Patents by Inventor Haoran Qin

Haoran Qin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11367846
    Abstract: The present disclosure discloses a film layer analysis method for an electroluminescent device. The electroluminescent device includes an anode layer, an electroluminescent material layer, and a silver-bearing cathode layer that are sequentially laminated. The film layer analysis method includes stripping the silver-bearing cathode layer from the electroluminescent device by using a first ion sputtering source to obtain an analysis sample with the electroluminescent material layer exposed, and analyzing the exposed electroluminescent material layer by using a second ion sputtering source; wherein sputtering energy of the first ion sputtering source is greater than sputtering energy of the second ion sputtering source.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: June 21, 2022
    Assignees: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ying Liu, Yuhang Peng, Congcong Du, Lei Fan, Chunfang Fan, Qi Wu, Xiaozhong Xue, Haoran Qin
  • Publication number: 20200411304
    Abstract: The present disclosure discloses a film layer analysis method for an electroluminescent device. The electroluminescent device includes an anode layer, an electroluminescent material layer, and a silver-bearing cathode layer that are sequentially laminated. The film layer analysis method includes stripping the silver-bearing cathode layer from the electroluminescent device by using a first ion sputtering source to obtain an analysis sample with the electroluminescent material layer exposed, and analyzing the exposed electroluminescent material layer by using a second ion sputtering source; wherein sputtering energy of the first ion sputtering source is greater than sputtering energy of the second ion sputtering source.
    Type: Application
    Filed: November 1, 2019
    Publication date: December 31, 2020
    Inventors: Ying Liu, Yuhang Peng, Congcong Du, Lei Fan, Chunfang Fan, Qi Wu, Xiaozhong Xue, Haoran Qin