Abstract: A method for mounting photovoltaic modules includes calculating a structural load of at least one photovoltaic module based on an expected mechanical load so as to determine optimal attachment locations on the at least one photovoltaic module for attachment elements. The attachment elements are disposed at the determined attachment locations so that the attachment elements extend partially over a section of the at least one photovoltaic module. The at least one photovoltaic module is attached to the substructure via the attachment elements.

Abstract: A method of installing a photovoltaic module includes providing a stationary substructure configured as a supporting and affixing structure and affixing the photovoltaic module to the substructure with an adhesive bond. A photovoltaic array includes a stationary substructure configured as a supporting and affixing structure and at least one photovoltaic module affixed to the substructure by an adhesive bond.

Abstract: The present invention provides a scanning probe microscope cantilever comprising a support portion, a lever portion extended from the support portion, and a needle projecting out of a first surface of the cantilever in the vicinity of a free end of the lever portion. From a second surface of the cantilever opposite the first surface, a bore extends through the needle to an aperture formed at a tip of the needle. To the tip of the needle, a substantially globular particle is attached. A method of scanning a sample surface comprises creating relative cantilever motion substantially toward the sample such that the particle experiences a contact force with the sample, illuminating a top surface of the cantilever with laser light such that a portion of the laser light passes through the hollow needle and is emitted from the aperture onto the particle, and detecting scattered light from the sample.

Abstract: A method of fabricating an integrated circuit comprising providing a substrate, forming a first layer on the substrate by electrochemical deposition using an electrolyte solution, and converting at least a portion of the first layer into a second layer by electrochemical oxidation using an electrolyte solution, the second layer being an oxide layer.

Abstract: A system of film height measurements and method of measuring film height on a substrate are disclosed. A radiation source illuminates a beam of radiation in the optical range onto a substrate being coated with a layer having a nominal film height is provided. Reflected signals are recorded for two positions and a film height difference of the layer is calculated.

Abstract: The present invention provides a scanning probe microscope cantilever comprising a support portion, a lever portion extended from the support portion, and a needle projecting out of a first surface of the cantilever in the vicinity of a free end of the lever portion. From a second surface of the cantilever opposite the first surface, a bore extends through the needle to an aperture formed at a tip of the needle. To the tip of the needle, a substantially globular particle is attached. A method of scanning a sample surface comprises creating relative cantilever motion substantially toward the sample such that the particle experiences a contact force with the sample, illuminating a top surface of the cantilever with laser light such that a portion of the laser light passes through the hollow needle and is emitted from the aperture onto the particle, and detecting scattered light from the sample.

Abstract: In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

Abstract: The present invention relates to a method for the depth-resolved characterization of a layer of a carrier. This involves firstly producing a cutout in the layer of the carrier with a sidewall and subsequently removing carrier material adjoining the sidewall with the aid of an ion beam. During the removal process, images of the sidewall are recorded and material compositions of the removed carrier material are determined as well. A depth-resolved characterization of the layer of the carrier is carried out on the basis of a correlation of the determined material compositions of the removed carrier material with the recorded images of the sidewall, layer depths being assigned to the material compositions of the removed carrier material with the aid of the images of the sidewall. The invention furthermore relates to an apparatus for carrying out this method.

Abstract: The present invention provides a method for the characterization of a depth structure in a substrate at a surface of the substrate, in which a cutout is produced at the surface of the substrate between an imaging device and the depth structure, the cutout being spaced apart from the depth structure. A layer of the substrate, which incipiently cuts the depth structure and the cutout, is removed by means of an ion beam in order to obtain a cut area, the layer and the normal to the area of the surface of the substrate assuming an acute angle that is greater than zero. The cut area is imaged by means of the imaging device in order to characterize the depth structure.

Abstract: In order to measure a surface profile of a sample, an imprint of the surface profile to be examined is produced in a transfer material. The sample contains processed semiconductor material and is in particular a patterned semiconductor wafer or part of a patterned semiconductor wafer. The transfer material is deformable and curable under suitable ambient conditions. The transfer material may be a thermoplastic material or a material which is deformable as desired after application on a substrate and cures in one case by means of irradiation with photons having a suitable wavelength or alternatively heating. The transfer material may be configured in such a way that the imprint produced is the same size as or alternatively of smaller size than the surface profile. The imprint produced is subsequently measured by known methods.

Abstract: The present invention provides a method for the characterization of a depth structure in a substrate at a surface of the substrate, in which a cutout is produced at the surface of the substrate between an imaging device and the depth structure, the cutout being spaced apart from the depth structure. A layer of the substrate, which incipiently cuts the depth structure and the cutout, is removed by means of an ion beam in order to obtain a cut area, the layer and the normal to the area of the surface of the substrate assuming an acute angle that is greater than zero. The cut area is imaged by means of the imaging device in order to characterize the depth structure.