Patents by Inventor Harald A. Enge
Harald A. Enge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7897943Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: GrantFiled: January 27, 2006Date of Patent: March 1, 2011Inventors: Kenneth H. Purser, Harald A. Enge, Norman L. Turner
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Patent number: 7888660Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: GrantFiled: January 27, 2006Date of Patent: February 15, 2011Inventors: Kenneth H. Purser, Harald A. Enge, Norman L. Turner
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Patent number: 7351984Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: GrantFiled: April 5, 2007Date of Patent: April 1, 2008Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Kenneth H. Purser, Harald A. Enge, Norman L. Turner
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Patent number: 7301156Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: GrantFiled: June 16, 2005Date of Patent: November 27, 2007Inventors: Kenneth H. Purser, Harald A. Enge, Norman L. Turner
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Publication number: 20070181832Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: ApplicationFiled: April 5, 2007Publication date: August 9, 2007Inventors: Kenneth Purser, Harald Enge, Norman Turner
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Publication number: 20070023697Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: ApplicationFiled: January 27, 2006Publication date: February 1, 2007Inventors: Kenneth Purser, Harald Enge, Norman Turner
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Publication number: 20060169924Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: ApplicationFiled: January 27, 2006Publication date: August 3, 2006Inventors: Kenneth Purser, Harald Enge, Norman Turner
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Publication number: 20050242294Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: ApplicationFiled: June 16, 2005Publication date: November 3, 2005Inventors: Kenneth Purser, Harald Enge, Norman Turner
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Patent number: 6933507Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: GrantFiled: July 15, 2003Date of Patent: August 23, 2005Inventors: Kenneth H. Purser, Harald A. Enge, Norman L. Turner
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Publication number: 20040097058Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy.Type: ApplicationFiled: July 15, 2003Publication date: May 20, 2004Inventors: Kenneth H. Purser, Harald A. Enge, Norman L. Turner
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Publication number: 20030001110Abstract: A system for amplifying a scan of an ion beam is provided. Examples of the system include a magnetic scanner and a beam amplifier in combination. The magnetic scanner is configured to scan the ion beam in a single plane. The beam amplifier is configured to receive the ion beam from the magnetic scanner, amplify a divergence of the ion beam, and focus the ion beam in the single plane.Type: ApplicationFiled: February 6, 2002Publication date: January 2, 2003Inventors: Harald Enge, Donald W. Berrian
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Patent number: 5689112Abstract: Surface contamination of silicon wafers is detected by a combined beam-deflecting magnet and magnetic spectrometer system. Heavy ions are directed onto the surface of a silicon wafer through the beam-deflecting magnet, and ions back-scattered from contaminants in the surface of the wafer pass through the magnetic spectrometer onto a focal-plane detector. One or more Einzel lenses prevent ions back-scattered from the silicon in the wafer from reaching the detector.Type: GrantFiled: April 12, 1996Date of Patent: November 18, 1997Inventors: Harald A. Enge, William A. Lanford
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Patent number: 5508515Abstract: A mass recombinator comprises a source of negative ions to be analyzed. These negative ions are accelerated to roughly the same moderate kinetic energy and electrostatically focused to a substantially parallel beam which enters the magnetic field of a dipole magnet at an angle of incidence. The field of the dipole magnet is designed to deflect a substantially parallel beam of negative ions having the same energy and entering at a specified angle of incidence in such a manner that it describes a loop of approximately 264.6 degrees, forming a mass spectrum at a position inside the magnet after deflection of approximately 132.3 degrees. The beam exits the field as a parallel beam substantially where it entered, independent of the mass of the ions.Type: GrantFiled: March 6, 1995Date of Patent: April 16, 1996Inventor: Harald A. Enge
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Patent number: 5451790Abstract: In apparatus for irradiating fluid material with an electron beam, a tubular or circular flow is imparted to the fluid material to be irradiated while a rotary motion is imparted to the electron beam, so that the point of intersection between the electron beam and the fluid material repeatedly moves around a circle through which the material passes.Type: GrantFiled: January 21, 1994Date of Patent: September 19, 1995Assignee: Ion Physics CorporationInventor: Harald A. Enge
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Patent number: 5402094Abstract: A magnet is specially designed for the creation of an extremely uniform magnetic field in a small volume for use in MRI mammography. A disk of ferromagnetic material has a surface having a well adapted to receive the object to be examined and lined with a solenoidal coil which provides the basic magnetic field. Uniformity is increased by three additional coils surrounding the solenoidal coil and placed in annular slots surrounding the well. Of these three additional coils, the middle one generates a magnetic field in the well which opposes the basic magnetic field, and the others supplement the basic magnetic field. The ampereturns of the three additional coils are selected to maximize uniformity of the magnetic field in the well.Type: GrantFiled: August 15, 1994Date of Patent: March 28, 1995Inventor: Harald A. Enge
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Patent number: 4745281Abstract: An ion source provides ions that pass through an analyzing magnet, image slit, and magnetic quadrupole lenses before entering a beam deflector. The deflected ion beam enters a magnetic field established by a dipole magnetic lens of rectangular cross section in planes parallel to the beam plane including the scanned ion beam, and having a variable width gap in a plane perpendicular to the beam plane that provides a parallel scanned ion beam. The parallel scanned ion beam enters a slot-shaped acceleration columnn and then scans a target.Type: GrantFiled: August 25, 1986Date of Patent: May 17, 1988Assignee: Eclipse Ion Technology, Inc.Inventor: Harald A. Enge
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Patent number: 4393441Abstract: A modified double Greinacher high voltage power supply wherein the side-string capacitances thereof have an inductance associated in series therewith, the inductance/capacitance circuits being appropriately tuned to the frequency of the R-F input voltage source. Preferably the center-string capacitance may have an inductance associated in series therewith, such circuit being similarly tuned. The input R-F voltage, rather than being supplied as a sine wave is supplied substantially as a square wave to the first stage and is transmitted to each of the subsequent stages substantially as a square wave.Type: GrantFiled: July 17, 1981Date of Patent: July 12, 1983Inventor: Harald A. Enge
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Patent number: 4276477Abstract: An apparatus for performing double deflection scanning of charged particle beams utilizes a means for introducing variations in the angle of the charged particle beam in combination with the focal or optical properties of a sector magnet. The means for introducing angular variations receives a charged particle beam and varies the angle of, i.e., deflects, the beam in a plane to define a time modulated fan beam. Once the beam angle is varied the beam is introduced to the gap between the poles of a sector electromagnet operating in a direct current mode. The focal properties of the sector electromagnet translates the time modulated fan beam into a time modulated parallel beam. The parallel beam is double deflected and may be used, for example, as the substrate impinging beam in ion implantation equipment. Multiple sector magnets may be employed for multiple end stations.Type: GrantFiled: September 17, 1979Date of Patent: June 30, 1981Assignee: Varian Associates, Inc.Inventor: Harald A. Enge
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Patent number: 4063098Abstract: A system for deflecting a beam of particles having different momenta, preferably through a 90.degree. angle, so as to cause the beam to impinge upon a moving target and to scan across the target. The system includes a means responsive to a beam from a suitable source for causing the beam to periodically scan in a scanning plane and further means for deflecting the periodically scanned beam through the desired angle in a deflection plane so that the deflected beam impinges on the target. Means are included in the system for reducing the momentum dispersion at the target in both the deflection and the scanning planes and for spatially focussing the beam so as to produce a desired beam diameter at the target.Type: GrantFiled: October 7, 1976Date of Patent: December 13, 1977Assignee: Industrial Coils, Inc.Inventor: Harald A. Enge