Patents by Inventor Haopei Deng

Haopei Deng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11894809
    Abstract: Methods and devices for amplifying an input RF signal according to at least two gain-states is described. According to one aspect, a multi gain amplifier circuit including a low noise amplifier having a stack of transistors is used for amplification of the input RF signal. When switching from a low gain-state to a high gain-state, the drain-to-source voltage of the output transistor of the stack is increased to affect region of operation of the output transistor, and thereby reduce non-linearity at the output of the amplifier. When switching from the high gain-state to the low gain-state, the drain-to-source voltage of the input transistor of the stack is increased to affect region of operation of the input transistor, and thereby reduce non-linearity at the output of the amplifier.
    Type: Grant
    Filed: May 5, 2022
    Date of Patent: February 6, 2024
    Assignee: pSemi Corporation
    Inventors: Rong Jiang, Haopei Deng
  • Publication number: 20220337196
    Abstract: Methods and devices for amplifying an input RF signal according to at least two gain-states is described. According to one aspect, a multi gain amplifier circuit including a low noise amplifier having a stack of transistors is used for amplification of the input RF signal. When switching from a low gain-state to a high gain-state, the drain-to-source voltage of the output transistor of the stack is increased to affect region of operation of the output transistor, and thereby reduce non-linearity at the output of the amplifier. When switching from the high gain-state to the low gain-state, the drain-to-source voltage of the input transistor of the stack is increased to affect region of operation of the input transistor, and thereby reduce non-linearity at the output of the amplifier.
    Type: Application
    Filed: May 5, 2022
    Publication date: October 20, 2022
    Inventors: Rong Jiang, Haopei Deng
  • Patent number: 11329611
    Abstract: Methods and devices for amplifying an input RF signal according to at least two gain-states is described. According to one aspect, a multi gain amplifier circuit including a low noise amplifier having a stack of transistors is used for amplification of the input RF signal. When switching from a low gain-state to a high gain-state, the drain-to-source voltage of the output transistor of the stack is increased to affect region of operation of the output transistor, and thereby reduce non-linearity at the output of the amplifier. When switching from the high gain-state to the low gain-state, the drain-to-source voltage of the input transistor of the stack is increased to affect region of operation of the input transistor, and thereby reduce non-linearity at the output of the amplifier.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: May 10, 2022
    Assignee: pSemi Corporation
    Inventors: Rong Jiang, Haopei Deng
  • Patent number: 11025208
    Abstract: Methods and devices for amplifying a plurality of input RF signals based on a multi-input cascode configuration is described. Transistors of stages of the multi-input cascode configuration are connected according to a tree, where there is at least one cascode transistor that is connected to at least two transistors of a stage below. In one case the stage below is an input stage, and in another case the stage below is a cascode stage. Activation and deactivation of transistors of the stages provide different conduction paths between the input stage and an output stage.
    Type: Grant
    Filed: September 27, 2019
    Date of Patent: June 1, 2021
    Assignee: pSemi Corporation
    Inventors: Khushali Shah, Haopei Deng
  • Publication number: 20200287505
    Abstract: Methods and devices for amplifying an input RF signal according to at least two gain-states is described. According to one aspect, a multi gain amplifier circuit including a low noise amplifier having a stack of transistors is used for amplification of the input RF signal. When switching from a low gain-state to a high gain-state, the drain-to-source voltage of the output transistor of the stack is increased to affect region of operation of the output transistor, and thereby reduce non-linearity at the output of the amplifier. When switching from the high gain-state to the low gain-state, the drain-to-source voltage of the input transistor of the stack is increased to affect region of operation of the input transistor, and thereby reduce non-linearity at the output of the amplifier.
    Type: Application
    Filed: March 6, 2019
    Publication date: September 10, 2020
    Inventors: Rong Jiang, Haopei Deng
  • Publication number: 20200127617
    Abstract: Methods and devices for amplifying a plurality of input RF signals based on a multi-input cascode configuration is described. Transistors of stages of the multi-input cascode configuration are connected according to a tree, where there is at least one cascode transistor that is connected to at least two transistors of a stage below. In one case the stage below is an input stage, and in another case the stage below is a cascode stage. Activation and deactivation of transistors of the stages provide different conduction paths between the input stage and an output stage.
    Type: Application
    Filed: September 27, 2019
    Publication date: April 23, 2020
    Inventors: Khushali Shah, Haopei Deng
  • Patent number: 10461704
    Abstract: Methods and devices for amplifying a plurality of input RF signals based on a multi-input cascode configuration is described. Transistors of stages of the multi-input cascode configuration are connected according to a tree, where there is at least one cascode transistor that is connected to at least two transistors of a stage below. In one case the stage below is an input stage, and in another case the stage below is a cascode stage. Activation and deactivation of transistors of the stages provide different conduction paths between the input stage and an output stage.
    Type: Grant
    Filed: December 18, 2017
    Date of Patent: October 29, 2019
    Assignee: pSemi Corporation
    Inventors: Khushali Shah, Haopei Deng
  • Publication number: 20190190468
    Abstract: Methods and devices for amplifying a plurality of input RF signals based on a multi-input cascode configuration is described. Transistors of stages of the multi-input cascode configuration are connected according to a tree, where there is at least one cascode transistor that is connected to at least two transistors of a stage below. In one case the stage below is an input stage, and in another case the stage below is a cascode stage. Activation and deactivation of transistors of the stages provide different conduction paths between the input stage and an output stage.
    Type: Application
    Filed: December 18, 2017
    Publication date: June 20, 2019
    Inventors: Khushali Shah, Haopei Deng