Abstract: A voltage regulator includes a power supply voltage node, a power supply reference node, an output node, a plurality of phase circuits, and a control circuit. Each phase circuit of the plurality of phase circuits includes at least one p-type transistor coupled to the power supply voltage node, at least one n-type transistor coupled to the power supply reference node, and an inductor including a first terminal coupled exclusively to the at least one p-type transistor and the at least one n-type transistor, and a second terminal coupled to the output node. The control circuit is configured to, responsive to a power state signal, enable a predetermined number of phase circuits of the plurality of phase circuits, and the inductors of the plurality of phase circuits are an entirety of the inductors of the voltage regulator coupled to the output node and include a same inductor type.

Abstract: A method includes: extracting a first current profile model corresponding to a System on Chip (SOC) at a first design stage of the SOC; determining that a first design data of an Integrated Voltage Regulator (IVR) and the SOC pass a first co-simulation based on the extracted first current profile model; extracting a second current profile model corresponding to the SOC at a second design stage of the SOC, the second design stage being subsequent to the first design stage; refining the first design data of the IVR to generate a second design data of the IVR; determining that the second design data of the IVR and the SOC pass a second co-simulation based on the extracted second current profile model.

Abstract: A voltage regulator includes a control circuit configured to output a plurality of enable signals, and a power stage including a plurality of phase circuits. Each phase circuit of the plurality of phase circuits includes a node, an inductor coupled between the node and an output node of the voltage regulator, a plurality of p-type transistors coupled between the node and a power supply node of the voltage regulator, and a plurality of n-type transistors coupled between the node and a reference node of the voltage regulator. Each phase circuit of the plurality of phase circuits is configured to, responsive to the plurality of enable signals, selectively couple the node to the power supply node through a first subset or all of the plurality of p-type transistors, and selectively couple the node to the reference node through a second subset or all of the plurality of n-type transistors.

Abstract: Homogeneous chiplets configurable both as a two-dimensional system or a three-dimensional system are described. An example chiplet system has a first homogeneous chiplet (HC) including a first integrated circuit (IC) die having a first logic block and a first memory that are interconnected via a first path for transfer of data signals between the first logic block and the first memory block. A second HC including a second IC die having a second logic block and a second memory block, interconnected via a second path for transfer of data signals between the second logic block and the second memory block, is stacked vertically on top of the first HC to provide a third path for transfer of data signals between the first logic block and the second memory block and a fourth path for transfer of data signals between the second logic block and the first memory block.

Abstract: A plurality of semiconductor devices are arranged in a stack. Individual semiconductor devices within the stack are selected by an identity signal sent into the stack. The signal is compared within each stack to a unique stack identifier stored within each of the semiconductor devices and, when the signal is the same as the unique stack identifier, the semiconductor device is selected while, when the signal is not the same as the unique stack identifier, the semiconductor device remains within the default bypass mode.

Abstract: A method includes: extracting a first current profile model corresponding to a System on Chip (SOC) at a first design stage of the SOC; determining that a first design data of an Integrated Voltage Regulator (IVR) and the SOC pass a first co-simulation based on the extracted first current profile model; extracting a second current profile model corresponding to the SOC at a second design stage of the SOC, the second design stage being subsequent to the first design stage; refining the first design data of the IVR to generate a second design data of the IVR; determining that the second design data of the IVR and the SOC pass a second co-simulation based on the extracted second current profile model.

Abstract: Three-dimensional integrated circuit (3DIC) systems with the heat spreader configured as a backside power plane are described. An example 3DIC system includes a top die having a first set of through-silicon vias (TSVs) and a bottom die having a second set of TSVs for providing power, signal, and ground connectivity for components formed within the top die and the bottom die, respectively. The 3DIC system further includes a heat spreader, formed above the top die, which is configured to not only dissipate heat associated with the 3DIC system but also to deliver power to the top die using through-dielectric vias (TDVs). The TDVs are formed in an area surrounding both the bottom die and the top die. In addition, none of the second set of TSVs formed in the bottom die is configured to deliver power to the components formed within the top die.

