Abstract: The present disclosure provides a flow guide cylinder lifting assembly, including a flow guide cylinder lifting component disposed on a water-cooling lateral arm and a lifting bolt, wherein the lifting bolt is disposed in the flow guide cylinder lifting component, a lower end of the lifting bolt extends downward through an opening of an upper heat-insulating cover of the flow guide cylinder, a lifting nut is disposed at an upper end of the lifting bolt, and the lifting nut is matched to the lifting bolt to raise or lower the flow guide cylinder.

Abstract: A suspended lifting device for diversion cylinder is provided, wherein the suspended lifting device includes a lifting beam connected to a surface of a water-cooling cross arm. A groove is provided on the lifting beam, and the groove is configured to receive a lifting bolt. A positioning plate is disposed on a bottom side of the lifting beam close to the water-cooling cross arm, and the positioning plate is configured to control an angle between the lifting beam and the water-cooling cross arm.

Abstract: The present invention discloses a method of preparing solar-grade silicon single crystals by using the Czochralski and float-zone process: in the equal-diameter growth process during the float-zone phase, under the control by the electric control system of a float-zone single crystal furnace, a downward-rotating motor alternates forward rotations and reverse rotations; said downward-rotating motor drives silicon single crystals to rotate by the preset forward angle or reverse angle. The present invention improves the radial resistivity variation of solar-grade silicon single crystals and solves the black heart problem with solar-grade silicon single crystals. Thus, the conversion efficiency of the solar cells manufactured using such solar-grade silicon single crystals can be increased.

Abstract: The invention discloses (110) dislocation-free monocrystalline silicon and its preparation and the graphite heating system used. The process for preparation is as follows: clearing furnace and tidy the heat field; loading furnace; vacuumizing and argon charging; heating raw material; crystal seeding; expanding shoulder; rotating shoulder: speeding up the speed of shoulder-expanding; equal diameter: after shoulder-rotating, stabilize the crystal growth speed; finishing: turning off the power of crucible, decreasing the drawing rate manually; turning off the furnace. The graphite heating system includes: upper insulation column, lower insulation column and hearth tray arranged from the top down to form the external shell, and the peripheral surface is a stepped structure, and the thickness of the insulation layer of the upper insulation column is 20-30 mm, the thickness of the insulation layer of the lower insulation column is 60-70 mm, and the thickness of the insulation layer of the hearth tray is 70-80 mm.