Abstract: The present application relates to a touch display panel and an electronic device. The touch display panel includes: a substrate; and a light-emitting unit layer locating on a side of the substrate comprising a cathode metal layer reused as a touch electrode layer and multiple light-emitting units arranged in an array; the light-emitting units each have a light-emitting cycle comprising a first time period and a second time period staggered from the first time period; the cathode metal layer accesses a touch drive signal when the light-emitting cycle is within the first time period, and the cathode metal layer accesses a display drive signal when the light-emitting cycle is within the second time period. The cathode metal layer according to the present application is reused as the touch electrode layer, and inputs different drive signals in different time periods, which can greatly reduce a thickness of the touch display panel.

Abstract: The present disclosure relates to a touch display panel and an electronic device. The touch display panel includes: a substrate; multiple display signal lines arranged on one side of the substrate to provide display signals; multiple touch induction electrodes arranged on one side of each of the display signal lines facing away from the substrate, stacked and arranged at intervals with the display signal lines, and the multiple touch induction electrodes and the multiple display signal lines have overlapped regions; and a shielding layer located between the touch induction electrodes and the display signal lines, at least a part located in the overlapped regions, and used to reduce signal interference between the touch induction electrodes and the display signal lines. Interference between display signals of the display signal lines and touch signals of the touch induction electrodes can be effectively prevent, and signal-to-noise ratio can be effectively increased.

Abstract: The present disclosure relates to a touch display panel and an electronic device. The touch display panel includes: a substrate; a light-emitting unit layer located on a side of the substrate and including a cathode metal layer; multiple touch induction electrodes arranged in an array and arranged on a side of the light-emitting unit layer facing away from the substrate; multiple touch signal lines, wherein each of the touch signal lines is electrically connected to one touch induction electrode, and the touch signal lines are located between the substrate and the cathode metal layer; and an encapsulation layer located on a surface of the touch induction electrodes facing away from the substrate and covering the touch induction electrode. The touch display panel according to the present disclosure is more integrated, and has a smaller thickness and reduces steps of a preparation process.

Abstract: Provided are a display screen, a display device and a manufacturing method thereof. The display device includes: substrate layer, first planarization layer, and thin film transistor layer stacked; and light emitting element provided on the first planarization layer; and an electrical connector is provided on a side of the light emitting element facing the thin film transistor layer, and the electrical connector is exposed from the first planarization layer and electrically connected to the thin film transistor layer. The first planarization layer is provided between the substrate layer and the thin film transistor layer, the light emitting element is provided on the first planarization layer, and the electrical connector of the light emitting element is exposed from the first planarization layer, so that the electrical connection between the thin film transistor layer and the light emitting element can be achieved by metal deposition and patterning on the electrical connector.

Abstract: The present disclosure discloses an electronic device, including backplane circuits, a plurality of conductive adhesive elements arranged on the backplane circuits at intervals, and a plurality of electronic components arranged on the plurality of conductive adhesive elements respectively. The backplane circuits are respectively electrically connected with the plurality of electronic components through the plurality of conductive adhesive elements. The present disclosure further discloses a manufacturing method used for manufacturing the above electronic device.

Abstract: The present disclosure discloses a flexible panel, including a base and a plurality of display modules, where the base includes a plurality of island regions arranged at intervals and a plurality of bridging regions separately used for connecting two adjacent island regions of the plurality of island regions, the plurality of display modules are arranged on the plurality of island regions respectively, two adjacent display modules of the plurality of display modules are connected by an electrical connector, and the plurality of electrical connectors are arranged on the plurality of bridging regions respectively; and each of the display modules includes a display circuit and a thin-film protection layer, and the thin-film protection layer covers the display circuit.

Abstract: The method includes providing a rigid base plate; forming an etch-stop layer on one side of the rigid base plate; forming a first flexible substrate on another side of the etch-stop layer; fabricating a plurality of stretchable circuits on the surface of the first flexible substrate facing away from the etch-stop layer; etching a first flexible substrate between two adjacent stretchable circuits to form a through hole; forming a first elastic layer that covers the plurality of stretchable circuits and fills the through hole; separating the rigid base plate and the etch-stop layer; and forming a second elastic layer opposite to the first elastic layer such that the plurality of stretchable circuits is encircled by the first and second elastic layers.

Abstract: The method for manufacturing a thin film transistor includes sequentially forming a gate electrode on a surface of a substrate, forming a gate insulating layer covering the surface of the substrate and the gate electrode, forming an active layer and an etching stop layer above the gate electrode, forming a metal layer including a first region covering the etching stop layer and a pair of second regions connecting both sides of the first region on the active layer, and forming a photosensitive layer on the metal layer; removing a portion of the photosensitive layer to expose a portion of the first region; removing the exposed portion of the first region with the remaining first region having a height same as the remaining photosensitive layer located at two opposite sides of the etching stop layer; and removing the remaining photosensitive layer.

Abstract: A thin film transistor (TFT) device is provided. The TFT device includes a first conductive layer including a gate electrode and a connection pad. The TFT device further includes a first dielectric layer covering the gate electrode, and a semiconductor layer disposed on the dielectric layer and overlapping the gate electrode. The TFT device further includes a second dielectric layer disposed on the semiconductor layer and the first dielectric layer so as to expose first and second portions of the semiconductor layer and the connection pad. The TFT device further includes a second conductive layer which includes a source electrode portion covering the first portion of the semiconductor layer; a pixel electrode portion extending to the source electrode portion; a drain electrode portion covering the second portion of the semiconductor layer; and an interconnection portion disposed on the connection pad and extending to the drain electrode portion.

Abstract: A thin film transistor (TFT) device is provided. The TFT device includes a first conductive layer including a gate electrode and a connection pad. The TFT device further includes a first dielectric layer covering the gate electrode, and a semiconductor layer disposed on the dielectric layer and overlapping the gate electrode. The TFT device further includes a second dielectric layer disposed on the semiconductor layer and the first dielectric layer so as to expose first and second portions of the semiconductor layer and the connection pad. The TFT device further includes a second conductive layer which includes a source electrode portion covering the first portion of the semiconductor layer; a pixel electrode portion extending to the source electrode portion; a drain electrode portion covering the second portion of the semiconductor layer; and an interconnection portion disposed on the connection pad and extending to the drain electrode portion.