Abstract: Homogeneous chiplets configurable both as a two-dimensional system or a three-dimensional system are described. An example chiplet system has a first homogeneous chiplet (HC) including a first integrated circuit (IC) die having a first logic block and a first memory that are interconnected via a first path for transfer of data signals between the first logic block and the first memory block. A second HC including a second IC die having a second logic block and a second memory block, interconnected via a second path for transfer of data signals between the second logic block and the second memory block, is stacked vertically on top of the first HC to provide a third path for transfer of data signals between the first logic block and the second memory block and a fourth path for transfer of data signals between the second logic block and the first memory block.

Abstract: A plurality of semiconductor devices are arranged in a stack. Individual semiconductor devices within the stack are selected by an identity signal sent into the stack. The signal is compared within each stack to a unique stack identifier stored within each of the semiconductor devices and, when the signal is the same as the unique stack identifier, the semiconductor device is selected while, when the signal is not the same as the unique stack identifier, the semiconductor device remains within the default bypass mode.

Abstract: Systems, devices, and methods are described herein for measuring an impedance of a DUT using an integrated impedance measurement device. A system includes a plurality of measurement circuits, a FFT processor, and a controller. The measurement circuits are coupled to the DUTs. Each measurement circuit is configured to generate a clock signal for a respective DUT, detect a voltage of the respective DUT, and generate first voltage related data using the clock signal and the voltage. The FFT processor is coupled to the measurement circuits. The FFT processor is configured to convert the first voltage related data into second voltage related data using a fast Fourier transform for each measurement circuit. The controller is coupled to the measurement circuits and the FFT processor. The controller is configured to calculate an impedance using the second voltage related data for each measurement circuit and output the impedance to each DUT.

Abstract: Systems, devices, and methods are described herein for measuring an impedance of a DUT using an integrated impedance measurement device. A system includes a plurality of measurement circuits, a FFT processor, and a controller. The measurement circuits are coupled to the DUTs. Each measurement circuit is configured to generate a clock signal for a respective DUT, detect a voltage of the respective DUT, and generate first voltage related data using the clock signal and the voltage. The FFT processor is coupled to the measurement circuits. The FFT processor is configured to convert the first voltage related data into second voltage related data using a fast Fourier transform for each measurement circuit. The controller is coupled to the measurement circuits and the FFT processor. The controller is configured to calculate an impedance using the second voltage related data for each measurement circuit and output the impedance to each DUT.

Abstract: A semiconductor device includes an analog voltage regulator and an integrated circuit module. The analog voltage regulator generates a regulated output voltage. The integrated circuit module generates an analog sense voltage based on the regulated output voltage and includes integrated circuit dies, a first sensor, second sensors, and a digital voltage offset controller (DVOC). The first sensor generates a digital reference voltage based on an analog reference voltage. The second voltage sensors detect voltages at predetermined locations on the integrated circuit dies. The DVOC generates a digital offset voltage substantially equal to the difference between the digital reference voltage and the voltage detected by a selected one of the second voltage sensors. The regulated output voltage is based on an unregulated input voltage, the analog sense voltage, and the digital offset voltage.

Abstract: A semiconductor device includes an analog voltage regulator and an integrated circuit module. The analog voltage regulator generates a regulated output voltage. The integrated circuit module generates an analog sense voltage based on the regulated output voltage and includes integrated circuit dies, a first sensor, second sensors, and a digital voltage offset controller (DVOC). The first sensor generates a digital reference voltage based on an analog reference voltage. The second voltage sensors detect voltages at predetermined locations on the integrated circuit dies. The DVOC generates a digital offset voltage substantially equal to the difference between the digital reference voltage and the voltage detected by a selected one of the second voltage sensors. The regulated output voltage is based on an unregulated input voltage, the analog sense voltage, and the digital offset voltage.

