Abstract: A method for manufacturing a SONOS memory discloses forming first a thin oxide layer as a sidewall protection layer and a blocking layer. This layer prevents the high dielectric-constant layer at the bottom of the stacked gate structure from being exposed on the surface. An lightly doped drain (LDD) implantation area is defined by a lateral thickness of a thin oxide layer, so that the channel width may be controlled by controlling the thickness of the thin oxide layer. Thus, the width of a current channel at the bottom of a gate is reduced under the same ion implantation condition into the active area, thereby improving a current capacity of the SONOS memory without adding any mask or photolithography step, and thus bring no additional patterning costs or active area ion implantation costs.

Abstract: An apparatus includes an optical circuit having at least one reconfigurable beamsplitter and is configured to receive a plurality of input optical modes in a Gaussian state and generate a plurality of output optical modes. The apparatus also includes at least one detector optically coupled with the optical circuit and configured to perform a non-Gaussian measurement of a first output optical mode from the plurality of output optical modes. The non-Gaussian measurement of the first output optical mode is configured to cause a second output optical mode from the plurality of output optical modes to be in a first non-Gaussian state. The apparatus also includes a controller operatively coupled to the optical circuit and configured to change a setting of the at least one reconfigurable beamsplitter to cause the second output optical mode from the plurality of output optical modes to be in a second non-Gaussian state.

Abstract: An apparatus includes an optical circuit having at least one reconfigurable beamsplitter and is configured to receive a plurality of input optical modes in a Gaussian state and generate a plurality of output optical modes. The apparatus also includes at least one detector optically coupled with the optical circuit and configured to perform a non-Gaussian measurement of a first output optical mode from the plurality of output optical modes. The non-Gaussian measurement of the first output optical mode is configured to cause a second output optical mode from the plurality of output optical modes to be in a first non-Gaussian state. The apparatus also includes a controller operatively coupled to the optical circuit and configured to change a setting of the at least one reconfigurable beamsplitter to cause the second output optical mode from the plurality of output optical modes to be in a second non-Gaussian state.

Abstract: A method includes receiving a representation of a quantum circuit at a processor and identifying multiple contraction trees based on the representation of the quantum circuit. Each of the contraction trees represents a tensor network from a set of tensor networks. A first subset of multiple tasks, from a set of tasks associated with the plurality of contraction trees, is assigned to a first set of at least one compute device having a first type. A second subset of multiple tasks mutually exclusive of the first subset of multiple tasks is assigned to a second set of at least one compute device having a second type different from the first type. The quantum circuit is simulated by executing the first subset of tasks via the first set of at least one compute device and executing the second subset of tasks via the second set of at least one compute device.

Abstract: A method includes sending a probe beam into a beam path that induces a lateral displacement to the probe beam. The probe beam includes a plurality of orthogonal spatial modes that are entangled with each other. The method also includes measuring a phase of each spatial mode from the plurality of orthogonal spatial modes in the probe beam at a detector disposed within a near field propagation regime of the probe beam. The method also includes estimating the lateral displacement of the probe beam based on a phase of each spatial mode from the plurality of spatial modes in the probe beam after the beam path.

Abstract: A method includes calculating a plurality of permutation matrices of an input matrix that characterizes a linear transformation of a plurality of input states. The method also includes determining a plurality of settings of an optical circuit based on the plurality of permutation matrices. Each setting in the plurality of settings is associated with an electric power, from a plurality of electric powers, consumed by the optical circuit. The method also includes determining a selected setting of the optical circuit based on the electric power from the plurality of electric powers and consumed by the optical circuit at each setting from the plurality of settings associated with the electric power. The method further includes implementing the selected setting on the optical circuit to perform the linear transformation of the plurality of input states.

Abstract: A method includes sending a probe beam into a beam path that induces a lateral displacement to the probe beam. The probe beam includes a plurality of orthogonal spatial modes that are entangled with each other. The method also includes measuring a phase of each spatial mode from the plurality of orthogonal spatial modes in the probe beam at a detector disposed within a near field propagation regime of the probe beam. The method also includes estimating the lateral displacement of the probe beam based on a phase of each spatial mode from the plurality of spatial modes in the probe beam after the beam path.