Abstract: The present disclosure provides a hole transport material, a quantum dot light-emitting device and a manufacturing method thereof and a display apparatus. A surface of a quantum dot is modified with a ligand capable of being cross-linked with a modifying group of the hole transport material, that is, a cross-linking group in the ligand, so that when the quantum dot light-emitting device is manufactured, the cross-linking group of the quantum dot material is cross-linked with the modifying group of the hole transport material under a set external stimulus, so that the coupling degree between a light-emitting layer and a hole transport layer is increased and an interface structure between the light-emitting layer and the hole transport layer is weakened, thus facilitating carrier transmission.

Abstract: Embodiments of the present disclosure provide a preparation method of a quantum dot light emitting device and a preparation method of a quantum dot display panel, which includes: providing a base substrate; forming a first sacrificial layer on the base substrate; patterning the first sacrificial layer to form a first sacrificial layer pattern, in which the base substrate includes a first part and a second part, the first sacrificial layer pattern is on the first part, the second part is exposed by the first sacrificial layer pattern; forming a first quantum dot material layer on the base substrate; stripping the first sacrificial layer pattern to remove the first sacrificial layer pattern, the first quantum dot material layer on the first sacrificial layer pattern, and retaining the first quantum dot material layer on the second part of the base substrate to form a first quantum dot light emitting layer.

Abstract: A light-emitting device is provided. The light-emitting device includes a first electrode, a second electrode, a quantum dot light-emitting layer located between the first electrode and the second electrode, and a hole transporting doped layer. The hole transporting doped layer is located between the quantum dot light-emitting layer and the second electrode. The hole transporting doped layer includes a mixture of at least two hole transporting materials, and highest occupied molecular orbital energy levels of the at least two hole transporting materials are different.

Abstract: Disclosed is a synchronous detection system for a trace nitrogen-oxygen compound based on photoacoustic spectrometry, including a NOx (Nitrogen Oxide) detection air channel, a dust detection air channel and a double-photoacoustic spectrometry detection mechanism which are mutually connected in parallel; the NOx detection air channel includes a background interference detection air pipe, a NO2 detection air pipe and a NO detection air pipe that are mutually connected in parallel, and a NOx photoacoustic detection cavity; and the dust detection air channel includes a dust detection air pipe and a dust photoacoustic detection cavity communicating with the dust detection air pipe.

Abstract: Embodiments of the present disclosure provide a quantum dot light emitting device, a preparation method thereof and a quantum dot display panel, the method includes: forming a first function layer; forming a first sacrificial layer and a first photoresist layer; patterning the first photoresist layer; patterning the first sacrificial layer, the first function layer includes a first part and a second part, and the first sacrificial layer pattern and the first photoresist pattern are stacked on the first part, the second part is exposed by the first sacrificial layer pattern and the first photoresist pattern; forming a first quantum dot material layer; stripping the first sacrificial layer pattern to remove the first sacrificial layer pattern, the first photoresist pattern and the first quantum dot material layer on the first sacrificial layer pattern, retaining the first quantum dot material layer on the second part of the first function layer.

Abstract: A quantum dot film includes a target color quantum dot film and a residual non-target color quantum dot film, wherein a ligand for the target color quantum dot of the target color quantum dot film is an oil-soluble ligand, and a ligand for the residual non-target color quantum dot of the residual non-target color quantum dot film is selected from any one or more of halogen ions and short-chain organic ligands whose carbon chain length is in a range of 2 to 18 carbons.

Abstract: A display panel, a display device, and a fabricating method of a display panel. The display panel includes: a base substrate (1); a plurality of light-emitting devices (2) on a side of the base substrate (1); and additional members on a side of the light-emitting devices (2) away from the base substrate (1).

Abstract: The present application provides a light emitting device and a producing method thereof, and a display device, which relates to the technical field of displaying, and may solve the problem of quantum-dot remaining. A light emitting device, wherein the light emitting device includes: a plurality of light emitting areas that are arranged in an array, and non-light emitting areas between neighboring light emitting areas; each of the light emitting areas includes an inorganic electron transporting layer, an organic electron transporting layer and a quantum-dot layer that are arranged sequentially in layer configuration; and an absolute value of a difference between an energy value of a lowest unoccupied molecular orbital of the inorganic electron transporting layer and an energy value of a lowest unoccupied molecular orbital of the organic electron transporting layer is less than or equal to a preset value.

Abstract: Disclosed are a light-emitting device and a preparation method thereof, a display panel and a display device. The light-emitting device includes: a substrate; an auxiliary layer and a quantum dot layer that are arranged in sequence on one side of the substrate; the auxiliary layer has a first group and a second group, the first group and a surface group of the substrate are bound with each other through a chemical reaction, the second group and ligands of quantum dots in the quantum dot layer are bound with each other through a chemical reaction, and a binding force between the auxiliary layer and the substrate is smaller than a binding force between the quantum dots and the auxiliary layer.

Abstract: A method for manufacturing display panel including: forming pixel defining layer on one side of base substrate; forming quantum dot layer, including sequentially forming first quantum dot pattern of at least two quantum dot patterns, forming first quantum dot pattern of one quantum dot pattern including forming quantum dot film capable of emitting light with corresponding colors, quantum dot film including quantum dot body and cross-linkable ligand; performing local cross-linking process on quantum dot film; performing developing process on quantum dot film subjected to local crosslinking process to form first quantum dot pattern in pixel accommodating hole corresponding to corresponding color; after forming first quantum dot pattern of quantum dot patterns, the method includes performing fluorescence property quenching process to quench fluorescence of quantum dot body in quantum dot on surface of first quantum dot pattern and not subjected to crosslinking process.

