Abstract: A method for manufacturing a thermoelectric component is provided. The method comprises the following steps: producing a plurality of first layers of a first thermoelectric material, and producing a plurality of second layers of a second thermoelectric material, such that the first layers are arranged in alternation with the second layers. Producing the first and/or the second thermoelectric layers each comprises producing at least one first initial layer and at least one second initial layer.

Abstract: An apparatus for converting and storing energy, which includes a plurality of various energy converters for converting energy, which is present in various forms of energy, to electrical energy. The apparatus further includes an energy store for storing the electrical energy and an interface for outputting the energy to a consumer.

Abstract: The present invention refers to a method of manufacturing a thermo-electric material consisting of a thermoelectric substrate with thermal scattering centers, in which a melt at least of the substrate is cooled in a manner that the scattering centers are generated as nano-scale precipitations from the melt embedded in the substrate and a material manufactured accordingly.

Abstract: A solder, in particular a thin-film solder, for joining microelectromechanical components, wherein the solder is a eutectic mixture of gold and bismuth. Components and devices joined by a solder of this type are also disclosed, in addition to processes for producing such components or devices.

Abstract: A microelectromechanical device and a method for producing it having at least one layer on a substrate, in particular a thermoelectric layer on a substrate, the thermal expansion coefficient of the at least one layer and the thermal expansion coefficient of the substrate differing greatly. The at least one layer is coupled to at least one stress reduction means for the targeted reduction of lateral mechanical stresses present in the layer. This achieves a stress-free layer or enables stress-free growth.

Abstract: A semiconductor component has at least one Peltier element and at least one thermogenerator element that are thermally coupled to one another via a coupling device. By virtue of the thermal coupling of the Peltier element and the thermogenerator element through the coupling device, it is possible to use the Peltier element to cool a microstructure, in particular an optoelectronic component (e.g. a laser diode). Efficient temperature regulation and efficient operation of an optoelectronic component are thus possible.

Abstract: Method for fabricating a thermoelectric converter having a plurality of series-connected thermoelement cells, which are connected in series with one another by means of a plurality of first electrical conductor tracks (3) and each of which has a first body (4) made of thermoelectric material of a first conduction type and a second body (5) made of thermoelectric material of a second conduction type. The thermoelement cells are fabricated by means of method steps appertaining to semiconductor technology.

Abstract: A method produces a thermoelectric layer structure on a substrate and the thermoelectric layer structure has at least one electrically anisotropically conductive V-VI layer, in particular a (Bi, Sb)2 (Te, Se)3 layer. The V-VI layer is formed by use of a seed layer or by a structure formed in the substrate, and disposed relative to the substrate such that an angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. The orientation can also be effected by an electric field. Components are formed of the thermoelectric layer structure in which the angle between the direction of the highest conductivity of the V-VI layer and the substrate is greater than 0°. As a result, the known anisotropy of the V-VI materials can advantageously be used for the construction of components.