Abstract: A device is disclosed. The device includes a first memory circuit and a processing circuit. The first memory circuit stores identifications of the device that are used to generate first hash data through a hash algorithm. The processing circuit is coupled to the first memory circuit and selects at least one bit of each of the identifications in sequence to form a bit sequence, generates second hash data through the hash algorithm based on the bit sequence and authenticates the device according to a comparison between the first hash data and the second hash data.

Abstract: A method includes: extracting a first current profile model corresponding to a System on Chip (SOC) at a first design stage of the SOC; determining that a first design data of an Integrated Voltage Regulator (IVR) and the SOC pass a first co-simulation based on the extracted first current profile model; extracting a second current profile model corresponding to the SOC at a second design stage of the SOC, the second design stage being subsequent to the first design stage; refining the first design data of the IVR to generate a second design data of the IVR; determining that the second design data of the IVR and the SOC pass a second co-simulation based on the extracted second current profile model.

Abstract: A device includes a first memory circuit and a processing circuit. The first memory circuit is configured to store first hash data. The processing circuit is coupled to the first memory circuit. The processing circuit is configured to: at least based on a volume of the device, define a size of a distinguishable identification (ID) and a size of second hash data; based on a combination of at least one bit of each of the distinguishable ID and IDs of the device, generate the second hash data; and compare the first hash data with the second hash data, in order to identify whether the device is tampered. A method is also discloses herein.

Abstract: Systems, devices, and methods are described herein for measuring an impedance of a DUT using an integrated impedance measurement device. A system includes a plurality of measurement circuits, a FFT processor, and a controller. The measurement circuits are coupled to the DUTs. Each measurement circuit is configured to generate a clock signal for a respective DUT, detect a voltage of the respective DUT, and generate first voltage related data using the clock signal and the voltage. The FFT processor is coupled to the measurement circuits. The FFT processor is configured to convert the first voltage related data into second voltage related data using a fast Fourier transform for each measurement circuit. The controller is coupled to the measurement circuits and the FFT processor. The controller is configured to calculate an impedance using the second voltage related data for each measurement circuit and output the impedance to each DUT.

Abstract: Homogeneous chiplets configurable both as a two-dimensional system or a three-dimensional system are described. An example chiplet system has a first homogeneous chiplet (HC) including a first integrated circuit (IC) die having a first logic block and a first memory that are interconnected via a first path for transfer of data signals between the first logic block and the first memory block. A second HC including a second IC die having a second logic block and a second memory block, interconnected via a second path for transfer of data signals between the second logic block and the second memory block, is stacked vertically on top of the first HC to provide a third path for transfer of data signals between the first logic block and the second memory block and a fourth path for transfer of data signals between the second logic block and the first memory block.

Abstract: A plurality of semiconductor devices are arranged in a stack. Individual semiconductor devices within the stack are selected by an identity signal sent into the stack. The signal is compared within each stack to a unique stack identifier stored within each of the semiconductor devices and, when the signal is the same as the unique stack identifier, the semiconductor device is selected while, when the signal is not the same as the unique stack identifier, the semiconductor device remains within the default bypass mode.

Abstract: A voltage regulator includes a control circuit configured to output a plurality of enable signals, and a power stage including a plurality of phase circuits. Each phase circuit of the plurality of phase circuits includes a node, an inductor coupled between the node and an output node of the voltage regulator, a plurality of p-type transistors coupled between the node and a power supply node of the voltage regulator, and a plurality of n-type transistors coupled between the node and a reference node of the voltage regulator. Each phase circuit of the plurality of phase circuits is configured to, responsive to the plurality of enable signals, selectively couple the node to the power supply node through a first subset or all of the plurality of p-type transistors, and selectively couple the node to the reference node through a second subset or all of the plurality of n-type transistors.