Patents by Inventor Haoxin FU

Haoxin FU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250344550
    Abstract: The present disclosure relates to a heterojunction solar cell, including a substrate layer, a first passivation layer, a second passivation layer, an emission member, and a back surface field member. The emission member and the back field member each include a doped layer, a conducting layer, and an electrode layer sequentially disposed along the direction away from the substrate layer. One or both of the emission member and the back surface field member include an electrical contact reinforced structure. The electrical contact reinforced structure is a first doped region and a second doped region of the doped layer. The second doped region is disposed beside the first doped region and is shielded by the electrode layer. One or both of the doping concentration and the crystallization degree of the second doped regions are higher than those of the first doped region.
    Type: Application
    Filed: July 28, 2022
    Publication date: November 6, 2025
    Inventors: Shihu LAN, Liping ZHANG, Hui ZHAO, Haichuan ZHANG, Jianhua SHI, Haoxin FU, Fanying MENG, Zhengxin LIU
  • Patent number: 12453190
    Abstract: A preparation method of a heterojunction solar cell includes following steps: depositing a first passivation layer on a first surface of a silicon substrate by using a gas source, a base material of the first passivation layer being hydrogenated amorphous silicon; during depositing hydrogenated amorphous silicon of the first passivation layer, allowing the gas source to gradually incorporate carbon dioxide, and controlling a proportion of carbon dioxide in the gas source to gradually increase with increase of a thickness of the first passivation layer which has been deposited.
    Type: Grant
    Filed: August 30, 2022
    Date of Patent: October 21, 2025
    Assignee: TONGWEI SOLAR (CHENGDU) CO., LTD.
    Inventors: Haichuan Zhang, Shihu Lan, Liping Zhang, Hui Zhao, Jianhua Shi, Haoxin Fu, Junlin Du, Fanying Meng, Zhengxin Liu
  • Publication number: 20240274741
    Abstract: A preparation method of a heterojunction solar cell includes following steps: depositing a first passivation layer on a first surface of a silicon substrate by using a gas source, a base material of the first passivation layer being hydrogenated amorphous silicon; during depositing hydrogenated amorphous silicon of the first passivation layer, allowing the gas source to gradually incorporate carbon dioxide, and controlling a proportion of carbon dioxide in the gas source to gradually increase with increase of a thickness of the first passivation layer which has been deposited.
    Type: Application
    Filed: August 30, 2022
    Publication date: August 15, 2024
    Inventors: Haichuan ZHANG, Shihu LAN, Liping ZHANG, Hui ZHAO, Jianhua SHI, Haoxin FU, Junlin DU, Fanying MENG, Zhengxin LIU
  • Publication number: 20240204118
    Abstract: A solar cell is provided, includes: a substrate, a first passivation layer, an emission layer, a first conductive layer, a second passivation layer, a back surface field layer and a second conductive layer. The first passivation layer, the emission layer and the first conductive layer are sequentially disposed on a surface of one side of the substrate, and the second passivation layer, the back surface field layer and the second conductive layer are sequentially disposed on a surface of another side of the substrate. The first conductive layer includes a first transparent conductive oxide layer, a first conductive metal layer and a second transparent conductive oxide layer which are sequentially stacked.
    Type: Application
    Filed: July 28, 2022
    Publication date: June 20, 2024
    Inventors: Haichuan ZHANG, Jianhua SHI, Chuncai MENG, Qiang YUAN, Haoxin FU, Junlin DU, Fanying MENG, Zhengxin LIU