Abstract: The following is directed to an abrasive particle having a body including a core and a coating overlying at least a portion of the core. The coating can include a content of lithium. In an embodiment, the coating can further include silicon, oxygen, or a combination thereof.

Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.

Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.

Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.

Abstract: Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.

Abstract: Methods of forming condensed first layer and semiconductor structures formed from the methods are provided. The methods include, for instance providing at least one layer disposed over a substrate structure of a semiconductor structure, wherein the substrate structure includes an upper silicon region; and performing at least one oxidation process of the semiconductor structure, the at least one oxidation process reducing a thickness of the upper region, wherein the performing facilitates diffusing to form a condensed layer over the substrate structure.

Abstract: A light-emitting diode includes, a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer. The light-emitting diode also includes a transparent conductive layer including a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer. The second transparent conductive layer has a conductivity different than the first transparent conductive layer.

Abstract: Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.

Abstract: Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.

Abstract: A method includes forming a gate structure by growing an interfacial layer on a substrate, depositing a High K layer on the interfacial layer, depositing a TiN Cap on the High K layer and forming a thin barrier layer on the TiN Cap. The gate structure is annealed.

Abstract: Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.

Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.

Abstract: A method includes forming a gate structure by growing an interfacial layer on a substrate, depositing a High K layer on the interfacial layer, depositing a TiN Cap on the High K layer and forming a thin barrier layer on the TiN Cap. The gate structure is annealed.

Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.

Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.

Abstract: A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.