Patents by Inventor Harald Benjamin Profijt

Harald Benjamin Profijt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS FOR FORMING A SEMICONDUCTOR STRUCTURE AND RELATED SEMICONDUCTOR STRUCTURES
    Publication number: 20210134588
    Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1?xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1?xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1?xGex) seed layer are also disclosed.
    Type: Application
    Filed: January 11, 2021
    Publication date: May 6, 2021
    Inventors: David Kohen, Harald Benjamin Profijt, Andrew Kretzschmar
  • Methods for forming a semiconductor structure and related semiconductor structures
    Patent number: 10923344
    Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: February 16, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: David Kohen, Harald Benjamin Profijt, Andrew Kretzschmar
  • METHODS FOR FORMING A SEMICONDUCTOR STRUCTURE AND RELATED SEMICONDUCTOR STRUCTURES
    Publication number: 20190131124
    Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.
    Type: Application
    Filed: October 30, 2017
    Publication date: May 2, 2019
    Inventors: David Kohen, Harald Benjamin Profijt, Andrew Kretzschmar
  • Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
    Patent number: 10236177
    Abstract: A method for depositing a germanium tin (Ge1-xSnx) semiconductor is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature and exposing the substrate to a germanium precursor and a tin precursor. The method may further include; depositing a germanium tin (Ge1-xSnx) semiconductor on the surface of the substrate, and exposing the germanium tin (Ge1-xSnx) semiconductor to a boron dopant precursor. Semiconductor device structures including a germanium tin (Ge1-xSnx) semiconductor formed by the methods of the disclosure are also provided.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: March 19, 2019
    Assignee: ASM IP Holding B.V..
    Inventors: David Kohen, Harald Benjamin Profijt
  • METHODS FOR DEPOSITING A DOPED GERMANIUM TIN SEMICONDUCTOR AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20190067004
    Abstract: A method for depositing a germanium tin (Ge1-xSnx) semiconductor is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature and exposing the substrate to a germanium precursor and a tin precursor. The method may further include; depositing a germanium tin (Ge1-xSnx) semiconductor on the surface of the substrate, and exposing the germanium tin (Ge1-xSnx) semiconductor to a boron dopant precursor. Semiconductor device structures including a germanium tin (Ge1-xSnx) semiconductor formed by the methods of the disclosure are also provided.
    Type: Application
    Filed: August 22, 2017
    Publication date: February 28, 2019
    Inventors: David Kohen, Harald Benjamin Profijt