Abstract: A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, and a temperature control system including a source of a fluid medium and one or more openings positioned over the platen and separated from the polishing pad and configured for the fluid medium to flow onto the polishing pad to heat or cool the polishing pad.

Abstract: A chemical mechanical polishing assembly includes a chemical mechanical polishing system, a fluid source, and a fluid delivery conduit to carry a fluid from the fluid source into the chemical mechanical polishing system. The polishing system has a platen to support a polishing pad, a carrier head to support a substrate and bring the substrate into contact with the polishing pad, and a motor to cause relative motion between platen and the carrier head. The fluid delivery conduit includes a conductive wire extending through an interior of the conduit to flow electrostatic discharge to a ground, and a wire extraction fitting covering and sealing a location where the conductive wire passes through a wall of the fluid delivery conduit.

Abstract: A method of fabrication of a substrate includes, after deposition of an outer layer on a substrate and before polishing of an exposed surface of the outer layer of the substrate, performing a hydroblasting treatment of a selected portion of the exposed surface by directing a treatment liquid from a nozzle at a sufficiently high velocity onto the selected portion to remove material from the selected portion such that a thickness non-uniformity of the outer layer is reduced. Then the outer layer of the treated substrate is subject to chemical mechanical polishing to planarize and reduce a thickness of the outer layer.

Abstract: Exemplary carrier heads for a chemical mechanical polishing apparatus may include a carrier body. The carrier heads may include a flexible membrane coupled with the carrier body. The flexible membrane may include a substrate-receiving surface that faces away from the carrier body. The substrate-receiving surface may include a plurality of gripping elements that protrude away from the substrate-receiving surface. Each of the plurality of gripping elements may have a maximum lateral dimension that is no greater than 2 mm.

Abstract: A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid dispenser having a polishing liquid port positioned over the platen to deliver polishing liquid onto the polishing pad, a temperature control system including coolant liquid fluid reservoirs for containing coolant fluids, a thermal controller configured to control the temperature of the coolant fluid within the coolant fluid reservoirs, and a first dispenser having openings in fluid connection with the coolant fluid reservoirs, the openings positioned configured to spray an aerosolized coolant liquid directly onto the polishing pad, and a second dispenser having a coolant port in fluid connection with the coolant fluid reservoirs, the coolant port positioned over the platen and configured to flow a stream of coolant liquid directly onto the polishing pad.

Abstract: A chemical mechanical polishing system includes a support to hold a polishing pad, a carrier head to hold a substrate against the polishing pad during a polishing process, an in-situ monitoring system configured to generate a signal indicative of an amount of material on the substrate, a temperature control system to control a temperature of the polishing process, and a controller coupled to the in-situ monitoring system and the temperature control system. The controller is configured to cause the temperature control system to vary the temperature of the polishing process in response to the signal.

Abstract: A chemical mechanical polishing chamber may include a platen disposed within the chemical mechanical polishing chamber, the platen configured to support a polishing pad. The chamber may also include a slurry delivery arm configured to deliver a slurry to the polishing pad during a chemical mechanical polishing process. The chamber may include an arm may include one or more brackets, mechanically attached to an internal side of the chemical mechanical polishing chamber and positioned over the platen. The chamber may include a plurality of nozzles configured to deliver a gas to the polishing pad, the plurality of nozzles mechanically attached to the one or more brackets of the arm, each of the plurality of nozzles oriented such that an air gap is disposed between adjacent nozzles of the plurality of nozzles such that air may be pulled from the air gap and propelled with the gas towards the polishing pad.

Abstract: A chemical mechanical polishing system includes a support to hold a polishing pad, a carrier head to hold a substrate against the polishing pad during a polishing process, an in-situ monitoring system configured to generate a signal indicative of an amount of material on the substrate, a temperature control system to control a temperature of the polishing process, and a controller coupled to the in-situ monitoring system and the temperature control system. The controller is configured to cause the temperature control system to vary the temperature of the polishing process in response to the signal.

Abstract: A chemical mechanical polishing system includes a first polishing station including a first platen to support a first polishing pad, a transfer station to receive a substrate from a robot, a carrier head movable on a predetermined path from the polishing station to the transfer station, a gas flow regulator having an input for a carrier gas, a liquid flow regulator having an input for a cleaning liquid, and a fluid jet cleaner at a position along the predetermined path. The fluid jet cleaner includes an atomizer nozzle including an input port coupled to the gas flow regulator, an injection port coupled to the liquid flow regulator, and an output port positioned to spray the cleaning liquid entrained in the carrier gas onto the substrate held by the carrier head when the carrier head is located above the fluid jet cleaner.

