Patents by Inventor Haotian LING

Haotian LING has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12237427
    Abstract: A tuning method for active metamaterials using IGZO Schottky diodes, wherein the IGZO Schottky diode comprises a substrate, a Schottky electrode, amorphous IGZO active layer, and an ohmic electrode from the bottom up. The method comprises steps as follows: (1) Metamaterials are used as the Schottky electrodes, and amorphous IGZO active layers are used to fully cover the capacitive gap structures in the metamaterials; such capacitive structures in the metamaterials are bonded to the amorphous IGZO active layers to form Shottky barriers; (2) The resulting IGZO Schottky diodes from step (1) are used to tune the metamaterials dynamically.
    Type: Grant
    Filed: June 28, 2020
    Date of Patent: February 25, 2025
    Assignee: SHAN DONG UNIVERSITY
    Inventors: Yifei Zhang, Aimin Song, Haotian Ling, Qingpu Wang
  • Publication number: 20220278241
    Abstract: A tuning method for active metamaterials using IGZO Schottky diodes, wherein the IGZO Schottky diode comprises a substrate, a Schottky electrode, amorphous IGZO active layer, and an ohmic electrode from the bottom up. The method comprises steps as follows: (1) Metamaterials are used as the Schottky electrodes, and amorphous IGZO active layers are used to fully cover the capacitive gap structures in the metamaterials; such capacitive structures in the metamaterials are bonded to the amorphous IGZO active layers to form Shottky barriers; (2) The resulting IGZO Schottky diodes from step (1) are used to tune the metamaterials dynamically.
    Type: Application
    Filed: June 28, 2020
    Publication date: September 1, 2022
    Inventors: Yifei ZHANG, Aimin SONG, Haotian LING, Qingpu WANG