Patents by Inventor Haohua MA

Haohua MA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240213197
    Abstract: A nitride-based semiconductor device includes a nitride-based semiconductor wafer, a protecting layer, and a plurality of connecting bumps. The nitride-based semiconductor wafer comprises a plurality of nitride-based dies. Each of the nitride-based dies comprises a connecting surface and a plurality of connecting pads and the connecting pads are embedded in the connecting surface. The protecting layer is disposed on the connecting surfaces of the nitride-based dies. The connecting bumps are embedded in the protecting layer. Every connecting bump connects one of the connecting pads. Every connecting bump has a first polished plane, and the first polished plane is free from the protecting layer. A manufacturing method of nitride-based semiconductor device is also provided.
    Type: Application
    Filed: July 20, 2022
    Publication date: June 27, 2024
    Inventors: Haohua MA, Sichao LI
  • Publication number: 20240096726
    Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first nitride-based transistor, a second nitride-based transistor, and a thermal resistor. The first nitride-based transistor is disposed over the second nitride-based semiconductor layer and applies the 2DEG region as an own channel. The second nitride-based transistor is disposed over the second nitride-based semiconductor layer and applying the 2DEG region as an own channel. The temperature sensor is disposed over the second nitride-based semiconductor layer and between first and second nitride-based transistors. The temperature sensor is in a strip shape and at least turns twice in a region between first and second nitride-based transistors.
    Type: Application
    Filed: December 31, 2021
    Publication date: March 21, 2024
    Inventors: Haohua MA, Hehong WU, Sichao LI, Hui YAN