Abstract: A method of processing a substrate includes polishing a front surface of a substrate on a first pad coupled to a first platen. The method further includes transferring the substrate from the first pad to a second pad coupled to a second platen with a carrier head. The method further includes moving the carrier head to a scan position to place an edge of the substrate above an orientation sensor disposed at a rotational center of the second pad. The method further includes scanning the edge of the substrate with the orientation sensor to produce a signal. The method further includes analyzing the signal to locate a reference mark of the substrate to determine a rotational orientation of the substrate relative to the carrier head.

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, a motor to generate relative motion, a steam generator, and an arm extending over the platen with and at least one opening to deliver steam from the steam generator onto the polishing pad. The steam generator includes a canister, a barrier in the canister dividing the canister into a lower chamber having a water inlet and an upper chamber having a steam outlet, a heating element configured to apply heat to a portion of lower chamber, and a nucleation surface positioned in the lower chamber. The barrier has apertures for steam to pass from the lower chamber to the upper chamber and allows for condensation to pass from the upper chamber to the lower chamber.

Abstract: Embodiments of the present disclosure generally relate fluid nozzles used in semiconductor manufacturing. The fluid nozzle includes a nozzle body disposed between an inlet face and an outlet face. The body includes a threaded region, a central symmetric axis, and a port. The threaded region is disposed between the inlet face and the outlet face. The central symmetric axis extends along a port axis and through the nozzle body. The port extends along a port axis and through the nozzle body. The port axis extends through the nozzle body between the inlet face and the outlet face. A first angle is formed between the port axis and the central symmetric axis. A port outlet face is perpendicular to the port axis, adjacent to the outlet face, and at a second angle to the outlet face.

Abstract: The present disclosure relates to a method and apparatus for cleaning a substrate. The method includes rotating a substrate disposed on a substrate support and spraying a front side of the substrate using steam through a front side nozzle assembly. A back side of the substrate is sprayed using steam through a back side dispenser assembly. A heated chemical is dispensed over the front side of the substrate.

Abstract: An apparatus for steam treatment of a conditioner head and/or conditioner disk in a chemical mechanical polishing system includes a conditioner cleaning cup, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into a cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

Abstract: A method and apparatus for dispensing polishing fluids and onto a polishing pad within a chemical mechanical polishing (CMP) system are disclosed herein. In particular, embodiments herein relate to a CMP system with a first fluid delivery arm and a second fluid delivery arm disposed over the polishing pad to dispense fluid, such as a polishing fluid or water, and/or provide a vacuum pressure. The second fluid delivery arm is configured to dispense a fluid or vacuum pressure onto the polishing pad to effect the polishing rate at the edge of the substrate.

Abstract: An apparatus for steam treatment of a conditioner head and/or conditioner disk in a chemical mechanical polishing system includes a conditioner cleaning cup, a boiler to generate steam, one or more nozzles positioned to direct steam inwardly into a cavity defined by the load cup, and a supply line running from the boiler to the one or more nozzles to supply steam to the one or more nozzles.

Abstract: An apparatus for chemical mechanical polishing includes a rotatable platen having a surface to support a polishing pad, a carrier head to hold a substrate in contact with the polishing pad, and a polishing liquid distribution system. The polishing liquid distribution system includes a dispenser positioned to deliver a polishing liquid to a portion of a polishing surface of the polishing pad, and a curved barrier positioned after the dispenser to spread fresh polishing liquid from the dispenser.

Abstract: A chemical mechanical polishing apparatus has a platen to support a polishing pad, a carrier head comprising a rigid housing and configured to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish the substrate, an in-situ carrier head monitoring system including a sensor positioned to interact with the housing and to detect vibrational motion of the housing and generate signals based on the detected vibrational motion, and a controller. The controller is configured to generate a value for a carrier head status parameter based on received signals from the in-situ carrier head monitoring system, and change a polishing parameter or generate an alert based on the carrier head status parameter.

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a conduit having an inlet to be coupled to a gas source, and a dispenser coupled to the conduit and having a convergent-divergent nozzle suspended over the platen to direct gas from the gas source onto the polishing surface of the polishing pad.

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a source of coolant, a dispenser having one or more apertures suspended over the platen to direct coolant from the source of coolant onto the polishing surface of the polishing pad; and a controller coupled to the source of coolant and configured to cause the source of coolant to deliver the coolant through the nozzles onto the polishing surface during a selected step of a polishing operation.