate portion of the metallization element is in contact with the opposite side.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: February 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Wei Chen, Hao-Yi Tsai, Kuo-Lung Pan, Tin-Hao Kuo, Po-Yuan Teng, Chi-Hui Lai
  • Publication number: 20220013422
    Abstract: Provided is a package structure including a composite wafer, a plurality of dies, an underfill, and a plurality of dam structures. The composite wafer has a first surface and a second surface opposite to each other. The composite wafer includes a plurality of seal rings dividing the composite wafer into a plurality of packages; and a plurality of through holes respectively disposed between the seal rings and penetrating through the first and second surfaces. The dies are respectively bonded onto the packages at the first surface by a plurality of connectors. The underfill laterally encapsulates the connectors. The dam structures are disposed on the first surface of the composite wafer to separate the underfill from the through holes.
    Type: Application
    Filed: July 9, 2020
    Publication date: January 13, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Mao-Yen Chang, Chih-Wei Lin, Hao-Yi Tsai, Kuo-Lung Pan, Chun-Cheng Lin, Tin-Hao Kuo, Yu-Chia Lai, Chih-Hsuan Tai