Patents by Inventor Haoquan Yan

Haoquan Yan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10541168
    Abstract: A system for determining an alignment of an edge ring on a substrate support includes a robot control module configured to control a robot to place the edge ring onto the substrate support and retrieve the edge ring from the substrate support. An alignment module is configured to determine a plurality of first positions of the edge ring on the robot prior to being placed onto the substrate support and determine a plurality of second positions of the edge ring on the robot subsequent to being retrieved from the substrate support. An edge ring position module configured to determine a centered position of the edge ring relative to the substrate support based on offsets between the plurality of first positions and the plurality of second positions.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: January 21, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Ali Sucipto Tan, Haoquan Yan, Marc Estoque, Damon Tyrone Genetti, Jon McChesney, Alexander Miller Paterson
  • Publication number: 20190341275
    Abstract: A method for performing a cleaning process in a processing chamber includes, without a substrate arranged on a substrate support of the processing chamber, supplying reactant gases in a side gas flow via side tuning holes of a gas distribution device to effect deposition of a coating on an edge ring of the substrate support. The side gas flow targets an outer region of the processing chamber above the edge ring, and the reactant gases are supplied at a first flow rate. The method further includes, while supplying the reactant gases via the side tuning holes, supplying inert gases in a center gas flow via center holes of the gas distribution device. The inert gases are supplied at a second flow rate that is greater than the first flow rate.
    Type: Application
    Filed: May 7, 2018
    Publication date: November 7, 2019
    Inventors: Yansha JIN, Zhongkui Tan, Tyler Kent, Haoquan Yan, Qian Fu, Anthony Contreras
  • Publication number: 20190013232
    Abstract: An edge ring is configured to be raised and lowered relative to a pedestal, via one or more lift pins, in a processing chamber of a substrate processing system. The edge ring includes an upper surface, an annular inner diameter, an annular outer diameter, a lower surface, and at least one feature arranged in the lower surface of the edge ring. At least one inner surface of the at least one feature is sloped.
    Type: Application
    Filed: September 14, 2018
    Publication date: January 10, 2019
    Inventors: Haoquan YAN, Robert Griffith O'NEILL, Raphael CASAES, Jon MCCHESNEY, Alex PATERSON
  • Publication number: 20180138069
    Abstract: A system for determining an alignment of an edge ring on a substrate support includes a robot control module configured to control a robot to place the edge ring onto the substrate support and retrieve the edge ring from the substrate support. An alignment module is configured to determine a plurality of first positions of the edge ring on the robot prior to being placed onto the substrate support and determine a plurality of second positions of the edge ring on the robot subsequent to being retrieved from the substrate support. An edge ring position module configured to determine a centered position of the edge ring relative to the substrate support based on offsets between the plurality of first positions and the plurality of second positions.
    Type: Application
    Filed: October 31, 2017
    Publication date: May 17, 2018
    Inventors: Ali Sucipto Tan, Haoquan Yan, Marc Estoque, Damon Tyrone Genetti, Jon McChesney, Alexander Miller Paterson
  • Patent number: 9881999
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Grant
    Filed: June 19, 2009
    Date of Patent: January 30, 2018
    Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20160211166
    Abstract: A substrate processing system includes a processing chamber and a pedestal arranged in the processing chamber. An edge coupling ring is arranged adjacent to a radially outer edge of the pedestal. A first actuator is configured to selectively move the edge coupling ring to a raised position, relative to the pedestal to provide clearance between the edge coupling ring and the pedestal to allow a robot arm to remove the edge coupling ring from the processing chamber.
    Type: Application
    Filed: May 6, 2015
    Publication date: July 21, 2016
    Inventors: Haoquan Yan, Robert Griffith O'Neill, Raphael Casaes, Jon McChesney, Alex Paterson
  • Patent number: 7834264
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: November 16, 2010
    Assignee: The Regents of the University of California
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20100003516
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Application
    Filed: June 19, 2009
    Publication date: January 7, 2010
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Patent number: 7569847
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Grant
    Filed: January 20, 2005
    Date of Patent: August 4, 2009
    Assignee: The Regents of the University of California
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Patent number: 7569941
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: August 4, 2009
    Assignee: The Regents of the University of California
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20080092938
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Application
    Filed: December 22, 2006
    Publication date: April 24, 2008
    Inventors: Arun Majumdar, Ali Shakouri, Timothy Sands, Peidong Yang, Samuel Mao, Richard Russo, Henning Feick, Eicke Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20070164270
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Application
    Filed: December 22, 2006
    Publication date: July 19, 2007
    Inventors: Arun Majumdar, Ali Shakouri, Timothy Sands, Peidong Yang, Samuel Mao, Richard Russo, Henning Feick, Eicke Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Patent number: 7239769
    Abstract: A nanowire switching device and method. The device has a nanowire structure comprising an elongated member having a cross-sectional area ranging from about 1 nanometers but less than about 500 nanometers, but can also be at other dimensions, which vary or are substantially constant or any combination of these. The device also has a first terminal coupled to a first portion of the nanowire structure; and a second terminal coupled to a second portion of the nanowire structure. The second portion of the nanowire structure is disposed spatially from the first portion of the nanowire structure. An active surface structure is coupled to the nanowire structure. The active surface structure extends from the first portion to the second portion along the elongated member.
