Abstract: A photosensitive detector includes an array of detection units, each detection unit having a light-sensing transistor (1), a charge storage transistor (2) and a reading transistor (3), or comprising a light-sensing transistor, a charge transfer transistor (4), a charge storage transistor and a reading transistor. The light-sensing transistor is configured to realize the light-sensing function of the photosensitive detector; the charge storage transistor is configured to store photogenerated charges; the reading transistor is configured to read a signal; and, the charge transfer transistor is configured to control the transfer of the photogenerated charges. The photosensitive detector can realize global shutter and fast reading, and is compatible with the existing floating gate CMOS process, and the failure of any pixel will not affect the normal operation of the whole imaging array.

Abstract: A photoelectric computing unit, a photoelectric computing array and a photoelectric computing method. The photoelectric computing unit includes a semiconductor multifunctional region structure, which includes at least one carrier control region, at least one coupling region, and at least one photon-generated carrier collection region and readout region.

Abstract: A two-by-two array consists of four pixels. Each pixel comprises one light-sensing transistor and one reading transistor. Both the light sensing transistor and the reading transistor are formed above a same P-type semiconductor substrate, and have a composite dielectric gate structure. The substrates of the four reading transistors are connected to form a regular octagonal ring structure located in the center of the array. On four sides of the regular octagonal ring structure, four heavily-doped N+ regions are formed on the substrates not covered with the composite dielectric gate, of which every two regions are opposite to each other and form right angles, wherein two opposite heavily-doped N+ regions are connected to form a shared N+ source, and the other two are connected to form a shared N+ drain.

Abstract: A photosensitive detection unit has a composite dielectric gate MOS-C portion and a composite dielectric gate MOSFET portion. The two portions are formed above a same P-type semiconductor substrate, and share a charge coupled layer. A plurality of the photosensitive detection units are arranged on a same P-type semiconductor substrate in form of an array to obtain a detector. Adjacent unit pixels in the detector are isolated by deep trench isolation regions and P+-type injection regions below the isolation regions. During the detection, the P-type semiconductor substrate in the composite dielectric gate MOS-C portion senses light and then couples photoelectrons to the charge coupled layer, and photoelectronic signals are read by the composite dielectric gate MOSFET portion.

Abstract: A two-by-two array consists of four pixels. Each pixel comprises one light-sensing transistor and one reading transistor. Both the light sensing transistor and the reading transistor are formed above a same P-type semiconductor substrate, and have a composite dielectric gate structure. The substrates of the four reading transistors are connected to form a regular octagonal ring structure located in the center of the array. On four sides of the regular octagonal ring structure, four heavily-doped N+ regions are formed on the substrates not covered with the composite dielectric gate, of which every two regions are opposite to each other and form right angles, wherein two opposite heavily-doped N+ regions are connected to form a shared N+ source, and the other two are connected to form a shared N+ drain.

Abstract: A photosensitive detector includes an array of detectin units, each detection unit having a light-sensing transistor (1), a charge storage transistor (2) and a reading transistor (3), or comprising a light-sensing transistor, a charge transfer transistor (4), a charge storage transistor and a reading transistor. The light-sensing transistor is configured to realize the light-sensing function of the photosensitive detector; the charge storage transistor is configured to store photogenerated charges; the reading transistor is configured to read a signal; and, the charge transfer transistor is configured to control the transfer of the photogenerated charges. The photosensitive detector can realize global shutter and fast reading, and is compatible with the existing floating gate CMOS process, and the failure of any pixel will not affect the normal operation of the whole imaging array.

Abstract: The present invention provides a detection device based on the shadow imaging of platelets and a method thereof. The method comprises following steps: optically projecting and/or photographing a blood sample to be detected directly by an image sensor chip having a submicron pixel size and a megapixel scale, the blood sample being injected into a sample chamber of a microfluidic chip fixed to the surface of the image sensor chip; and then, identifying and counting imaging results by an image processing algorithm when the physical pixel size, in the imaging results, occupied by abnormally-sized platelets in the blood sample is significantly greater than the physical pixel size occupied by normally-sized platelets, so as to obtain the number and proportion of the abnormally-sized platelets.

Abstract: Provided is a novel active noise control biosensor including a detection plate, a signal detection module and a control module. The signal detection module includes a signal superimposable transistor and a readout circuit. The signal superimposable transistor has a secondary input terminal and a primary input terminal. The detection plate inputs a detected primary signal to the primary input terminal, and the control module processes an output signal from the signal detection module by a signal processing system and generates and inputs a secondary signal to the secondary input terminal. The primary signal and the secondary signal received by the signal superimposable transistor are superimposed to realize active noise control, and the superimposed signal is read out by the readout circuit and output as an input signal to the control module. The biosensor can achieve the detection of potential or charges and have active noise control characteristics.

Abstract: Provided is a novel active noise control biosensor including a detection plate, a signal detection module and a control module. The signal detection module includes a signal superimposable transistor and a readout circuit. The signal superimposable transistor has a secondary input terminal and a primary input terminal. The detection plate inputs a detected primary signal to the primary input terminal, and the control module processes an output signal from the signal detection module by a signal processing system and generates and inputs a secondary signal to the secondary input terminal. The primary signal and the secondary signal received by the signal superimposable transistor are superimposed to realize active noise control, and the superimposed signal is read out by the readout circuit and output as an input signal to the control module. The biosensor can achieve the detection of potential or charges and have active noise control characteristics.

Abstract: A photosensitive detection unit has a composite dielectric gate MOS-C portion and a composite dielectric gate MOSFET portion. The two portions are formed above a same P-type semiconductor substrate, and share a charge coupled layer. A plurality of the photosensitive detection units are arranged on a same P-type semiconductor substrate in form of an array to obtain a detector. Adjacent unit pixels in the detector are isolated by deep trench isolation regions and P+-type injection regions below the isolation regions. During the detection, the P-type semiconductor substrate in the composite dielectric gate MOS-C portion senses light and then couples photoelectrons to the charge coupled layer, and photoelectronic signals are read by the composite dielectric gate MOSFET portion.