Abstract: A light-emitting device includes a first electrode and a second electrode arranged opposite to each other, and a light-emitting functional layer located between the first electrode and the second electrode. The light-emitting functional layer includes a first light-emitting layer, and the first light-emitting layer includes a first light-emitting material. The first light-emitting material is configured to emit light in response to a control of an electrical signal on the first electrode and an electrical signal on the second electrode. The light-emitting functional layer further includes a second light-emitting material. A difference between a Stokes shift of the first light-emitting material and a Stokes shift of the second light-emitting material is in a range of 10 nm to 50 nm, inclusive.

Abstract: A quantum dots material solution is provided. The quantum dots material solution includes a quantum dots material; a ligand chelated to the quantum dots material; a fast material capable of generating, upon a first irradiation, a quencher quenching the quantum dots material; a second material capable of at least partially converting the quantum dots material in a plurality of block regions from a first form into a second form. The quantum dots material in the second form has a lower solubility in a developing solution than the quantum dots material in the first form.

Abstract: Disclosed is a synchronous detection system for a trace nitrogen-oxygen compound based on photoacoustic spectrometry, including a NOx (Nitrogen Oxide) detection air channel, a dust detection air channel and a double-photoacoustic spectrometry detection mechanism which are mutually connected in parallel; the NOx detection air channel includes a background interference detection air pipe, a NO2 detection air pipe and a NO detection air pipe that are mutually connected in parallel, and a NOx photoacoustic detection cavity; and the dust detection air channel includes a dust detection air pipe and a dust photoacoustic detection cavity communicating with the dust detection air pipe.

Abstract: The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.

Abstract: An electron transport material, an electroluminescent device and a preparation method therefor, and a display apparatus. The electron transport material includes: inorganic metal oxide nanoparticles, and a ligand for modifying the inorganic metal oxide nanoparticles, wherein the ligand includes a coordination group, and the coordination group is coordinated with and bound to at least one of a hydroxyl group and a metal cation on the surface of the inorganic metal oxide nanoparticles.

Abstract: A quantum dot film and a preparation method therefor, a photoelectric device, a display apparatus, and a preparation method for a quantum dot light-emitting device. The quantum dot film is formed by quantum dots containing a ligand, and the ligand is a halogen ion. The preparation method for the quantum dot film includes: S100: preparing an initial quantum dot film by using quantum dots containing an oil-soluble ligand; and S200: using a solid-state ligand exchange method to perform ligand exchange on the oil-soluble ligand on the surface of the initial quantum dot film by using an organic salt of a halogen, such that the oil-soluble ligand on the surface of the quantum dot film is exchanged into the halogen ion.

Abstract: Disclosed are a quantum dot device, a display apparatus, and a manufacturing method for a quantum dot device. The quantum dot device includes: a substrate assembly; a first fixing layer, the first fixing layer being located on one side of the substrate assembly and having silane coupling agents with multi coordinate bonds, and first connection structures being provided between the first fixing layer and the substrate assembly; a quantum dot film layer, the quantum dot film layer being located on the side of the first fixing layer away from the substrate assembly and having a plurality of pattern portions, the pattern portions having quantum dots, and second connection structures being provided between the pattern portion and the first fixing layer.

Abstract: Disclosed are a quantum dot material, a method for patterning a quantum dot film and a quantum dot light emitting device. when preparing a patterned quantum dot film, firstly, a quantum dot film is made by using the quantum dot material with the photolysis group, and a corresponding region of the quantum dot film is irradiated with ultraviolet light under the shielding of a mask template, so that the photolysis group in the corresponding region is photolyzed into the polarity change group, thereby changing the solubility of the quantum dot material in the corresponding region; and subsequently, the quantum dot film is cleaned by using a solvent which can dissolve the quantum dot material with the photolysis group, the quantum dot material in non-irradiated regions is dissolved and removed, and the quantum dot material in the corresponding region is retained to form a pattern of the quantum dot film.

Abstract: A patterned quantum dot film layer, a quantum dot light-emitting device and a manufacturing method. The manufacturing method includes: forming a patterned mask layer on one side of a base substrate; forming a quantum dot thin film on the side of the mask layer that faces away from the base substrate, the quantum dot thin film includes quantum dot bodies and native ligands connected to the quantum dot bodies; forming, on the side of the quantum dot thin film that faces away from the mask layer, a ligand thin film that includes replacement ligands, and leaving same to stand for a first duration, such that the native ligands are replaced by the replacement ligands; performing cleaning by means of a cleaning solvent, removing unreacted replacement ligands and replaced native ligands; peeling off the mask layer, and removing together the quantum dot thin film attached to the mask layer.

Abstract: A light-emitting device and a manufacturing method therefor, and a display device are disclosed. The light-emitting device includes a plurality of pixel units. Each pixel unit includes at least n sub-pixels capable of emitting light of n different colors. Each sub-pixel includes: a first electrode and a second electrode arranged oppositely; a light-emitting layer located between the first electrode and the second electrode, in at least one pixel unit, the light-emitting layer of the at least one sub-pixel includes a host quantum dot and at least one residual quantum dot emitting light of color different from the host quantum dot; and a color filter layer located on the side of the first electrode or the second electrode away from the light-emitting layer. The color filter layer is configured to pass through light emitted by the host quantum dot, and prevent light emitted by the residual quantum dot from passing through.