    Type: Grant
    Filed: December 30, 2004
    Date of Patent: July 3, 2007
    Assignee: The Regents of the University of California
    Inventors: Peidong Yang, Hannes Kind, Haoquan Yan, Matthew Law, Benjamin Messer
  • Publication number: 20060054982
    Abstract: A nanowire switching device and method. The device has a nanowire structure comprising an elongated member having a cross-sectional area ranging from about 1 nanometers but less than about 500 nanometers, but can also be at other dimensions, which vary or are substantially constant or any combination of these. The device also has a first terminal coupled to a first portion of the nanowire structure; and a second terminal coupled to a second portion of the nanowire structure. The second portion of the nanowire structure is disposed spatially from the first portion of the nanowire structure. An active surface structure is coupled to the nanowire structure. The active surface structure extends from the first portion to the second portion along the elongated member.
    Type: Application
    Filed: December 30, 2004
    Publication date: March 16, 2006
    Applicant: The Regents of the University of California, a California Corporation
    Inventors: Peidong Yang, Hannes Kind, Haoquan Yan, Matthew Law, Benjamin Messer
  • Patent number: 6996147
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Grant
    Filed: March 29, 2002
    Date of Patent: February 7, 2006
    Assignee: The Regents of the University of California
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20050161662
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Application
    Filed: January 20, 2005
    Publication date: July 28, 2005
    Inventors: Arun Majumdar, Ali Shakouri, Timothy Sands, Peidong Yang, Samuel Mao, Richard Russo, Henning Feick, Eicke Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Patent number: 6882767
    Abstract: A nanowire switching device and method. The device has a nanowire structure comprising an elongated member having a cross-sectional area ranging from about 1 nanometers but less than about 500 nanometers, but can also be at other dimensions, which vary or are substantially constant or any combination of these. The device also has a first terminal coupled to a first portion of the nanowire structure; and a second terminal coupled to a second portion of the nanowire structure. The second portion of the nanowire structure is disposed spatially from the first portion of the nanowire structure. An active surface structure is coupled to the nanowire structure. The active surface structure extends from the first portion to the second portion along the elongated member.
    Type: Grant
    Filed: December 27, 2001
    Date of Patent: April 19, 2005
    Assignee: The Regents of the University of California
    Inventors: Peidong Yang, Hannes Kind, Haoquan Yan, Matthew Law, Benjamin Messer
  • Patent number: 6882051
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Grant
    Filed: March 29, 2002
    Date of Patent: April 19, 2005
    Assignee: The Regents of the University of California
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan
  • Publication number: 20030121764
    Abstract: A nanowire switching device and method. The device has a nanowire structure comprising an elongated member having a cross-sectional area ranging from about 1 nanometers but less than about 500 nanometers, but can also be at other dimensions, which vary or are substantially constant or any combination of these. The device also has a first terminal coupled to a first portion of the nanowire structure; and a second terminal coupled to a second portion of the nanowire structure. The second portion of the nanowire structure is disposed spatially from the first portion of the nanowire structure. An active surface structure is coupled to the nanowire structure. The active surface structure extends from the first portion to the second portion along the elongated member.
    Type: Application
    Filed: December 27, 2001
    Publication date: July 3, 2003
    Applicant: The Regents of the University of California
    Inventors: Peidong Yang, Hannes Kind, Haoquan Yan, Matthew Law, Benjamin Messer
  • Publication number: 20020175408
    Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).
    Type: Application
    Filed: March 29, 2002
    Publication date: November 28, 2002
    Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Arun Majumdar, Ali Shakouri, Timothy D. Sands, Peidong Yang, Samuel S. Mao, Richard E. Russo, Henning Feick, Eicke R. Weber, Hannes Kind, Michael Huang, Haoquan Yan, Yiying Wu, Rong Fan